nxp Standard Marking
Abstract: No abstract text available
Text: R_10001 Guideline for the laser marking layout of WLCSP devices Rev. 01 — 10 February 2010 Report Document information Info Content Title R_10001 Short title 1 line R_10001 Subtitle Guideline for the laser marking layout of WLCSP devices Short subtitle (1 line) WLCSP marking guideline
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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ME-R1113Z-0310
Abstract: R1113Z Series R1113Z R1113Z201B
Text: POWER MANAGEMENT ICs MARK INFORMATIONS R1113Z SERIES MARK SPECIFICATION • WLCSP-4-P1 : F Fixed 1 1 • 2 3 2 , 3 : Lot Number Part Number vs. Marking Part Number Product Code Part Number 1 Product Code 1 R1113Z151B F R1113Z301B F R1113Z161B F R1113Z311B
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R1113Z
R1113Z151B
R1113Z301B
R1113Z161B
R1113Z311B
R1113Z171B
R1113Z321B
R1113Z181B
R1113Z331B
R1113Z191B
ME-R1113Z-0310
R1113Z Series
R1113Z201B
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Untitled
Abstract: No abstract text available
Text: MARK INFORMATION ME-R5326Z-070806 R5326Z SERIES MARK SPECIFICATION • WLCSP-6-P1 : H Fixed 1 1 • 2 3 2 , 3 : Lot Number Product Code vs. Marking (A part number is discriminable from a product code and a lot number) Part Number Product Code Part Number
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ME-R5326Z-070806
R5326Z
R5326Z001A
R5326Z001B
R5326Z002A
R5326Z002B
R5326Z003A
R5326Z003B
R5326Z004A
R5326Z004B
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ME-R5323Z-0505
Abstract: No abstract text available
Text: MARK INFORMATION ME-R5323Z-0505 R5323Z SERIES MARK SPECIFICATION • WLCSP-6-P1 : G Fixed 1 1 • 2 3 2 , 3 : Lot Number Product Code vs. Marking Part Number Product Code Part Number 1 Product Code Part Number 1 Product Code Part Number 1 Product Code 1
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ME-R5323Z-0505
R5323Z
R5323Z001A
R5323Z021A
R5323Z001B
R5323Z021B
R5323Z002A
R5323Z022A
R5323Z002B
R5323Z022B
ME-R5323Z-0505
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a 3101
Abstract: No abstract text available
Text: BJB Product Details Page 1 of 1 Home > Lampholders > Low Voltage Halogen Lampholders > GU5.3 25.105.3101 1/1 Part No. 25.105.3101.00 Color other 1/1 Package qty. 500 Wt. 8 Screw mount 12 mm centers T-Marking: 250 Connection: Cable PTFE, rear cable entry Housing: Housing ceramic
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Untitled
Abstract: No abstract text available
Text: CM1457 4-, 6-, 8-Channel EMI Filter Array with ESD Protection Description • Four, Six or Eight Channels of EMI Filtering • ±15 kV ESD Protection IEC 61000−4−2, Contact Discharge at • • • WLCSP15 CP SUFFIX CASE 567BR WLCSP10 CP SUFFIX CASE 567BJ
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CM1457
CM1457/D
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WLCSP66
Abstract: PI0297 EIA-481-C EIA 481-C WLCSP64 WLCSP underfill WLCSP stencil design comintec onyx32 smd code marking wlcsp 9
Text: PI0297 Package Information Description of WLCSP for microcontrollers and recommendations for use Introduction This document describes the WLCSP wafer level chip size package , and provides recommendation on how to use it. Only WLCSP for microcontrollers are described herein.
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PI0297
WLCSP66
PI0297
EIA-481-C
EIA 481-C
WLCSP64
WLCSP
underfill
WLCSP stencil design
comintec onyx32
smd code marking wlcsp 9
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WLCSP stencil design
Abstract: PI0297 JESD22-B101 wlcsp inspection WLCSP66 onyx EIA 763 st micro trace date code
Text: PI0297 Package Information Description of WLCSP for microcontrollers and recommendations for use Introduction This document describes the WLCSP wafer level chip size package , and provides recommendation on how to use it. Only WLCSP for microcontrollers are described herein.
