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    MARKING R4S Search Results

    MARKING R4S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING R4S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F

    4GHZ TRANSISTOR

    Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F BFP640may

    marking re

    Abstract: BFP640 BGA420 T-25
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 OT343 marking re BFP640 BGA420 T-25

    bfp640

    Abstract: BFP640/F
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 VPS05605 OT343 bfp640 BFP640/F

    bfp640f

    Abstract: BFP420F
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F bfp640f BFP420F

    BFP640E6327

    Abstract: BFP640 noise figure bfp640e R4S BFP640
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640

    bfp640f

    Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F bfp640f bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz

    marking r4s

    Abstract: bfp640f BFP640F equivalent ccb 21
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F Mar-11-2004 marking r4s bfp640f BFP640F equivalent ccb 21

    marking r4s

    Abstract: R4S BFP640 BFP640 BFP640 noise figure
    Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications 1  Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 VPS05605 OT343 Jul-25-2002 marking r4s R4S BFP640 BFP640 BFP640 noise figure

    bfp640f

    Abstract: SPICE 2G6 transistor BF 298
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640F bfp640f SPICE 2G6 transistor BF 298

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz

    4ghz s parameters transistor

    Abstract: No abstract text available
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 BFP640E/L6327 E/L7764 L6327 L7764 VPS05605 Mar-01-2004 4ghz s parameters transistor

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    PDF BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s

    RAS 0510

    Abstract: LGA 775 PIN diagram TB 1275 N DATA SHEET PCR 606 J R4F24569VFQV 2n 1305 A18E ac servo motor encoder IRF 444 H lga 1156
    Text: REJ09B0467-0100 16 H8S/2456, H8S/2456R, H8S/2454 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2456 H8S/2456R H8S/2454 R4F2456 R4S2456 R4F2456R R4S2456R R4F2454 R4S2454 All information contained in this material, including products and product


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    PDF REJ09B0467-0100 H8S/2456, H8S/2456R, H8S/2454 16-Bit H8S/2400 H8S/2456 H8S/2456R H8S/2454 R4F2456 RAS 0510 LGA 775 PIN diagram TB 1275 N DATA SHEET PCR 606 J R4F24569VFQV 2n 1305 A18E ac servo motor encoder IRF 444 H lga 1156

    RAS 0510

    Abstract: PO 903 transistor 1270 A18E IRF P 914 D BU 508 AF LGA 775 PIN diagram ESE 1012 1117 3.3 BC 594
    Text: REJ09B0466-0100 16 H8S/2426, H8S/2426R, H8S/2424 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2426 H8S/2426R H8S/2424 R4F2426 R4S2426 R4F2426R R4S2426R R4F2424 R4S2424 All information contained in this material, including products and product


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    PDF REJ09B0466-0100 H8S/2426, H8S/2426R, H8S/2424 16-Bit H8S/2400 H8S/2426 H8S/2426R H8S/2424 R4F2426 RAS 0510 PO 903 transistor 1270 A18E IRF P 914 D BU 508 AF LGA 775 PIN diagram ESE 1012 1117 3.3 BC 594

    3A5 tube

    Abstract: marking code p60 SMD MARKING 3AB SMD IC 3f5 4f4 marking
    Text: INTEGRATED CIRCUITS XA-S3 XA 16-bit microcontroller 32K/1K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage 2.7 V–5.5 V , I2C, 2 UARTs, 16MB address range Preliminary specification Supersedes data of 1999 Oct 29 Philips Semiconductors 2000 Mar 09 Philips Semiconductors


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    PDF 16-bit 32K/1K timers/counters30KBA OT188 OT315 3A5 tube marking code p60 SMD MARKING 3AB SMD IC 3f5 4f4 marking

    Untitled

    Abstract: No abstract text available
    Text: STTH3R04 Ultrafast recovery diode Features • Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature A K DO-15 DO-201AD STTH3R04Q STTH3R04 Band indicates cathode side. Description The STTH3R04 series uses ST's new 400 V


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    PDF STTH3R04 DO-15 DO-201AD STTH3R04Q STTH3R04 STTH3R04U STTH3R04S

    3R4U

    Abstract: DO201AD JESD97 STTH3R04 STTH3R04Q STTH3R04S STTH3R04U smc 40
    Text: STTH3R04 Ultrafast recovery diode Features • Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature A K DO-15 DO-201AD STTH3R04Q STTH3R04 Band indicates cathode side. Description The STTH3R04 series uses ST's new 400 V


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    PDF STTH3R04 DO-15 DO-201AD STTH3R04Q STTH3R04 STTH3R04U STTH3R04S 3R4U DO201AD JESD97 STTH3R04Q STTH3R04S STTH3R04U smc 40

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    fsk modulator using 555

    Abstract: PLC modem plc modem using fsk X25 crc fsk modem MX 128 D MX919B MX919BDS MX919BDW MX919BLH
    Text: MX919B COMMUNICATION SEMICONDUCTORS DATA BULLETIN 4-Level FSK Modem Data Pump PRELIMINARY INFORMATION Features Applications • 4-Level Root Raised Cosine FSK Modulation • Wireless Data Terminals • Half Duplex, 4800 to 19.2kbps • Two Way Paging Systems


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    PDF MX919B fsk modulator using 555 PLC modem plc modem using fsk X25 crc fsk modem MX 128 D MX919B MX919BDS MX919BDW MX919BLH

    fsk modulator using 555

    Abstract: plc modem using fsk PLC modem 11R4S fsk modem wireless modem design of wireless data modem using fsk modulation MX929B MX929BDS MX929BDW
    Text: MX929B COMMUNICATION SEMICONDUCTORS DATA BULLETIN 4-Level FSK Modem Data Pump PRELIMINARY INFORMATION Features Applications x 4-Level Root Raised Cosine FSK Modulation x RD-LAP¥ ¥ Systems x Half Duplex, 4800 to 19.2kbps x RCR STD-47 Systems x Increase Channel Bit Rate/Hz


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    PDF MX929B STD-47 fsk modulator using 555 plc modem using fsk PLC modem 11R4S fsk modem wireless modem design of wireless data modem using fsk modulation MX929B MX929BDS MX929BDW

    tlr2u

    Abstract: asda HD4074408S 4074418H marking B5T DP-64S HD404418F HD404418H HD404418S HMCS400
    Text: HD404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM, I/O, four timer/counters, and two


    OCR Scan
    PDF HD404418 HMCS400 HD4074418 HD4074408 27256-compatible. tlr2u asda HD4074408S 4074418H marking B5T DP-64S HD404418F HD404418H HD404418S