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    MBN800H45E2H Price and Stock

    Power Integrations 1SP0335D2S1-MBN800H45E2-H

    Gate Drivers Gate Driver ONLY for Hitachi MBN800H45E2-H module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335D2S1-MBN800H45E2-H
    • 1 $130.98
    • 10 $130.98
    • 100 $117.48
    • 1000 $117.48
    • 10000 $117.48
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    Power Integrations 1SP0335D2S1C-MBN800H45E2-H

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335D2S1C-MBN800H45E2-H
    • 1 -
    • 10 $205.59
    • 100 $184.4
    • 1000 $184.4
    • 10000 $184.4
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    Power Integrations 1SP0335V2M1C-MBN800H45E2-H

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335V2M1C-MBN800H45E2-H
    • 1 -
    • 10 $292.9
    • 100 $283.89
    • 1000 $283.89
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    Power Integrations 1SP0335S2M1C-MBN800H45E2-H

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with ST, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335S2M1C-MBN800H45E2-H
    • 1 -
    • 10 $363.85
    • 100 $352.66
    • 1000 $352.66
    • 10000 $352.66
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    Power Integrations 1SP0335V2M1-MBN800H45E2-H

    Gate Drivers Gate Driver ONLY for Hitachi MBN800H45E2-H module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335V2M1-MBN800H45E2-H
    • 1 -
    • 10 $218.3
    • 100 $211.59
    • 1000 $211.59
    • 10000 $211.59
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    MBN800H45E2H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		IGBT-SP-10004 MBN800H45E2-H 000cycles) PDF

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt PDF

    diode hitachi

    Abstract: LS190N 1000-1 POWER MODULE
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.


    Original     		SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE PDF

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 PDF

    mbn800h45e2h

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		IGBT-SP-10004 MBN800H45E2-H 000cycles) mbn800h45e2h PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		IGBT-SP-10004 MBN800H45E2-H 000cycles) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original     		SR2-SP-10001 MDM800H45E2-H MDM800H45r PDF

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original     		SR2-SP-10001 MDM800H45E2-H PDF