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    METHOD D 1071 Search Results

    METHOD D 1071 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TDC1044AR4C Rochester Electronics LLC TDC1044A - ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PQCC20 Visit Rochester Electronics LLC Buy
    TDC1044AN9C Rochester Electronics LLC TDC1044A - ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PDIP16 Visit Rochester Electronics LLC Buy
    CA3306D/B Rochester Electronics LLC CA3306 - ADC, Flash Method, 6-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, CDIP18 Visit Rochester Electronics LLC Buy
    54242-107141250LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 14 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    93690-107-10LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, Press Fit, Double Row, 10 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    METHOD D 1071 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a684 603

    Abstract: MC68HC05T3 A302 w3 IGO tv circuit diagram FND 509 fnd 503 7-segment AN446 MCM2814 bra 92 1318 CD0000 uoc top 80 pin tv
    Text: Order this document as AN448/D MOTOROLA SEM ICO N D U CTO R APPLICATION NOTE AN448 "FLOF" Teletext using M6805 Microcontrollers By Peter Topping MCU Applications Motorola Ltd, East Kilbride 1. INTRODUCTION The "T" members of the MC68HC05 family of MCUs provide a convenient and cost effective method of adding


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    AN448/D AN448 M6805 MC68HC05 64-character 16-bit MC68HC05T7 56-pin a684 603 MC68HC05T3 A302 w3 IGO tv circuit diagram FND 509 fnd 503 7-segment AN446 MCM2814 bra 92 1318 CD0000 uoc top 80 pin tv PDF

    ZPU150

    Abstract: ZPU120 zener diode color band SILICON PLANAR POWER ZENER DIODE all case ZPU100 ZPU180 5 volts ZENER DIODE characteristics curve for zener diode zener 1.3W
    Text: ZPU100 - ZPU180 SILICON POWER ZENER DIODE Features Planar Die Construction 1.3W Power Dissipation Zener Voltages Available from 100V - 1 80V Hermetic Glass Package for High Reliability T D Mechanical Data Case: DO -41, Glass Leads: Solderable per MIL-STD-202, Method


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    ZPU100 -ZPU180 DO-41 -180V DO-41, MIL-STD-202, DS21405 ZPU100-ZPU180 ZPU100 ZPU120 ZPU150 ZPU120 zener diode color band SILICON PLANAR POWER ZENER DIODE all case ZPU180 5 volts ZENER DIODE characteristics curve for zener diode zener 1.3W PDF

    Untitled

    Abstract: No abstract text available
    Text: AF 45101 KftE 10-7155 EN8. FILE COPY DRAWING NO. S/M DESIGN REQUIREMENTS STANDARDS RATINGS 2310-0009 REQUIREMENTS MIL-STD-202 50 Nominal Impedance ohms Vibration DC Frequency Range (ghz) Method 204 - 4.0 Cond. D (20G's) 335 Voltage Rating (max. vrms) MIL-STD-202


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    MIL-STD-202 316/U PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTM-1071 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 0.1 – 2 900 0.2 -51 2.0:1 75 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)


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    ACTM-1071 14dBm 17dBm -20dBm MIL-E-5400, MIL-STD-202, MIL-E-16400 MIL-PRF-38534) MIL-STD-883, PDF

    M103

    Abstract: M105 M107
    Text: ACTM-1071 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 0.1 – 2 900 0.2 -51 2.0:1 75 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)


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    ACTM-1071 14dBm 17dBm -20dBm MIL-E-5400, MIL-STD-202, MIL-E-16400 MIL-STD-202F, MIL-PRF-38534) MIL-STD-883, M103 M105 M107 PDF

    tunnel diode application

    Abstract: No abstract text available
    Text: ACTM-1071 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF


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    ACTM-1071 14dBm 17dBm -20dBm tunnel diode application PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTM-1071 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF


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    ACTM-1071 14dBm 17dBm PDF

    EE-SX112

    Abstract: EE-SX139 OMRON 1041 photomicrosensor 1041 EE-SX1070 OMRON 1070 ee-sx129 photomicrosensor EE-SG3 EE-SX107
    Text: omRon I Photomicrosensor EE-SX1018/ 1025/198/ 199/ 1041/ 1042/ 1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width • Stable sensing at temperatures as high as 95°C {EE-SX1041, EE-SX1070 . * Compact model with a 5-mm wide sensing slot


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    EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042} EE-SX1018) EE-SX1025) EE-SX1018/ EE-SX112 EE-SX139 OMRON 1041 photomicrosensor 1041 EE-SX1070 OMRON 1070 ee-sx129 photomicrosensor EE-SG3 EE-SX107 PDF

    Filter Banks

    Abstract: No abstract text available
    Text: SWITCHABLE FILTER BANK MODEL: FB-S-107128 FEATURES • Single input and output • Insertion loss.5 dB maximum • Amplitude balance. 0.5 dB maximum • VSWR.1.5:1 maximum MITEQ's model FB-S-107128 integrated, two part, switchable filter bank features two channelized, printed circuit


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    FB-S-107128 Filter Banks PDF

    OMRON 1041

    Abstract: OMRON 1070 EE-SX1018 OMRON 1018 sx1042 EE-SX1025 EE-SX1041 EE-SX1042 EE-SX1070 EE-SX1071
    Text:  EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output  Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070  Compact model with a 5-mm wide slot (EE-SX1041)


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    E-SX198/199/1018/1025/1041/1042/1070/1071 EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042) EE-SX1018) EE-SX1025) EE-SX10 1-800-55-OMRON OMRON 1041 OMRON 1070 EE-SX1018 OMRON 1018 sx1042 EE-SX1025 EE-SX1041 EE-SX1042 EE-SX1070 EE-SX1071 PDF

    photomicrosensor 1041

    Abstract: OMRON 1041 EE-SX1042 EE-SX198 EE-SX1025 OMRON 1070 method d 1071 C03AE 1041 voltage regulator SX1041
    Text:  EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output  Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070  Compact model with a 5-mm wide slot (EE-SX1041)


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    E-SX198/199/1018/1025/1041/1042/1070/1071 EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042) EE-SX1018) EE-SX1025) EE-SX10 EE-SX1071 photomicrosensor 1041 OMRON 1041 EE-SX1042 EE-SX198 EE-SX1025 OMRON 1070 method d 1071 C03AE 1041 voltage regulator SX1041 PDF

    OMRON 1041

    Abstract: OMRON 1070 ci 1041 EE-SX1018 photomicrosensor 1041 method d 1071 ee-sx a 1042 y
    Text: omrcon E E -S X 1018/ 1025/ 198/ 199/1041 / 1042/ 1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output • Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070 ■ Compact model with a 5-mm wide slot


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    EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042) EE-SX1018) EE-SX1025) EE-SX1018 EE-SX1025 EE-SX198 OMRON 1041 OMRON 1070 ci 1041 EE-SX1018 photomicrosensor 1041 method d 1071 ee-sx a 1042 y PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡¡M il M 65856 DATA SHEET_ 32,768 x 8 STATIC RAM DESCRIPTION . . BICMOS FOR OPTIMUM SPEDD/POWER HIGHSPEED COMMERCIAL : 10712/15 ns max MILITARY : 12715 ns (max) LOW ACTIVE POWER 1017 mW . . . . LOW STANDBY POWER 165 mW TTL-COMPATIBLE INPUTS AND OUTPUTS


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    M-65856 65856/Rev 00G33 bfl45fc, DDG33 PDF

    edi minibridge pb20

    Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
    Text: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047


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    PDF

    2N6659

    Abstract: 2N6660 2N6661 TN0102N2 TN0104N2 TN0110N2 TN0520N2 TN0606N7 VN0106N7 VN13
    Text: DMOS /HVCMOS Standard Product Flow Wafer Fab Assembly QC Photomasks and Substrates Saw and Visual Wafer Fabrication QC Visual Inspection 5 QA Plant Clearance Die orders only QC Finished Wafer Inspection Die Attach QC Die Attach Monitor Wafer Backside Process


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    VN1310N2 TN0110N2 VN2206N2 TN0520N2 VN2210N2 TN0606N7 VN2222NC TN0610N2 VP0104N7 TP0104N2 2N6659 2N6660 2N6661 TN0102N2 TN0104N2 TN0110N2 TN0520N2 TN0606N7 VN0106N7 VN13 PDF

    systron Donner 410

    Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


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    MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor PDF

    2N7616

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 July 2013. INCH-POUND MIL-PRF-19500/744D 4 January 2013 SUPERSEDING MIL-PRF-19500/744C 1 May 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


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    MIL-PRF-19500/744D MIL-PRF-19500/744C 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, MIL-PRF-19500. 2N7616 PDF

    transistor jt

    Abstract: M558-01 M-558
    Text: MOTOROLA 6367254 SC MOTOROLA ÍX ST R S /R SC F> Tb D Ë J bBbVSSM 0005412 D 96D 8 2 4 1 2 <X S T R S / R F - M A X I M U M R A T IN G S Sym bol Value Unit V C EO 60 Vdc Coltector-Base Voltage VC B 60 Vdc Emitter-Base Voltage V e b 5.0 Vdc ic 600 mAdc Rating


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    M558-01 M558-02 M558-02 558-02Total Mil-Std-750, MH-Std-750, transistor jt M-558 PDF

    MIL-M-28837

    Abstract: No abstract text available
    Text: Mini-Circuits Guarantees Quality A lth o u g h w e h a v e g o n e b e y o n d o u r past ob jec tive o f using S PC , pre-co n tro l an d d esig n o f e x p e rim e n ts redu ce e x c e e d i n g 0 .1 % A Q L - no rejects, n ot ev en on e per 1000 variability o f p e rfo rm a n c e . “ S k in n y S ig m a ” is o u r w a y o f


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    MIL-C-39012 MIL-M-28837 PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. INCH-POUND MIL-PRF-19500/663F 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS,


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    MIL-PRF-19500/663F MIL-PRF-19500/663E 2N7431, 2N7432, 2N7433, MIL-PRF-19500. PDF

    2N1778A

    Abstract: 2N2619A 2N1774A 2N1771A method d 1071 2N1772A 2N1776A 2N1777A b-210-51 2N1776A JANTX
    Text: INCH-POUND MIL-PRF-19500/168J 13 June 2007 SUPERSEDING MIL-PRF-19500/168H 4 December 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 September 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON, TYPES


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    MIL-PRF-19500/168J MIL-PRF-19500/168H 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, 2N2619A, MIL-PRF-19500. 2N1778A 2N2619A 2N1774A 2N1771A method d 1071 2N1772A 2N1776A 2N1777A b-210-51 2N1776A JANTX PDF

    atm lu 738

    Abstract: No abstract text available
    Text: RELIABILITY REPORT RELIABILITY AND FAILURE M ECHANISMS FUNDAM ENTALS -Through accelerated stresses we ascertain the value of the com ponents failure rates, in term s of how many devices in percent are expected to fail every 1000 hours of operation (X or F.R.)


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    failures/10 100cC/watt atm lu 738 PDF

    DC4066

    Abstract: MIL-PRF-19500 544 electrical 2N5206 2N683 2N692A 2N682 2N685 2N686 2N692 2N685 JANTX
    Text: INCH-POUND MIL-PRF-19500/108K 4 December 2006 SUPERSEDING MIL-PRF-19500/108J 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX


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    MIL-PRF-19500/108K MIL-PRF-19500/108J 2N682, 2N683, 2N685 2N692, 2N692A, 2N5206, MIL-PRF-19500. DC4066 MIL-PRF-19500 544 electrical 2N5206 2N683 2N692A 2N682 2N686 2N692 2N685 JANTX PDF

    minor project proposal on electronics

    Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
    Text: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C


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    GD13ttt. MIL-S-19500/436 1N5461B 1N5476B 1N5461C 1N5476C DDD012S 0D13bà minor project proposal on electronics 436 diode 1N5466B JANTXV diode LN 4001 1N5462C 1N5463C PDF