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    ROHM Semiconductor MCH185A4R7CK

    CAP CER 4.7PF 50V C0G/NP0 0603
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    DigiKey MCH185A4R7CK Reel 4,000
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    Bristol Electronics MCH185A4R7CK 10,187
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    Quest Components MCH185A4R7CK 22,500
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    MCH185A4R7CK 5,755
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    MCH185A4R7CK 3,037
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    MCH185A4R7CK 474
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    Component Electronics, Inc MCH185A4R7CK 4,000
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    MCH185A4R7CK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH185A4R7CK ROHM Ceramic Capacitors, Capacitors, CAP CER 4.7PF 50V NP0 0603 Original PDF

    MCH185A4R7CK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B PDF

    MCH185A221JK

    Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
    Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits


    Original     		AN-079 SGA-8543Z dev2450 2440MHz EAN-104851 MCH185A221JK MCH185A390JK ML200C PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21 PDF

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS PDF

    rm73z1j000

    Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
    Text: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for


    Original     		HFA3524EVAL AN9809 HFA3524 rm73z1j000 MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK PDF

    2052-1215-00

    Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
    Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low


    Original     		AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093 PDF

    KXN1332A

    Abstract: ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer
    Text: Using The HFA3524AEVAL Board Sem iconductor A p p lic a tio n N o te S e p te m b e r 1998 A N 9 8 0 9 .1 Author: Milutin Culibrk Introduction The HFA3524A is a highly integrated Dual Frequency Synthesizer ideally P - R I S M ) j ì j ì suited for use in communications


    OCR Scan     		HFA3524AEVAL HFA3524A HFA3524, ConnectionsECU-V1H102KBV MCH185A5R6CK ERJ-2RKF10R0 ERJ-2RKF1210 ERJ-2RKF-20R0 KXN1332A ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer PDF

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC PDF

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec PDF

    TAJB105KLRH

    Abstract: No abstract text available
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 TAJB105KLRH PDF

    MCH185C122KK

    Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
    Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits


    Original     		AN-080 SGA-9089Z 2440MHz EAN-105081 MCH185C122KK AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK PDF

    CL10B104KONC

    Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
    Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200 PDF

    55117 inductor

    Abstract: eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914
    Text: PRELIMINARY DATA SHEET ECG013 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ 500 to 2500 MHz 45 dBm Typical OIP3 at 1960 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1900 MHz 25.5 dBm Typical P1dB at 1960 MHz Excellent Stability


    Original     		ECG013 ECG013 SS-000044-000 55117 inductor eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914 PDF

    16 pin 4x4 amplifier gsm

    Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z PDF

    TAJB105KLRH

    Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
    Text: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &


    Original     		AN-078 SXB-2089Z SXB-2089 450MHz 2140MHz TAJB105KLRH MCH185C122KK 1200pF MCH185A120JK MCH185A010CK tic 2160 LL1608-FSR27J MCH185A121JK ML200C an078 Sirenza AN-21 PDF

    CL10B104KONC

    Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
    Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021 PDF

    4069 NOT GATE IC

    Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec PDF

    NEC 718

    Abstract: LDMOS NEC
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz


    Original     		NE5520379A 24-Hour NEC 718 LDMOS NEC PDF

    TRANSISTOR R57 phillips

    Abstract: KXN1332A MCH312F105ZP HFA3524A MCH215A101JK smd transistor RA4 ERJ-2RKF-20R0 MCH182F104ZK MCH215 LL2012-F12NK
    Text: Using The HFA3524EVAL, HFA3524AEVAL Board Application Note September 1999 AN9809.2 Author: Milutin Culibrk Introduction The HFA3524, HFA3524A is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual


    Original     		HFA3524EVAL, HFA3524AEVAL AN9809 HFA3524, HFA3524A ERJ-2RKF8251 TRANSISTOR R57 phillips KXN1332A MCH312F105ZP MCH215A101JK smd transistor RA4 ERJ-2RKF-20R0 MCH182F104ZK MCH215 LL2012-F12NK PDF

    TAJB105KLRH

    Abstract: SXB-2089Z MCH185A220J PSF-S01 marking c7 sot-89
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B TAJB105KLRH MCH185A220J PSF-S01 marking c7 sot-89 PDF

    sot 23 S01

    Abstract: SXB-2089 TAJB105KLRH SXB-2089Z MCH185A1R8CK AN-078 43ACP
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		SXB-2089Z SXB-2089Z AN075 EDS-104625 sot 23 S01 SXB-2089 TAJB105KLRH MCH185A1R8CK AN-078 43ACP PDF

    MARKING RM* dbm sot89

    Abstract: No abstract text available
    Text: SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 MARKING RM* dbm sot89 PDF

    LDMOS NEC

    Abstract: No abstract text available
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ������������� ����


    Original     		NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC PDF

    J50 mosfet

    Abstract: LDMOS NEC
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC PDF

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS PDF