Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 29.01.2009 512MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Marking -50 -60 -75 1 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks
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512MB
200Pin
256MB
D-12681
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FPLR cable
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5100UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 14 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every
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5100UE
1-800-Belden1
19x27
73/23/EEC)
93/68/EEC.
FPLR cable
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5000UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 12 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every
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5000UE
1-800-Belden1
19x25
73/23/EEC)
93/68/EEC.
566-5000UE-500-08
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UL-1666
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5000UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 12 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every
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5000UE
1-800-Belden1
19x25
73/23/EEC)
93/68/EEC.
UL-1666
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JESD97
Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
Text: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD
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ABB105DHHN
JESD97
ABB40DHHD
ABB92DHRN-S329
JESD97
EBA06DRTN-S23
ABC60DRTN-S99
ANB10DHRN
EZM24DRYH
AMM12DRZH
EZM24DSEH
EZC12DREI
BF64ABT
emc10drmh
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
54-ball
90-ball
IDD2/IDD71
09005aef8511d87c
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef8459c827)
09005aef8511d87c
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MT48LCM32B2
Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
Text: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard
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MT48LC2M32B2
PC100-compliant
4096-cycle,
09005aef811ce1fe)
09005aef84d5580d
MT48LCM32B2
MT48LC2M3B2b5
MT48LCM32B2P
MT48LCM32
Micron Technology automotive
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Untitled
Abstract: No abstract text available
Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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256Mb:
MT48H16M16LF
MT48H8M32LF
09005aef834c13d2
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A100S
Abstract: MT48H32M32
Text: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4
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MT48H32M32LF/LG
09005aef8404b23d
A100S
MT48H32M32
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MT48H4M32
Abstract: MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound
Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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128Mb:
MT48H8M16LF
MT48H4M32LF
54-ball
90-ball
09005aef832ff1ea
MT48H4M32
MT48H4M32LF
8M16
MT48H8M16LF
4M32
Compound
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256Mb
Abstract: MT48H16M16LF MT48H8M32LF 48H16M16
Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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256Mb:
MT48H16M16LF
MT48H8M32LF
54-ball
90-ball
09005aef834c13d2
256Mb
MT48H16M16LF
MT48H8M32LF
48H16M16
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MT48H16M16LF
Abstract: MT48H8M32LF
Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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PDF
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256Mb:
MT48H16M16LF
MT48H8M32LF
54-ball
90-ball
09005aef834c13d2
MT48H16M16LF
MT48H8M32LF
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E5 MARKING
Abstract: No abstract text available
Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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PDF
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256Mb:
MT48H16M16LF
MT48H8M32LF
09005aef834c13d2
E5 MARKING
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Untitled
Abstract: No abstract text available
Text: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free
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MT48LC2M32B2
86-pin
90-ball
PC100-compliant
09005aef811ce1fe
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Untitled
Abstract: No abstract text available
Text: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free
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MT48LC2M32B2
PC100-compliant
4096-cycle
09005aef811ce1fe
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MT48LCM32B2P
Abstract: MT48LCM32B2 x32s
Text: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free
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MT48LC2M32B2
PC100-compliant
4096-cycle,
09005aef811ce1fe
MT48LCM32B2P
MT48LCM32B2
x32s
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Untitled
Abstract: No abstract text available
Text: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4 banks
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MT48H32M32LF/LG
09005aef8404b23d
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MT48LC2M3B2b5
Abstract: MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS
Text: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free
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MT48LC2M32B2
PC100-compliant
4096-cycle
09005aef811ce1fe
MT48LC2M3B2b5
MT48LCM32B2
MT48LCM32B2P
MT48LC2M3B2
MT48LCM32
SMD MARKING code tac
63 ball fbga thermal resistance micron
MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS
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Untitled
Abstract: No abstract text available
Text: MT8D88C132 S , MT16D88C232(S) 4MB, 8MB DRAM CARDS MICRON I TECHNOLOGY. INC. DRAM CARD 4,8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access -6
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PDF
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MT8D88C132
MT16D88C232
110ns
130ns
MT8D68C132
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micron DRAM
Abstract: No abstract text available
Text: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access
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MT8D88C132H
MT16D88C232H
micron DRAM
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MICRON POWER RESISTOR 24W
Abstract: No abstract text available
Text: ADVANCE MICRON ft M T24D T J472(S 4 MEG x 72 DRAM MODULE SElMCONOUCTQft MC 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Components SOJ TSOP D DT • Packages
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PDF
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168-pin,
000mW
048-cycle
048cyde
128ms
DE-26)
MT240ffl472
MT24D
P01-P08
MICRON POWER RESISTOR 24W
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Untitled
Abstract: No abstract text available
Text: 1 PRELIMINARY M IC R O N • 8 MEG X StMlCOMCUCTOR. INC MT16D832 32,16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG X16 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 Packages Leadless 72-pin SIMM Leadless 7 2 -pin SIMM gold
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OCR Scan
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PDF
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MT16D832
72-pin
MT16D832G-6
MT16D832is
T160832
Ot994.
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSMT 000635^ 3T4 ■ URN PRELIMINARY piir~nnrr mh2D88C436 4 MEG x 36, 8 MEG x 18 IC DRAM CARD IC DRAM CARD 16 MEGABYTES 4 MEG x 36, 8 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing
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OCR Scan
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PDF
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88-Pin
MT12D88C436
16-megabyte
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