MGFC1403 Search Results

MGFC1403 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC1403		Mitsubishi	For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type		Scan	PDF
MGFC1403-A02		Mitsubishi	FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE		Scan	PDF

MGFC1403 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGFC1403 Abstract: FET Spec sheet s3v1 fet 3004 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS, N-CHANNEL SCHOTTKY BARRIER GATE TYPE D ESC R IPTIO N OUTLINE DRAWING The M GFC1403 low-noise GaAs FET w ith an N -channel Schottky gate is designed for use in S to Ku band am pli	OCR Scan	MGFC1403 MGFC1403 12GHz FET Spec sheet s3v1 fet 3004	PDF
MGF1403 Abstract: 3B14-03 b1403 MGFC1403 I-3-40 MGF1903 1303B Text: Die_ MGFC1403 Package MGF1303B A m itsu b ish i MGF1903B ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using the MGFC1403 die. These devices are N-channel Schottky gate type and are suitable for use in amplifier and oscillator applications.	OCR Scan	MGFC1403 MGF1303B/1403/1903B MGF1903B MGF1303B MGF1903B MGF1403 3B14-03 b1403 I-3-40 MGF1903 1303B	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

Original

M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

PDF

MGFC1403

Abstract: FET Spec sheet s3v1 fet 3004
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS, N-CHANNEL SCHOTTKY BARRIER GATE TYPE D ESC R IPTIO N OUTLINE DRAWING The M GFC1403 low-noise GaAs FET w ith an N -channel Schottky gate is designed for use in S to Ku band am pli

OCR Scan

MGFC1403 MGFC1403 12GHz FET Spec sheet s3v1 fet 3004

PDF

MGF1403

Abstract: 3B14-03 b1403 MGFC1403 I-3-40 MGF1903 1303B
Text: Die_ MGFC1403 Package MGF1303B A m itsu b ish i MGF1903B ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using the MGFC1403 die. These devices are N-channel Schottky gate type and are suitable for use in amplifier and oscillator applications.