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    onsemi MBR340RLG

    DIODE SCHOTTKY 40V 3A AXIAL
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    MBR340RLG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR340RLG On Semiconductor 3A 40V Schottky Rectifier Original PDF

    MBR340RLG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR340

    Abstract: MBR340G MBR340RL MBR340RLG
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG

    MBR340

    Abstract: MBR340G MBR340RL MBR340RLG
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340 MBR340G MBR340RL MBR340RLG

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340/D

    MBR340

    Abstract: MBR340G MBR340RL MBR340RLG
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG

    Untitled

    Abstract: No abstract text available
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340/D