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    MARKING CODE 38 SMD TRANSISTOR Search Results

    MARKING CODE 38 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    MARKING CODE 38 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    3225 K30

    Abstract: K30 varistor VARISTOr MZ smd code 601 ZV30K0603 keko st smd IC marking code
    Text: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: [email protected] • ISO 9002 / QS 9000 Registered


    Original     		PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING PDF

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMV28UN O-236AB) PDF

    3N0625

    Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
    Text: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9


    Original     		IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 IPP25N06S3-25 3N0625 BIPP25N06S3-25, 3N0625 INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon PDF

    K802

    Abstract: varistor ST
    Text: Multilayer Technology Varistor Plus ZV Series Low Voltage Leaded Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: [email protected] • ISO 9002 / QS 9000 Registered


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PMV33UPE O-236AB) PDF

    05N03LA

    Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av
    Text: OptiMOS 2 Power-Transistor IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av PDF

    marking code br 39 SMD

    Abstract: smd marking code 321 05n03la
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA marking code br 39 SMD smd marking code 321 05n03la PDF

    05N03LA

    Abstract: IPU05N03LA p 181 V
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA 05N03LA p 181 V PDF

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06 PDF

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06 PDF

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 PDF

    09n03lb

    Abstract: PG-TO252-3-23
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23 PDF

    2n04h4

    Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
    Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18165 2N04H4 2n04h4 SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 PDF

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf PDF

    12n03lb

    Abstract: 12n03l d2422 12n03
    Text: OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level


    Original     		IPD12N03LB IPU12N03LB IPS12N03LB IPF12N03LB PG-TO252-3-11 12n03lb 12n03l d2422 12n03 PDF

    06N03LB

    Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263
    Text: OptiMOS 2 Power-Transistor IPD06N03LB G IPS06N03LB G IPU06N03LB G IPF06N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD06N03LB IPU06N03LB IPS06N03LB IPF06N03LB PG-TO252-3-11 06N03LB Q67042-S4263 PDF

    2n0612

    Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
    Text: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 PG-TO220-3-1 SP0002-18173 2N0612 2n0612 smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 PDF

    05N03LA

    Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l P-TO252-3-11 PDF

    05N03LA

    Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 fet to251 marking CODE R SMD DIODE P-TO252-3-11 05N03L PDF

    ZTA 4.0 MG

    Abstract: No abstract text available
    Text: TOKEN CERAMIC RESONATORS MHz/KHz Type Ceramic Resonators Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PC1401C LA7620 TA7777P LDA3586N LA7650 TA8654AN AN5302 ZTB912F ZTB912F101 ZTB912F104 ZTA 4.0 MG PDF