MGFX35V9500 Search Results

MGFX35V9500 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFX35V9500		Unknown	FET Data Book		Scan	PDF

MGFX35V9500 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MGFX35 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGFX35V9500 i 9 .S — 10.0GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 9 5 0 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 9 .5 ~ 10 .0 G H z band am plifiers. The herm etically sealed metal-ceramic	OCR Scan	MGFX35V9500 MGFX35	PDF
MGFK30M4045 Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 Text: - 156 - M € ± € m 1 & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228	OCR Scan	MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ	PDF
mgfx35v0510 Abstract: FX35V0510-51 MGFX35V0005 Text: ^M ITSUBISHI MGFX35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION • Internally matched to 50Q • High output power PldB = 3.5W (TYP) This family of devices use high performance source island via-hole GaAs die which offer excellent electrical and thermal resistance	OCR Scan	MGFX35VXXXX MGFX35VXXXX MGFX35V9095 MGFX35V9500 MGFX35V0005 MGFX35V0510 MGFX35V1722 MGFX35V9095-01 MGFX35V9095-51 MGFX35V9500-01 FX35V0510-51	PDF
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan		PDF