Amplifier Micro-X "marking code" D
Abstract: MMIC Amplifier Micro-X marking D micro-X Package MARKING CODE C Amplifier Micro-X c5 marking code marking d "micro x" CGY41 MMIC marking CODE c4 Micro-X marking D d marking "Micro-X"
Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz
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CGY41
QS9000
Amplifier Micro-X "marking code" D
MMIC Amplifier Micro-X marking D
micro-X Package MARKING CODE C
Amplifier Micro-X
c5 marking code
marking d "micro x"
CGY41
MMIC marking CODE c4
Micro-X marking D
d marking "Micro-X"
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Amplifier Micro-X "marking code" D
Abstract: MARKING CODE l3 monolithic amplifier Amplifier Micro-X CGY41 MMIC Amplifier Micro-X marking 4 pin MMIC marking CODE c4 micro-X Package MARKING CODE C CGY41 H S-Band Power Amplifier intercept point MMIC Amplifier Micro-X marking g
Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz
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CGY41
QS9000
Amplifier Micro-X "marking code" D
MARKING CODE l3 monolithic amplifier
Amplifier Micro-X
CGY41
MMIC Amplifier Micro-X marking 4 pin
MMIC marking CODE c4
micro-X Package MARKING CODE C
CGY41 H
S-Band Power Amplifier intercept point
MMIC Amplifier Micro-X marking g
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Untitled
Abstract: No abstract text available
Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor Single-stage monolithic microwave IC MMIC-amplifier Application range: 100 MHz to 3 GHz 4 3 1 2 Gain: 9.5 dB typ. @ 1.8 GHz Low noise figure: 2.7 dB typ. @ 1.8 GHz
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CGY41
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Amplifier Micro-X "marking code" D
Abstract: MMIC Amplifier Micro-X marking 11 MMIC marking CODE c4 Micro-X Marking D GaAs Amplifier Micro-X
Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor Single-stage monolithic microwave IC MMIC-amplifier Application range: 100 MHz to 3 GHz 4 3 1 2 Gain: 9.5 dB typ. @ 1.8 GHz Low noise figure: 2.7 dB typ. @ 1.8 GHz
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CGY41
CGY41
Amplifier Micro-X "marking code" D
MMIC Amplifier Micro-X marking 11
MMIC marking CODE c4
Micro-X Marking D
GaAs Amplifier Micro-X
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diode MARKING CODE 917
Abstract: 1SV70 BIC703M L1103 21l4 sot143rmod DSA003645
Text: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703M
ADE-208-984D
200pF,
OT-143Rmod)
BIC703M
diode MARKING CODE 917
1SV70
L1103
21l4
sot143rmod
DSA003645
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diode MARKING CODE 917
Abstract: 1SV70 BIC703C DSA003645
Text: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703C
ADE-208-985D
200pF,
OT-343mod)
BIC703C
diode MARKING CODE 917
1SV70
DSA003645
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Hitachi DSA00174
Abstract: No abstract text available
Text: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703M
ADE-208-984C
200pF,
OT-143mod)
BIC703M
Hitachi DSA00174
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Hitachi DSA00174
Abstract: No abstract text available
Text: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703C
ADE-208-985C
200pF,
OT-343mod)
BIC703C
Hitachi DSA00174
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BIC702M
Abstract: 1SV70 air capacitor L1103 DSA003644
Text: BIC702M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-813D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC702M
ADE-208-813D
200pF,
OT-143Rmod)
BIC702M
1SV70
air capacitor
L1103
DSA003644
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diode MARKING CODE 917
Abstract: 1SV70 BIC702C DSA003644
Text: BIC702C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-814D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC702C
ADE-208-814D
200pF,
OT-343mod)
BIC702C
diode MARKING CODE 917
1SV70
DSA003644
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Untitled
Abstract: No abstract text available
Text: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9040
16-pin
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Untitled
Abstract: No abstract text available
Text: TQP3M9039 500−1500 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9039
16-pin
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MARKING CODE 106 QFN
Abstract: 04023J0R5BBSTR 3M9040
Text: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9040
16-pin
MARKING CODE 106 QFN
04023J0R5BBSTR
3M9040
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3M9039
Abstract: Thin Quad flat package mo-220 68 ECJ0EC1H470J
Text: TQP3M9039 700−1000 MHz Dual LNA Applications • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features
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TQP3M9039
16-pin
3M9039
Thin Quad flat package mo-220 68
ECJ0EC1H470J
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MJD6039T4
Abstract: MJD6039T4G MSD6100 1N5825 MJD6039 6039G
Text: MJD6039 Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves
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MJD6039
MJD6039/D
MJD6039T4
MJD6039T4G
MSD6100
1N5825
MJD6039
6039G
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J128G
Abstract: MARKING CODE l3 monolithic amplifier
Text: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
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MJD128T4G,
NJVMJD128T4G
MJD128/D
J128G
MARKING CODE l3 monolithic amplifier
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Untitled
Abstract: No abstract text available
Text: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features
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MJD6039,
NJVMJD6039T4G
AEC-Q101
MJD6039/D
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J128G
Abstract: transistor J128 MJD128T4G 1N5825 J128 MSD6100 d marking code dpak transistor
Text: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
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MJD128T4G
MJD128/D
J128G
transistor J128
MJD128T4G
1N5825
J128
MSD6100
d marking code dpak transistor
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6039G
Abstract: 1N5825 MJD6039 MJD6039T4 MJD6039T4G MSD6100 j603
Text: MJD6039 Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves
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MJD6039
MJD6039/D
6039G
1N5825
MJD6039
MJD6039T4
MJD6039T4G
MSD6100
j603
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Untitled
Abstract: No abstract text available
Text: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
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MJD128T4G,
NJVMJD128T4G
MJD128/D
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MJD128T4G
Abstract: J128G
Text: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
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MJD128T4G
MJD128/D
MJD128T4G
J128G
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Untitled
Abstract: No abstract text available
Text: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features
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MJD6039,
NJVMJD6039T4G
MJD6039/D
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Untitled
Abstract: No abstract text available
Text: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features
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MJD6039,
NJVMJD6039T4G
MJD6039/D
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Untitled
Abstract: No abstract text available
Text: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
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MJD128T4G,
NJVMJD128T4G
MJD128/D
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