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    MARKING FM ST Search Results

    MARKING FM ST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING FM ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N60P

    Abstract: diode sod-123 marking code FN
    Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS


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    1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code FN PDF

    s9018 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING:J8


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    OT-23 S9018 OT-23 400MHz s9018 transistor PDF

    1N60P

    Abstract: diode sod-123 marking code 26
    Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS


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    1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code 26 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING:J8


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    OT-23 S9018 OT-23 400MHz PDF

    MMBT9018

    Abstract: No abstract text available
    Text: UTC MMBT9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER FEATURES 2 *High Current Gain Bandwidth Product 1 fT=1.1GHz Typ MARKING 3 18 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)


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    MMBT9018 OT-23 QW-R206-032 MMBT9018 PDF

    tokin 473 5.5v

    Abstract: 0,10f, 5,5v, nec tokin 0,047F 5.5v FM0H103ZF FM0H224ZF 5.5v 0.047f 25 fmr 160 FME0H473ZF FMR0V104ZF FM0V224ZF
    Text: 6.2 FM Series Dimensions 10.5±0.5 T±0.5 11.5±0.5 0.4±0.1 5±1 0.5±0.1 0.4±0.1 5±0.5 (Unit:mm) Markings Negative polarity identification NT MAX operating voltage Nominal capacitance 5.5V – 473 A1 + E E :FME type marking L :FML type marking


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    time24 9565SCAVOL12E tokin 473 5.5v 0,10f, 5,5v, nec tokin 0,047F 5.5v FM0H103ZF FM0H224ZF 5.5v 0.047f 25 fmr 160 FME0H473ZF FMR0V104ZF FM0V224ZF PDF

    S9018 SOT-23

    Abstract: s9018
    Text: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) — MARKING:J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 S9018 OT-23 400MHz S9018 SOT-23 s9018 PDF

    BF543

    Abstract: triode sot23
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


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    BF543 VPS05161 Jun-28-2001 EHT07033 EHT07034 BF543 triode sot23 PDF

    marking code 11s

    Abstract: MARKING CODE 21S BF543
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


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    BF543 VPS05161 marking code 11s MARKING CODE 21S BF543 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


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    BF543 VPS05161 PDF

    BF999

    Abstract: triode sot23
    Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S


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    BF999 VPS05161 BF999 triode sot23 PDF

    BF999

    Abstract: No abstract text available
    Text: BF999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package


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    BF999 VPS05161 Nov-08-2002 BF99cal BF999 PDF

    BF999

    Abstract: triode sot23
    Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package


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    BF999 BF999 triode sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S


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    BF999 VPS05161 Apr-06-2005 PDF

    BF 22 W

    Abstract: No abstract text available
    Text: BF 543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration


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    VPS05161 OT-23 Dec-13-1999 EHT07033 EHT07034 BF 22 W PDF

    bb515

    Abstract: BF999
    Text: BF999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package


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    BF999 VPS05161 EHT07315 EHT07316 BB515 EHM07024 Jun-28-2001 bb515 BF999 PDF

    Q62702-F1372

    Abstract: No abstract text available
    Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    Q62702-F1372 OT-23 Q62702-F1372 PDF

    Bb515

    Abstract: bf999
    Text: BF 999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package


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    VPS05161 OT-23 EHT07315 EHT07316 BB515 EHM07024 Oct-26-1999 Bb515 bf999 PDF

    c22e

    Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
    Text: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code


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    Q62702-F944 OT-23 c22e Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450 PDF

    marking code IR10 diode

    Abstract: sod diode marking IR10 IR10 marking code SMD FM IC tuner diode SMD MARKING CODE 2M SDP520D MARKING CODE SMD IC KSD-C022-000 SMD MARKING CODE 2M
    Text: SDP520D Semiconductor Attenuator Diode Features ? SMD package : SOD-323 ? Low capacitance : C T =0.25pF Typ. ? Low series resistance : rs=7? (Typ.) ? VHF tuner band RF attenuator application ? AGC for FM tuner Ordering Information Type No. Marking Package Code


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    SDP520D OD-323 KSD-C022-000 100MHz marking code IR10 diode sod diode marking IR10 IR10 marking code SMD FM IC tuner diode SMD MARKING CODE 2M SDP520D MARKING CODE SMD IC KSD-C022-000 SMD MARKING CODE 2M PDF

    bf544

    Abstract: siemens fet to92 700M
    Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking


    OCR Scan
    Q62702-F944 OT-23 fl23SbDS 00bb7fi EHTG7054 PDF

    MARKING CODE 21S

    Abstract: 12NA50
    Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped


    OCR Scan
    Q62702-F1230 OT-23 MARKING CODE 21S 12NA50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    Q62702-F1372 OT-23 EHT07032 300MHz PDF