disadvantages of resistor
Abstract: an 3080 variable resistor 50k DS1859 Laser power supply abstract MAX3740A MAX4245 Schematic of 1K digital potentiometer MD 243 diode
Text: Maxim > App Notes > Communications Circuits Digital Potentiometers Optoelectronics Keywords: laser, laser power, laser power control, laser control circuit, laser power circuit, power control for laser Aug 24, 2004 APPLICATION NOTE 3080 Accurate Power Control of the MAX3740A Laser Driver
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MAX3740A
DS1859
com/an3080
DS1859:
MAX3740A:
AN3080,
APP3080,
Appnote3080,
disadvantages of resistor
an 3080
variable resistor 50k
Laser power supply abstract
MAX4245
Schematic of 1K digital potentiometer
MD 243 diode
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triangular generator ic
Abstract: BH6505K wave Generator IC
Text: Optical disc ICs PWM driver for CD and MD players BH6505K The BH6505K is a 4-channel PWM driver designed for CD and MD player motor and actuator drives. The power MOSFET output stage allows for applications with low power consumption. This IC also has a charge pump circuit and standard operational amplifier needed for power MOSFET gate drives , and so supports a wide spectrum of applications.
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BH6505K
BH6505K
triangular generator ic
wave Generator IC
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GE H21A1
Abstract: h21a io 49
Text: G E SOLID STATE □1 DE I 3 0 7 5 0 0 1 0011760 Optoelectronic Specifications T-Ml-73 1mm Aperture Photon Coupled Interrupter Module H21A1,H21A2,H21A3 The GE Solid State H21A Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon phototransistor in
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T-Ml-73
H21A1
H21A2
H21A3
H21A1,
H21A2,
GE H21A1
h21a io 49
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Untitled
Abstract: No abstract text available
Text: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1
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MCC56
MCD56
MCC56-06Ã
MCC56-08Ã
MCC56-12io1
MCC56-14io1
MCC56-16kÂ
MCC56-18io1
MCC66-06io8
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G 50N60
Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C
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50N50BU1
50N60BU1
100ns
120ns
50N50
50N60
O-264
G 50N60
igbt 100a
IXGH50N60B
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yx 861
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB300CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1
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P6SMB440A
P6SMB300CA
SMB/DO-214AA
yx 861
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LM-035VRA
Abstract: str 5763 LUM-512 LM035L SPR-325MVW SPR-505MVW SLR-40M LA-101LN
Text: Light Emitting Diodes LED Product Tables LED Product Tables • C h ip LEDs S M L-010 SML-020 S M L-210 S M L-310 series GaAIAs SML01 0LT /JT — SML2 1 0LT /JT SML310LT/JT Transparent clear GaAsP on GaP SML-01 OVT — SM L-210VT SML-31OVT O range 610nm
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L-010
SML-020
L-210
L-310
660nm
650nm
610nm
SML01
SML-01
L-010D
LM-035VRA
str 5763
LUM-512
LM035L
SPR-325MVW
SPR-505MVW
SLR-40M
LA-101LN
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LA603V
Abstract: LM035L LB-402D LB-402DA LR-40M LA-603VP SLR-54-MG 020MVT LB-402VK LD404V
Text: t- - i i s — Y / Light Emitting Diodes • + -7 x ^ V ^ > t.M L E D SM L-010 y 'J - X * 3 tfe a±m m f S M L-020 ->'J - X * 3 tttÜ 4 SM L-010JT S » Ä *6 (660nm ) Ä ife iS W * fe (650nm ) Ü fe S iŒ fe - SM L-010U T — G aAsP on GaP SM L-010D T
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L-010
L-020
L-010JT
L-010LT
660nm
650nm
L-010VT
635nm
L-010U
610nm
LA603V
LM035L
LB-402D
LB-402DA
LR-40M
LA-603VP
SLR-54-MG
020MVT
LB-402VK
LD404V
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Untitled
Abstract: No abstract text available
Text: TVS DIODES P6SMBJ Series — 600 Watt Surface Mount P6SMBJ Series Features • 600 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor •
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RS-481-A
E135015
P6SMBJ160
P6SMBJ160A
P6SMBJ170
P6SMBJ170A
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700v 4A mosfet
Abstract: sss6n70a
Text: SSS6N70A A d v a n c e d Power MOSFET FEATURES bvdss Low RDS on : 1.552 Ct (Typ.) 1.8 Q > • ^DS(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A (Max.) @ Vos = 700V
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SSS6N70A
300nF
700v 4A mosfet
sss6n70a
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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50N60AU1
O-264
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DM 311 BG 40
Abstract: TVS AE
Text: TVS Diodes P6SMBJ Series — 600 Watt Surface Mount P6SMBJ Series Features • RoHS Compliance designated by suffix “F” • 600 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction
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RS-481-A
E135015
DO214AA
UL94V-0
DM 311 BG 40
TVS AE
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs PWM Driver for CD and MD Players BH6505K The BH 6505K is a 4-channel PW M driver designed for CD and MD player m otor and actuator drives. The power M O SFET output stage allows for applications with low power consumption. This 1C also has a charge pump circuit
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BH6505K
BH6505K
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TO264AA
Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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IXFK90N20Q
IXFK90N20QS
O-264
O-264AA
TO264AA
IXFK90N20Q
IXFK90N20QS
TO-264-aa
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72N2
Abstract: diode 253 SMD-264 TO-264-aa 80N20
Text: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C
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IXFK72N20
IXFK80N20
72N20
80N20
80N20
O-264
UL94V-0
IXFK72N2Ô
72N2
diode 253
SMD-264
TO-264-aa
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IRFP450FI
Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Text: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O
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DOMS74ta
IRFP450/FI
IRFW450
IRFP450
IRFP450FI
IRFW450
IRFP/IRFW450
IRFP450FI
IRFP450/FI-IRFW450
7W537
GC507
7W53
GC508
C18070
IRFP450F
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IRFP450FI
Abstract: C18070
Text: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O
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DOMS74ta
IRFP450/FI
IRFW450
IRFP450
IRFP450FI
IRFP/IRFW450
IRFP450FI
irfp450/fi-irfw450
C18070
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
Cur19
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
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PDF
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
P6SMB250C
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yx 861
Abstract: yx 5103 yx 861 a
Text: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1
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P6SMB440A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
yx 861
yx 5103
yx 861 a
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Untitled
Abstract: No abstract text available
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS
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85N60C
O-264
E72873
ID100
20100315c
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85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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85N60C
O-264
E72873
ID100
20100315c
85N60C
UPS SIEMENS
E72873
ID100
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Untitled
Abstract: No abstract text available
Text: SM8610BV レーザースイッチングドライバ IC NIPPON PRECISION CIRCUITS INC. •概要 SM8610BV はポータブル CD/MD プレーヤのレーザー駆動 IC です。従来、ポータブル CD/MD プレーヤの レーザー駆動制御は定電流方式で行われていましたが、消費電力が大きくバッテリー駆動時間に制限を与えて
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SM8610BV
8610BV
275typ
SM8610BV
16pin
SM8610
NC0025A2001
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