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    MB85R256HPFTN Search Results

    MB85R256HPFTN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R256HPFTN Fujitsu Memory FRAM CMOS 256 K (32 K x 8) Bit Original PDF

    MB85R256HPFTN Datasheets Context Search

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    MB85R256HPF-G-BNDAE1

    Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-4Ea MB85R256H MB85R256H MB85R256HPF-G-BNDAE1 FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN

    MB85R256HPF

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-2E MB85R256H MB85R256H F0702 MB85R256HPF

    000read

    Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-1E MB85R256H MB85R256H F0606 000read MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN MB85R256HPFTN TCA 120