MBN600E45A Search Results

MBN600E45A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBN600E45A		Hitachi Semiconductor	TRANS IGBT MODULE N-CH 4500V 600A		Original	PDF

MBN600E45A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBN600E45A Abstract: 600A 500v igbt L130N Text: IGBT MODULE Spec.No.IGBT-SP-06005 R2 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	PDF	IGBT-SP-06005 MBN600E45A 000cycles) MBN600E45A 600A 500v igbt L130N
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-06005 R3 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.	Original	PDF	IGBT-SP-06005 MBN600E45A 000cycles)
MBN600E45A Abstract: 600A 500v igbt Text: Spec.No.IGBT-SP-06005R0 IGBT MODULE MBN600E45A Preliminary Specification. Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	PDF	IGBT-SP-06005R0 MBN600E45A 000cycles) PDE-N1200D33C-0 MBN600E45A 600A 500v igbt
Untitled Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.No.SR2-SP-06002 R4 P1 MDM600E45A OUTLINE DRAWING Unit in mm FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)	Original	PDF	SR2-SP-06002 MDM600E45A
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	PDF	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
MBN600E45A Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P1 MDM600E45A OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)	Original	PDF	NoSR2-SP-06002 MDM600E45A MBN600E45A
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	PDF	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12