H12E
Abstract: h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e
Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906
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Original
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Q68000-A4417
OT-23
H12E
h11E
IC 720
3906
transistor 3906
transistor pnp 3906
3906 SOT
h22e
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PDF
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3V02
Abstract: No abstract text available
Text: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code
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Original
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O-236AB*
BSS123
O-236AB:
BSS123
OT-23.
3V02
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PDF
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SOT-23 marking 717
Abstract: SAP SOT23 sot-23 MARKING CODE 718
Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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Original
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BSS123
O-236AB:
O-236AB*
OT-23.
SOT-23 marking 717
SAP SOT23
sot-23 MARKING CODE 718
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PDF
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Si2303ADS
Abstract: Si2303DS
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2303ADS
O-236
OT-23)
Si2303DS
Conduct25
S-20617--Rev.
29-Apr-02
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PDF
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si2301ads
Abstract: No abstract text available
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2301ADS
O-236
OT-23)
Si2301DS
08-Apr-05
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PDF
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marking code vishay SILICONIX sot-23
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
08-Apr-05
marking code vishay SILICONIX sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2303ADS
O-236
OT-23)
Si2303DS
S-20213â
01-Apr-02
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2301ADS
O-236
OT-23)
Si2301DS
S-20221â
01-Apr-02
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PDF
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si2301
Abstract: Si2301ADS SI2301ADS SI2301DS SI2301DS 71-835 1a marking
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2301ADS
O-236
OT-23)
Si2301DS
18-Jul-08
si2301
SI2301ADS SI2301DS
71-835
1a marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2302ADS
O-236
OT-23)
Si2302DS
S-20171--Rev.
18-Mar-02
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PDF
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SI2301ADS SI2301DS
Abstract: 71-835 SI2301DS Si2301ADS tjm sot23 1A marking 1A MARKING CODE
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2301ADS
O-236
OT-23)
Si2301DS
S-20617--Rev.
29-Apr-02
SI2301ADS SI2301DS
71-835
tjm sot23
1A marking
1A MARKING CODE
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PDF
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Si2303ADS
Abstract: Si2303DS
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2303ADS
O-236
OT-23)
Si2303DS
18-Jul-08
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PDF
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Si2302DS 2A
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
S-32044--Rev.
13-Oct-03
Si2302DS 2A
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PDF
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si2302ds
Abstract: Si2302ADS Si2302DS 2A
Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2302ADS
O-236
OT-23)
Si2302DS
S-20617--Rev.
29-Apr-02
Si2302DS 2A
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2303ADS
O-236
OT-23)
Si2303DS
08-Apr-05
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PDF
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E201431
Abstract: LRD190 LRD190S LRD260 LRD260S Lrd3
Text: P OL YFUSE R ESETT ABLE FUSES OLYFUSE ESETTABLE LRD / No. 718 WICKMANN Strap TType ype V/20V ype, 15 15V Specifications Approvals Packaging cULus Recognized: File No. E201431 TÜV: File No. 9956421 00: Bulk/small pack Qty.: see table below 01: Bulk/standard (Qty.: see table below)
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Original
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5V/20V
E201431
E201431
LRD190
LRD190S
LRD260
LRD260S
Lrd3
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PDF
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PG2225L1X7R475MAT200
Abstract: PH 48 marking code
Text: UNION TECHNOLOGY CORP. DRAWN BY : 718 MONTEREY PASS RD Minh H. DATE: PART NUMBER 4/18/2012 PG2225L1X7R475MAT200 MONTEREY PARK, CA 91754 MFG. APPROVAL ENGINEERING APPROVAL Q.A. APPROVAL TEL: 323-266-6603 Lauriano V. Jacob Y. Gary K. CUSTOMER REV. COMP. CODE
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Original
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PG2225L1X7R475MAT200
PG2225L1X7R475MAT200
475MA
100Vdc
PF-5281-29-510
PH 48 marking code
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PDF
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PS5550J1X7R455MA300
Abstract: No abstract text available
Text: UNION TECHNOLOGY CORP. DRAWN BY : 718 MONTEREY PASS RD Minh H. DATE: PART NUMBER 4/18/2012 PS5550J1X7R455MA300 MONTEREY PARK, CA 91754 MFG. APPROVAL ENGINEERING APPROVAL Q.A. APPROVAL TEL: 323-266-6603 Lauriano V. Jacob Y. Gary K. CUSTOMER REV. COMP. CODE
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Original
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PS5550J1X7R455MA300
455MA
PF-5281-29-510
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PDF
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RW2020X7R152MA200
Abstract: No abstract text available
Text: UNION TECHNOLOGY CORP. DRAWN BY : 718 MONTEREY PASS RD MINH H. DATE: PART NUMBER 4/18/2012 RW2020X7R152MA200 MONTEREY PARK, CA 91754 MFG. APPROVAL ENGR. APPROVAL Q.A. APPROVAL TEL: 323-266-6603 LAURIANO V. JACOB Y. GARY K. CUSTOMER REV. COMP. CODE CONFIG.
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Original
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RW2020X7R152MA200
RW2020X7R152MA200
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PDF
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transistor bc 577
Abstract: transistor bc 103
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
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OCR Scan
|
Q62702-2372
OT-363
flE35bDS
BC847S
EHP00365
fl235b05
transistor bc 577
transistor bc 103
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PDF
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marking code 718 sot363
Abstract: No abstract text available
Text: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration
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OCR Scan
|
47kfl)
OT-363
marking code 718 sot363
|
PDF
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Q62702-S506
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for
|
OCR Scan
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Q62702-S506
BSS87
Q62702-S506
|
PDF
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bss123 marking sa
Abstract: No abstract text available
Text: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code
|
OCR Scan
|
BSS123
O-236AB*
O-236AB:
bss123 marking sa
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code
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OCR Scan
|
BSS123
O-236AB:
O-236AB*
|
PDF
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