Untitled
Abstract: No abstract text available
Text: GaAs IRED a PHOTO -TRIAC TLP3041,3042,3043 T E N T A T I V E DATA OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3041, TLP3042 and TLP3043 consist of a zero voltage crossing turn-on photo-triac optically
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TLP3041
TLP3041,
TLP3042
TLP3043
TLP3041)
TLP3042)
TLP3043)
100mA
5000Vrms
IEC380/VDE0806
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PDF
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TLP338
Abstract: No abstract text available
Text: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP337
TLP338
150mA.
150mA
5000Vrms
E67349
TLP338
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TLP639
Abstract: TLP639-F TLP639F VDE-0110
Text: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,
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TLP639F
TLP639F
TLP639.
5000Vrms
500Vac
883/VDE0883/6
804/VDE0804/1
IEC65/VDE0860/8
IEC380/VDE0806/8
IEC435/VDE0805/Draft
TLP639
TLP639-F
VDE-0110
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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PDF
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TIBPSG507AC
Abstract: No abstract text available
Text: TIBPSG507AC 13 x 80 x 8 PROGRAMMABLE SEQUENCE GENERATOR I SRPS002D - D3029. MAY 1 9 8 7 -R E V IS E D NO VEM BER 1995 • JT O R 58-MHz Max Clock Rate N T P A C K A G E T O P V IE W • | • • • • Ideal for Waveform Generation and High-Performance State Machine
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TIBPSG507AC
58-MHz
SRPS002D
D3029.
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PDF
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RJ635
Abstract: No abstract text available
Text: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP741J
150mA
UL1577,
E67349
BS415
BS7002
EN60950)
4000Vrms
TLP741J
VDE0884
RJ635
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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PDF
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TLP634
Abstract: 037g
Text: TLP633,634 GaAs IRED a PHOTO-TRANSISTOR TLP633 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. Unit in mm The TOSHIBA TLP633 and TLP634 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
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TLP633
TLP633)
TLP634
UL1577,
E67349
BS415
BS7002
EN60950)
037g
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PDF
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Untitled
Abstract: No abstract text available
Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)
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TPC8001
g--10
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74LVC00 QUADRUPLE 2-INPUT POSITIVE-NAND GATE SCAS279B-JANUARY 1993 - REVISED JULY 1995 I • EP/C Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MII-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74LVC00
SCAS279B-JANUARY
MII-STD-883C,
JESD-17
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PDF
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TLP3009
Abstract: tlp300
Text: TLP3009,3010,3011,3012 G aA s IRED a P H O TO -T R IA C TENTATIVE DATA OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3009, TLP3010, TLP3011 and TLP3012 consist of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic
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TLP3009
TLP3009,
TLP3010,
TLP3011
TLP3012
TLP3009)
TLP3010)
TLP3011)
TLP3012)
100mA
tlp300
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)
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TPC8001
15mfi
10//A
20kfl)
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PDF
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TSS3G4
Abstract: s3 2a relay board
Text: TSS3 G, J 45S TSS3(G,J)47S SOLID STATE AC RELAY O P T IC A LL Y IS O L A T E D , ZERO VOLTAGE TURN-ON, Unit in mm ZERO CURRENT TU R N -O FF, NORMALLY OPEN S S R . 47 MAX 15MAX COMPUTER P E R IP H E R A L S TYPE MARK MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEM S
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15MAX
TSS3G45S
TSS3G4
s3 2a relay board
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74LVC157 QUADRUPLE 2-LINE TO 1-UNE DATA SELECTOR/MULTIPLEXER SCAS292B-JANUARY 19 9 3 - REVISED JULY 1995 I • EPIC Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model
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SN74LVC157
SCAS292B-JANUARY
MIL-STD-883C,
JESD-17
7S266
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74LVCU04 HEX INVERTER SCAS282B - JANUARY 1993 - REVISED JULY 1995 D, DB, OR PW PACKAGE TOP VIEW • EP/C (Enhanced-Performance Implanted CMOS) Submicron Process I • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model
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SN74LVCU04
SCAS282B
MIL-STD-883C,
JESD-17
10robe
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O
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TPC8302
--20V)
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PDF
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10LZ
Abstract: IR 732 H
Text: TLP731,732 GaAs IRED S PHOTO-TRANSISTOR OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor o ptically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP731
TLP732
E67349
EN60950)
BS7002
TLP732
10LZ
IR 732 H
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PDF
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jeida dram 88 pin
Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
Text: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba
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88-pin
60-pin
jeida dram 88 pin
88pins
toshiba dram
jeida dram card 5v
88 pins dram card
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74ALVC125 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCES110D – JULY 1997 – REVISED DECEMBER 1998 D D D D EPIC Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVC125
SCES110D
MIL-STD-883,
SN74ALVC125D
SN74ALVC125DGVR
SN74ALVC125DR
SN74ALVC125NSR
SN74ALVC125PWR
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PDF
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Y446
Abstract: Y443 y441 POP-12 B1 Y447 Y442
Text: POP-12 Device OC-12 SONET/SDH Path Overhead Processor, Retimer, and Cross Connect TXC-06603 DATA SHEET PRODUCT PREVIEW DESCRIPTION • Path overhead POH processing for up to 12 x STS-1 SPEs or 4 x VC-4/STS-3c SPEs • 4 Tx and 4 Rx Pointer Tracking State Machines
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Original
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POP-12TM
OC-12
TXC-06603
TXC-06603-MB
Y446
Y443
y441
POP-12
B1 Y447
Y442
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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Original
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SN74ALVC14
SCES107E
MIL-STD-883,
SCEA005
SN74ALVC16835
PC100
SCEA007
SCAA029,
SZZU001B,
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PDF
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Untitled
Abstract: No abstract text available
Text: TLP731,TLP732 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP731,TLP732 Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP731 and TLP732 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a
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Original
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TLP731
TLP732
TLP732
UL1577,
E67349
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PDF
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58628-1
Abstract: No abstract text available
Text: General Information Kit Part Number: 7-2110838-2 Description: Ultra-Fast Fully Insulated FASTON Receptacles and Tabs Kit Application: Appliance Industries, Commercial and Building Equipment, HVAC Systems, Industrial Controls, Industrial Machines, Instrumentation and Controls, Lighting Applications, Medical Equipment, Motors, Security, Test Equipment
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Original
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UL94V-2
58628-1
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PDF
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marking ha02
Abstract: SN74AHC02-EP
Text: SN54AHC02, SN74AHC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATES SCLS254K− DECEMBER 1995 − REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC D Latch-Up Performance Exceeds 250 mA Per D ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model A114-A − 200-V Machine Model (A115-A)
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Original
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SN54AHC02,
SN74AHC02
SCLS254K-
SN54AHC02
SN74AHC02
000-V
A114-A)
A115-A)
marking ha02
SN74AHC02-EP
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PDF
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