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Power Integrations 1SP0335D2S1-MBN800H45E2-H Gate Drivers Gate Driver ONLY for Hitachi MBN800H45E2-H module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335D2S1-MBN800H45E2-H					1 $130.98 10 $130.98 100 $117.48 1000 $117.48 10000 $117.48	Get Quote
Power Integrations 1SP0335D2S1-MBN800H45E2 Gate Drivers ONLY for Hitachi MBN800H45E2 module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335D2S1-MBN800H45E2					1 $130.98 10 $130.98 100 $117.48 1000 $117.48 10000 $117.48	Get Quote
Power Integrations 1SP0335D2S1C-MBN800H45E2-H Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335D2S1C-MBN800H45E2-H					1 - 10 $205.59 100 $184.4 1000 $184.4 10000 $184.4	Get Quote
Power Integrations 1SP0335V2M1C-MBN800H45E2-H Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link, conformal coating
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335V2M1C-MBN800H45E2-H					1 - 10 $292.9 100 $283.89 1000 $283.89 10000 $283.89	Get Quote
Power Integrations 1SP0335S2M1C-MBN800H45E2-H Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with ST, conformal coating
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335S2M1C-MBN800H45E2-H					1 - 10 $363.85 100 $352.66 1000 $352.66 10000 $352.66	Get Quote

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MBN800H45E2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.	Original	IGBT-SP-10004 MBN800H45E2-H 000cycles)	PDF
Hitachi DSA00281 Abstract: MBN800 Text: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-10014 MBN800H45E2 000cycles) Hitachi DSA00281 MBN800	PDF
mbn800h45e2h Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-10004 MBN800H45E2-H 000cycles) mbn800h45e2h	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-10004 MBN800H45E2-H 000cycles)	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-10014 R1 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-10014 MBN800H45E2 000cycles)	PDF
Untitled Abstract: No abstract text available Text: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.	Original	SR2-SP-09001 MDM800H45E2 MDM800E45E2	PDF
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt	PDF
diode hitachi Abstract: LS190N 1000-1 POWER MODULE Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.	Original	SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE	PDF
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12	PDF
Untitled Abstract: No abstract text available Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.	Original	SR2-SP-10001 MDM800H45E2-H MDM800H45r	PDF
Untitled Abstract: No abstract text available Text: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.	Original	SR2-SP-10001 MDM800H45E2-H	PDF