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    Vishay Semiconductors VLMG1500-GS08

    LED YLW-GRN 0402 SMD
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    Same Sky CDMG15008-03A

    SPEAKER 8OHM 300MW TOP PORT 88DB
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    DigiKey CDMG15008-03A Tray 1,273 1
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    Amphenol SSI MG1-5000-A-9V-R

    SENSOR DIGITAL GAUGE 5000PSI LCD
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    DigiKey MG1-5000-A-9V-R Box 41 1
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    Murata Power Solutions NMG1505SC

    DC DC CONVERTER 5V 2W
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    DigiKey NMG1505SC Tube 13 1
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    Gowanda Electronics Corporation 10MG150K

    MOLDED NON-MAGNETIC INDUCTOR AXL
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    MG150 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG1-5000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 5000PSI LCD Original PDF
    MG-1500-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1500PSI LCD Original PDF
    MG1-500-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 500PSI LCD Original PDF
    MG-1500-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1500PSI LCD Original PDF
    MG-1500-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1500 PSI 1/8 NPT 9V Original PDF
    MG-1500-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1500 PSI 4-20 MA 1/8 NPT Original PDF
    MG150G2DL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150G2DL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150G2YK1 Unknown Scan PDF
    MG150G2YL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG150G2YL1 Unknown Scan PDF
    MG150G2YL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150G2YL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150H1FL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG150H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150H2CL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG150H2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150H2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150H2DL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF

    MG150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG150Q2YS40

    Abstract: No abstract text available
    Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


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    MG150Q2YS40 2-109C1A MG150Q2YS40 PDF

    MG150J2YS50

    Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
    Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode


    Original
    MG150J2YS50 2-95A1A 000707EAA2 MG150J2YS50 mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50 PDF

    MG150J1JS50

    Abstract: mg150j1
    Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original
    MG150J1JS50 2-95A2A MG150J1JS50 mg150j1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)


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    MG150Q2YS40 2-109C1A PDF

    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original
    MG150J7KS60 00V/150A 2-108G1B PDF

    TOSHIBA IGBT

    Abstract: MG150Q2YS65H PC890
    Text: MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm • High input impedance • Enhancement-mode • The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


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    MG150Q2YS65H 2-95A4A 150transportation TOSHIBA IGBT MG150Q2YS65H PC890 PDF

    MG150H2CL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)


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    MG150H2CL1 MG150H2CL1 PDF

    MG150Q2YS40

    Abstract: CV200
    Text: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)


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    MG150Q2YS40 2-109C1A MG150Q2YS40 CV200 PDF

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Ic=150A)


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    MG150M2YK2 PDF

    MG150M2CK1

    Abstract: CW801
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . Power Translators and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=150A)


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    MG150M2CK1 MG150M2CK1 CW801 PDF

    ic 393

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    MG150J1JS50 50J1JS50 30//s 15/iS ic 393 PDF

    MG150J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG150J2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APP LICATIONS. . High Input Impedance . High Speed : tf~0. 35jis Max. trr-O.25 m 5 (Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode


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    MG150J2YS1 35jis MG150J2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.


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    MG150J7KS50 150J7KS50 6o----12 16o---- PDF

    MG150Q2YK1

    Abstract: No abstract text available
    Text: MG150Q2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


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    MG150Q2YK1 MG150Q2YK1 PDF

    MG150H2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0us Max. trr=0.5us (Max.) Low Saturation Voltage : VcE(Sat)=5.0V(Max,ï Enhancement-Mode Includes a Complete Half Bridge in One


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    MG150H2YS1 MG150H2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE=100 Min. (Ic=150A) . Low Saturation Voltage


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    MG150G2YL1 PDF

    transistor jc 817

    Abstract: MG150q2yk1 470G jc 817
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling


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    MG150Q2YK1 109B1A 00A/jus transistor jc 817 MG150q2yk1 470G jc 817 PDF

    mg150h2yl1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE= 80 Min. (Ic=150A) . Low Saturation Voltage


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    MG150H2YL1 G150H2YL1 mg150h2yl1 PDF

    MG150H1FL1

    Abstract: IQ1000 IC280 MG150H
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H1FL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic=150A) . Low Saturation Voltage


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    MG150H1FL1 MG150H1FL1 IQ1000 IC280 MG150H PDF

    MG150

    Abstract: MG150Q2YS40 56i2
    Text: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)


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    MG150Q2YS40 02YS40 MG150 MG150Q2YS40 56i2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)


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    MG150J1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG150J2YS50 T O SH IB A MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 12 5.4 * 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    MG150J2YS50 50J2YS50 2-95A1A PDF

    G150J2YS50

    Abstract: MG150J2YS50
    Text: MG150J2YS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50J2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 - ^ 5.4 ± 0.3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One


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    MG150J2YS50 G150J2YS50 G150J2YS50 MG150J2YS50 PDF

    MG150J1BS11

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG150J1BS11 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf^l.O/^s Max. (Iç; = 150A) Low Saturation Voltage : (sat) -2.7V (Max.) (Iç; = 150A)


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    MG150J1BS11 150J1B 2-33F1A MG150J1BS11 PDF