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    MG50Q1ZS50 Search Results

    MG50Q1ZS50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50Q1ZS50 Toshiba TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A) Original PDF
    MG50Q1ZS50 Toshiba GTR Module Silicon N Channel IGBT Original PDF

    MG50Q1ZS50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage


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    MG50Q1ZS50 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode


    Original
    MG50Q1ZS50 2-94D7A PDF

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original
    MG50Q1ZS50 MG50Q1ZS50 PDF

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @Inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)


    Original
    MG50Q1ZS50 MG50Q1ZS50 PDF

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q1 ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.)


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    MG50Q1ZS50 MG50Q1 2-94D7A MG50Q1ZS50 PDF

    MG50Q1ZS50

    Abstract: ZS50 50ARC
    Text: TO SH IBA MG50Q1ZS50 MG50Q1 ZS50 T O S H IB A G TR M O D U LE SILIC O N N C H A N N E L IG BT HIGH PO W ER SW ITCH IN G A P P LIC A T IO N S M O TO R C O N T R O L A P P LIC A T IO N S • • • • • High Input Impedance High Speed : tf = 0.3 jus Max.


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    MG50Q1ZS50 MG50Q1 2-94D7A 125-C MG50Q1ZS50 ZS50 50ARC PDF

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original
    MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original
    SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF