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    JRH Electronics MS27469Y21E11P

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    JRH Electronics MS27470Y21E24P

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    Amphenol Aerospace MS27470Y21E35P

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    JRH Electronics MS27470Y21E35P

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    JRH Electronics MS27470Y21E41S

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    Y21E Datasheets Context Search

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    Q62702-F979

    Abstract: BF599
    Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter


    Original     		PDF Q62702-F979 OT-23 Iy21e Q62702-F979 BF599

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    c22e

    Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
    Text: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code


    Original     		PDF Q62702-F944 OT-23 c22e Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A

    Katalog tesla tranzistor

    Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
    Text: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA


    OCR Scan     		PDF KFY18, KFY34, KFY46 KSY63 KSY82 Katalog tesla tranzistor KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517

    keramische Werke Hermsdorf

    Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
    Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß­ spannung U a k IVI Durchlaß­ strom Sperr­ spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr­ spannung jEä max. zuass. Durchlaß­ strom UKAma* IVI ^AKmax !mAl Bau­


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    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


    OCR Scan     		PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    C520D

    Abstract: rft lautsprecher vqe23 1PP75 Transistoren DDR MAA725 Radio Fernsehen Elektronik U706D Halbleiterinformation U311D
    Text: H a lb le ite rin fo rm a tio n e n - 74 M itte ilu n g aus dem VEB K o m b in a t H a lb le ite rw e rk F ra n k fu rt/O . Ing. W O L F R A M a FISCHER S o w jetische T ra n s is to re n 2 5 Germ anium -npn-Legierungstransistoren M n 35 bis M FI 38 A Teil 1


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    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    AFY12

    Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
    Text: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator


    OCR Scan     		PDF AFY12 Q60106 120mmho AFY12 OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor

    GS507

    Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
    Text: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek


    OCR Scan     		PDF R02N0V TT346B AF139) GS507 Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


    OCR Scan     		PDF C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P

    BF167

    Abstract: J BF167 TEWA 00156033 CE25 T072 t448
    Text: 12- 74/2 T R A N Z Y S T O R n-p-n & BF167 SWW 1156-213 Tranzystor krzem ow y planarny m alej m ocy w ielk iej czQ stotliwoici. Jest przeznaczony do stosow ania w stopniu regu lacyjnym w zm acniacza poSredniej cz^stotliwoSci w izji odbiorriik6w telew izyjn ych .


    OCR Scan     		PDF BF167 BF167 J BF167 TEWA 00156033 CE25 T072 t448

    BF173

    Abstract: TEWA tranzystor ne 1374 BF 173
    Text: TRANZYSTOR BF173 n-p-n SWW 1156-213 T ra n z y sto r k rz em o w y e p ip la n a rn y m aie j m ocy w ielk ie] czQstotliwosci. J e s t p rzezn aczo n y do sto so w a n ia w sto p n ia c h w y jsc io w ych w zm acn iaczy p o sre d n ie j cz^stotliw osci w iz ji odb io rn ik ó w tele w izy jn y ch .


    OCR Scan     		PDF BF173 BF173 TEWA tranzystor ne 1374 BF 173

    mh7493

    Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
    Text: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5


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    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    BF214

    Abstract: BF215 BF-215 J BF214 y12c GE c22c C22C C22E MAF100 y12e
    Text: TRANZYSTORY BF214 i BF215 19-74/2 n -p -n SWW 1156-213 T rarizy sto ry krzem o w e e p ip la n a rn e m ale j m ocy w ielk iej cz^stotliw osci. T ra n z y sto r BF214 je st przezn aczo n y do sto so w a n ia we w z m acn iaczach poSredniej cz^ stotliw osci o d b io rn ik o w r a diow ych AM oraz A M -F M i poSredniej cz^stotliw oSci


    OCR Scan     		PDF BF214 BF215 BF215 lY21el; Y126I; BF-215 J BF214 y12c GE c22c C22C C22E MAF100 y12e

    AF429

    Abstract: tranzystory AF428 AF426 AF430 AF427
    Text: T R A N Z Y S T O R Y p-n-p O AF426, AF427, AF428, AF429 i AF430 SWW 1156-213 T ranzystory germ anow e stopow o-dyfuzyjne m alej mocy w ielkiej cz^stotliwosci. T ranzystory AF426 i AF427 przeznaczone do stosow ania w e w zm acniaczach poSredniej cz^stotliwosci w tran zystorow ych odbiornikach AM/FM oraz w e w zm acnia­


    OCR Scan     		PDF AF426, AF427, AF428, AF429 AF430 AF426 AF427 AF430 tranzystory AF428

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF