SOT-23 Product Code bss123
Abstract: DSS SOT23 marking 9a sot-23
Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code
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OT-23
BSS123
OT-23:
SOT-23 Product Code bss123
DSS SOT23
marking 9a sot-23
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q2A4436RBG,
R1Q2A4418RBG
144-Mbit
R10DS0140EJ0100
R1Q2A4436RBG
304-word
36-bit
R1Q2A4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q3A4436RBG,
R1Q3A4418RBG
144-Mbit
R10DS0141EJ0100
R1Q3A4436RBG
304-word
36-bit
R1Q3A4418RBG
608-word
18-bit
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TRANSISTOR 2108A
Abstract: 2108a 2108a transistor equivalent of 2108A transistor ic 2108a common collector PNP TR 2108A 2108a marking
Text: Ordering number: EN4698 FP215 No.4698 PNP Epitaxial Planar Silicon Composite Transistors SA\YO High-Frequency Amp, Differential Amp Applications i F eatu re s • Composite type with 2 transistors contained in the PCP package currently in use, improving the
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EN4698
FP215
FP215
2SA1724,
TRANSISTOR 2108A
2108a
2108a transistor
equivalent of 2108A transistor
ic 2108a
common collector PNP
TR 2108A
2108a marking
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PDF
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2SD1624
Abstract: u 5601 2SB1124
Text: Ordering num ber: EN 2019A 2SB1124/2SD1624 NO.2019A SA VYÖ PN P/N PN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.
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2SB1124/2SD1624
2SB1124
250mm
35M-0
2SD1624
u 5601
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2SC3173
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V
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H707L,
2SC3173
201OA
1309B
IS-20MA
IS-313
IS-313A
2SC3173
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PDF
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3079-2
Abstract: No abstract text available
Text: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the
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22kfl
2SA1342,
3079-2
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PDF
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st zo 607
Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.
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EN5185
2SC5275
10dBtyp
st zo 607
ZO 607 MA
ZO 607 MA 135
zo 607
transistor zo 607
0124
Z0 607 MN
ZO 607 transistor
B/B/CQ 643
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PDF
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2sd444
Abstract: 2SD44 1SA16
Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product
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2SA1685,
2SC4443
2SA1685
2sd444
2SD44
1SA16
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2SA1420
Abstract: SC36 small signal transistor
Text: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).
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l682A
2SA1420/2SC3653
2SA1420
2034/2034A
SC-43
7tlt17D7b
SC36
small signal transistor
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PDF
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2SC4452
Abstract: QVC5 Q60H
Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
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G007101
2SC4452
-T-35-07
2SC4452-applied
QVC5
Q60H
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PDF
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2SD1627
Abstract: transistor DJ 30 at n430
Text: Ordering num be-:E N 2 0 1 6 A 2SD1627 NO.2016A I NPN Epitaxial Planar Silicon Transistor SA%YO Driver Applications II Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hpg^OOO . Wide ASO
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2SD1627
250mm
500mA
600mA
600lnA
0-15mA
5277KI/N255KI
2SD1627
transistor DJ 30 at
n430
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PDF
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transistor 495
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06971
GEX06630
transistor 495
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability
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2SD2176
250mm2
7149MO
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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847PN
Q62702-C2374
OT-363
Mav-12-1998
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bo 947
Abstract: BDP947C dp947
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B
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BDP948,
BDP950
BDP947
Q62702-D1335
Q62702-D1337
OT-223
OT-223
300ns;
bo 947
BDP947C
dp947
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PDF
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marking CA
Abstract: CE 472M
Text: Ordering number : EN 4 7 2 1 I SA IVO 2SA1866 No.4721 PNP Epitaxial Planar Silicon Transistor Muting Circuits, Driver Applcations Featu res • On-chip bias resistors R1 = 47kfi, R2 = 47kft . • Very small-sized package making 2SA1866-applied sets small and slim.
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2SA1866
47kfi,
47kft)
2SA1866-applied
62094MT
AX-9000
472M/2
marking CA
CE 472M
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PDF
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2sC 548 B
Abstract: 2SA520 2sc391
Text: O rd e rin g n u m b er : E N 2161A 1 No.2161A / SA%YO 2SA1520/2SC3914 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuits, inverter circuits, interface circuits, driver circuits Features
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2SA1520/2SC3914
500mA)
2SA1520
3317KI/D086TA
2sC 548 B
2SA520
2sc391
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PDF
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MARKING dk
Abstract: 2sd1628
Text: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.
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2SD1628
250mm
10lB2
5277KI/3045MW
250mm2*
MARKING dk
2sd1628
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PDF
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2sa15
Abstract: WY 549
Text: O rd e rin g n u m b e r: EN 2 1 6 6 iS A \Y O 2SA1521/2SC3915 No.2166 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features
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2SA1521/2SC3915
500mA)
2SA1521
2SA15
WY 549
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PDF
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2007A
Abstract: 2sc3649
Text: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs
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2SA1419/2SC3649
2SA1419
250inm2x0
250mmzx0
2007A
2sc3649
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PDF
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marking SA
Abstract: KTC4377
Text: KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics. 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta
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KTC4377
A/50mA
OT-89
10-Jul-07
250mm
OT-89
marking SA
KTC4377
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PDF
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Untitled
Abstract: No abstract text available
Text: STA3073F PNP Silicon Transistor Applications PIN Connection • Power amplifier application High current switching application Features : : High collector breakdown voltage VCEO=-120V Low collector saturation voltage VCE sat =-0.5V(Max.) SOT-89
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STA3073F
-120V
OT-89
KSD-T5B032-000
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r : EN 2 0 4 0 A J 2SB1122/2SD1622 SA\YO PN P/N PN Epitaxial Planar Silicon Transistors i Low-Frequency Power Amp Applications Applications . Voltage regulators relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET process
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2SB1122/2SD1622
2SB1122
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PDF
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