Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10
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2002/95/EC)
MA3X786D
MA786WA)
MA3X786E
MA786WK)
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MA3X786
Abstract: MA3X786D MA3X786E MA786 MA786WA MA786WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10
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2002/95/EC)
MA3X786D
MA786WA)
MA3X786E
MA786WK)
MA3X786
MA786)
MA3X786
MA3X786D
MA3X786E
MA786
MA786WA
MA786WK
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X786D, MA3X786E (MA786WA, MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5° 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package
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MA3X786D,
MA3X786E
MA786WA,
MA786WK)
MA3X786
MA786)
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X786D, MA3X786E (MA786WA, MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5° 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package
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MA3X786D,
MA3X786E
MA786WA,
MA786WK)
MA3X786
MA786)
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MA3X786
Abstract: MA3X786D MA3X786E MA786 MA786WA MA786WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10
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2002/95/EC)
MA3X786D
MA786WA)
MA3X786E
MA786WK)
MA3X786
MA786)
MA3X786
MA3X786D
MA3X786E
MA786
MA786WA
MA786WK
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MA3X786
Abstract: MA3X786D MA3X786E MA786 MA786WA MA786WK
Text: Schottky Barrier Diodes SBD MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5˚ 2 1 (0.95) (0.95) 1.9±0.1 (0.65)
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MA3X786D
MA786WA)
MA3X786E
MA786WK)
MA3X786
MA786)
MA3X786
MA3X786D
MA3X786E
MA786
MA786WA
MA786WK
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10
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2002/95/EC)
MA3X786D
MA786WA)
MA3X786E
MA786WK)
MA3X786
MA786)
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MA3X786E
Abstract: MA786WK SC-59A
Text: Schottky Barrier Diodes SBD MA3X786E (MA786WK) Silicon epitaxial planar type Unit : mm 2.8 Repetitive peak reverse voltage Peak forward current Single Average forward current Single VR 30 V VRRM 30 V IFM 300 mA Double*2 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06
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MA3X786E
MA786WK)
O-236
SC-59A
MA3X786E
MA786WK
SC-59A
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MA3X786
Abstract: MA3X786D MA3X786E MA786 MA786WA MA786WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X786D (MA786WA), MA3X786E (MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10
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2002/95/EC)
MA3X786D
MA786WA)
MA3X786E
MA786WK)
MA3X786
MA786)
MA3X786
MA3X786D
MA3X786E
MA786
MA786WA
MA786WK
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MA3X786
Abstract: MA3X786D MA3X786E MA786 MA786WA MA786WK
Text: Schottky Barrier Diodes SBD MA3X786D, MA3X786E (MA786WA, MA786WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5˚ 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package
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MA3X786D,
MA3X786E
MA786WA,
MA786WK)
MA3X786
MA786)
MA3X786
MA3X786D
MA3X786E
MA786
MA786WA
MA786WK
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Untitled
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA786WK Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 IF(AV)=100mA rectification possible ● Fast reverse recovery time trr, optimum for high-frequency rectifica-
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2SK1606
MA786WK
MA786
100mA
100mA
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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