Untitled
Abstract: No abstract text available
Text: MB811161622A 1/2 IL08 C-MOS 16 M (2,048,000 x 8)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 GND GND 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 PIN NO. I/O SIGNAL 26
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MB811161622A
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MDS-168P-P08
Abstract: 168PA MB811161622A mb811161622
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11101-2E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8501S064AC-100/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M × 16 BIT SDRAMs with SPD • DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM
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DS05-11101-2E
MB8501S064AC-100/-84/-67
168-pin,
MB8501S064AB
MB811161622A
168-pin
MB8501S0ponsible
F9703
MDS-168P-P08
168PA
mb811161622
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mb811161622c
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11120-1E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM 144-pin, 2 Clock, 1-bank, based on 1 M × 16 Bit SDRAMs with SPD, Low-power version
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DS05-11120-1E
0/-84/-67/-100L/-84L/-67L/-100S/-84S/-67S
144-pin,
MB8501S064CE
MB811161622C
144-pin
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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mb811161622c
Abstract: MB811161622
Text: July 1997 Revision 1.0 data sheet SOB1UL6414- 67/84/100 T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SOB1UL6414-(67/84/100)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB1UL6414-
144-pin,
MB811161622C-
1Mx16
100MHz)
84MHz)
15inaccuracies.
MP-SDRAMM-DS-20557-7/97
mb811161622c
MB811161622
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 64 BIT 0/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M x 16 BIT SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of four MB811161622A devices which organized as two banks of 1 M x 16 bits and a 2 K-bit
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168-pin,
MB8501S064AB
MB811161622A
168-pin
F9703
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 R/Ix 84 BIT OUS DYNAMIC RAM SO»DIMM M 1S06 / • v r * * . I*-"I q o / “ £ 4/-67M00L/-84L/-67L/-100SA84S/-67S 144-pin, 2 Clock, 1-bank, based on 1 M x 16 Bit SDRAMs with SPD, Low-power version I DESCRIPTION The Fujitsu MB8501S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory
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4/-67M00L/-84L/-67L/-100SA84S/-67S
144-pin,
MB8501S064CE
MB811161622C
144-pin
F9709
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MB8508S064AE-100L
Abstract: MB8508S064AE
Text: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ
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MB81117822A
MB81117422A
2Mx72
MB8502SQ72AG-1OQ
MB8502S07217822A
2Mx64
144Pin
MB81116822C
4Mx64
MB8508S064AE-100L
MB8508S064AE
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15j100
Abstract: No abstract text available
Text: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption
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B81116822C-84L
MB81116822C-67L
MB811171621
MB811171622A-100
512kx16
B811171622A-84
MB811171622A-67
MB811161622C-100L
MB811161622C-84L
MB811161622C-67L
15j100
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