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PI0297
WLCSP stencil design
JESD22-B101
wlcsp inspection
WLCSP66
onyx
EIA 763
st micro trace date code
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maxim CODE TOP MARKING
Abstract: Pb95Sn5 maxim TOP MARKING garrou wafer-level packaging has arrived Maxim ic date code ANALOG DEVICES ASSEMBLY DATE CODE philip IC marking Maxim date code DS2431 dALLAS MARKING CODE maxim assembly of code
Text: Maxim > App Notes > 1-Wire Devices General Engineering Topics Keywords: flip, chip, scale, wafer, level, package, packages, packaging, wlp, ucsp, fchip, wlcsp, pb free, rohs, topmark, bump, die Apr 18, 2007 APPLICATION NOTE 4002 Understanding Flip-Chip and Chip-Scale Package Technologies and
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DS2482-101:
DS2502:
DS2762:
com/an4002
AN4002,
APP4002,
Appnote4002,
maxim CODE TOP MARKING
Pb95Sn5
maxim TOP MARKING
garrou wafer-level packaging has arrived
Maxim ic date code
ANALOG DEVICES ASSEMBLY DATE CODE
philip IC marking
Maxim date code DS2431
dALLAS MARKING CODE
maxim assembly of code
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WECR64
Abstract: hokuriku
Text: Wide Terminal Type Chip Resistor Hokuriku Electric Industry Co.,Ltd 【Model Number】 WECR*/WLCR*/WCR* 【Features】 •Due to wide side terminal, high power handling was achieved. Compared to same size other type, 1～2 higher rank is possible） possible）
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WECR32
WLCR32
WCR32
WECR50
WLCR50
WCR50
WECR64
WLCR64
WCR64
hokuriku
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2388x
Abstract: WLCSP-26
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP26, 2.388x2.233 CASE 567CY−01 ISSUE O DATE 02 NOV 2010 SCALE 4:1 D PIN A1 REFERENCE 2X 0.10 C 2X 0.10 C ÈÈ ÈÈ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.
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WLCSP26,
388x2
567CY-01
567CY
2388x
WLCSP-26
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WLCSP35
Abstract: WLCSP-35 WLCSP
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP35, 3.63x2.68 CASE 567AG−01 ISSUE A SCALE 4:1 PIN A1 REFERENCE ÈÈ ÈÈ D A DATE 02 NOV 2010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL
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WLCSP35,
567AG-01
567AG
WLCSP35
WLCSP-35
WLCSP
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WLCSP-30
Abstract: WLCSP30
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP30, 2.233x2.388 CASE 567CT−01 ISSUE A DATE 16 NOV 2010 SCALE 4:1 D PIN A1 REFERENCE 2X 0.10 C 2X 0.10 C ÈÈ ÈÈ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.
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WLCSP30,
233x2
567CT-01
567CT
WLCSP-30
WLCSP30
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A96V
Abstract: No abstract text available
Text: DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RSS(ON) Package 24V 26mΩ @ VGS = 4.5V X1-WLB1818-4 IS TA = +25°C 6.0A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) with thin WLCSP packaging process
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DMN2023UCB4
X1-WLB1818-4
AEC-Q101
DS35829
A96V
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Untitled
Abstract: No abstract text available
Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mΩ Features General Description Max rDS on = 140 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,
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FDZ661PZ
FDZ661PZ
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Untitled
Abstract: No abstract text available
Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mΩ Features General Description ̈ Max rDS on = 140 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,
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FDZ661PZ
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Untitled
Abstract: No abstract text available
Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mΩ Features General Description Max rDS on = 134 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,
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FDZ663P
FDZ663P
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Untitled
Abstract: No abstract text available
Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mΩ Features General Description ̈ Max rDS on = 134 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,
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FDZ663P
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Untitled
Abstract: No abstract text available
Text: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the
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FDZ193P
FDZ193P
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Untitled
Abstract: No abstract text available
Text: FDZ191P P-Channel 1.5V Specified PowerTrenchTM WL-CSP MOSFET General Description Features Designed on Fairchild’s advanced 1.5V PowerTrench process with state of the art “low pitch” WLCSP packaging process, the FDZ191P minimizes both PCB space and RDS ON . This advanced WLCSP MOSFET
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FDZ191P
FDZ191P
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Untitled
Abstract: No abstract text available
Text: FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features General Description Max rDS on = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,
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FDZ371PZ
FDZ371PZ
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Untitled
Abstract: No abstract text available
Text: FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features General Description Max rDS on = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the
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FDZ197PZ
FDZ197PZ
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GPI048
Abstract: upd3 PD30111
Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C
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uPD30111
ns/20
GPI048
upd3
PD30111
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