MICRON CMOS 1988 Search Results

MICRON CMOS 1988 Result Highlights (5)

Part	Manufacturer	Description
TC74HC14AF	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOP14
74VHCT541AFT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC14D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14
74VHC541FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC04D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14

MICRON CMOS 1988 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MT8880AC Abstract: MT8870CE MT8880CE MT8870C JEDEC-22BA102 cd200 mt8870 example code 87Q4 MT8870C-1 MT88L70 Text: MITEL SEMICONDUCTOR RELIABILITY MONITORING PROGRAM 1996 Table of Contents 1 INTRODUCTION TO MITEL RELIABILITY MONITORING . 1-1 2 RELIABILITY MONITOR TEST METHODOLOGY . 2-1	Original	MT88870CS MT9126AS MT8880AC MT8870CE MT8880CE MT8870C JEDEC-22BA102 cd200 mt8870 example code 87Q4 MT8870C-1 MT88L70	PDF
N20X DIODE Abstract: A35355 TA8923 ta8872 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825 Text: Reliability Update Table of Contents Overview . 1 Organization of the Update . 1	Original	100LPQFP 160LPQFP 28LSOIC N20X DIODE A35355 TA8923 ta8872 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825	PDF
Difference VHC LVC Abstract: LCX16244 transmission line theory motorola hb205 motorola ac244 AC244 HB205 LVX4245 LVXC3245 VCX16244 Text: AND8021/D An Introduction to VCX Logic Prepared by: Fred Zlotnick ON Semiconductor http://onsemi.com APPLICATION NOTE ON Semiconductor is introducing a .35 micron family of logic, called VCX. This family achieves a maximum propagation delay of < 3ns and can operate between 3.3 and	Original	AND8021/D r14525 Difference VHC LVC LCX16244 transmission line theory motorola hb205 motorola ac244 AC244 HB205 LVX4245 LVXC3245 VCX16244	PDF
burndy 8 Abstract: burndy 10 pin burndy connector IS27C512 IS27HC256 burndy CELP diode databook IS61C1024 IS61C1024L Text: ISSI SHORT FORM CATALOG Integrated Silicon Solution, Inc. was founded in 1988 with a new approach to supplying high-speed integrated circuits. Recognizing the multitude of advantages offered by the then new semiconductor foundries, ISSI applied this technology to very high-performance CMOS devices. The	Original	600-mil 300-mil 400-mil 450-mil burndy 8 burndy 10 pin burndy connector IS27C512 IS27HC256 burndy CELP diode databook IS61C1024 IS61C1024L	PDF
i8237A Abstract: i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30 Text: V L S I TECHNOLOGY INC IflE D H P V L S I T ech n o lo gy, inc. • T3flfl347 0D0324L. S ■ t- ^ VMC10 AND VMC100 SERIES 2-MICRON AND 1.5 MICRON ADVANCED CMOS MEGACELL FAMILY FEATURES FAMILY DESCRIPTION ASIC COMPATIBLE • Library of m icroprocessor peripheral functions	OCR Scan	T3flfl347 0D0324L. VMC10 VMC100 82C84A 82C88 VSY368C45-YYZ20 VSY382C37-YYZ20 VSY382C50-YYZ20 i8237A i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30	PDF
Untitled Abstract: No abstract text available Text: SYSTEMS SLA8000 Series June 1988 VERY HIGH SPEED CHANNELLESS CMOS GATE ARRAYS D escription The SLA8000 Series consists of a group of seven very high-speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron sili	OCR Scan	SLA8000 SLA827S	PDF
PD65000 Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4 Text: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and	OCR Scan	PD65000 000to NECEL-000837 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4	PDF
IMS1400M Abstract: IMS1403LM IMS1403M IMS1403M-45 16kx1 static ram IMS1400 Text: IMS1403M IMS1403LM CMOS High Performance 16K x 1 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INMOS1Very High Speed CM OS • Advanced Process -1 .6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to +125° C	OCR Scan	IMS1403M IMS1403LM 16Kx1 MIL-STD-883C IMS1400M 20-Pin, 300-mil IMS1403M/IMS1403LM IMS1400M IMS1403LM IMS1403M-45 16kx1 static ram IMS1400	PDF
80386 microprocessor functional block diagram Abstract: block diagram of 80386 microprocessor intel 80386 motherboard, IOAIO intel 80386 block diagram pinout 80386 80386 microprocessor block diagram and pin diagram intel 80386 pin diagram 80386 pin configuration pin of microprocessor 80386 Text: Advance Information FE6022 Address And Data Buffer Devices □ □ □ Provides Address and Data Buffos that interface to the Micro Channel * Meets Micro Channel AC/DC Specifications Contains Peripheral Bus Address and Data Buf fos □ Low Power 1.25 Micron CMOS Technology	OCR Scan	FE6022 132-Lead FE6500 70/80-compatible 7S40i' 80386 microprocessor functional block diagram block diagram of 80386 microprocessor intel 80386 motherboard, IOAIO intel 80386 block diagram pinout 80386 80386 microprocessor block diagram and pin diagram intel 80386 pin diagram 80386 pin configuration pin of microprocessor 80386	PDF
VGT200 Abstract: full subtractor circuit using decoder and nand ga Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array	OCR Scan	VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga	PDF
Untitled Abstract: No abstract text available Text: FLEX 8000 Programmable Logic Device Family February 1993, ver. 1 Features Data Sheet ^ □ □ □ □ □ □ □ □ □ □ High-density, register-rich programmable logic device family 4,000 to 24,000 usable gates 452 to 2,252 registers Fabricated on a 0.8-micron CMOS SRAM technology	OCR Scan		PDF
S-MOS navnet Abstract: S-MOS asic B16c F1841 Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel	OCR Scan	SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841	PDF
LI26 Abstract: ISP9119 ISP9119CN44 ISP9119CPL ISP9119IDL ISP9119IN44 ISP9119IPL ISP9119MDL Text: ISP9119 GE Solid State FIFO RAM Controller GENERAL DESCRIPTION FEATURES The ISP9119 FIFO RAM Controller FRC , together with a static RAM array, forms a First-In-First-Out (FIFO) buffer. The ISP9119 FRC, implemented in Intersil’s 1.5 micron AVLSI CMOS technology, is a pin for pin compatible re	OCR Scan	ISP9119 ISP9119 LI26 ISP9119CN44 ISP9119CPL ISP9119IDL ISP9119IN44 ISP9119IPL ISP9119MDL	PDF
B8228 Abstract: No abstract text available Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8	OCR Scan	SLA10000 SLA10000 B8228	PDF

T157WG Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and	OCR Scan	GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE	PDF
1kx1 static ram Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616 Text: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si	OCR Scan	HS-65641/44/45RH HS-65646/48RH X106RAD S-82C 59ARH S-65142RH S-3560RH S-3569RH S-76161RH 1kx1 static ram 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616	PDF
2500ECL Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.	OCR Scan	BR334/D 2500ECL Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca	PDF
HCA62A17 Abstract: No abstract text available Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.	OCR Scan	BR334/D HCA62A17	PDF
Untitled Abstract: No abstract text available Text: PLESSIEY SEMICONDUCTORS Appendix 7 ; CLA60000 SERIES CHANNELLESS CMOS GATE ARRAYS Supersedes December 1988 Edition This advanced family o f gate arrays uses many innovative techniques to achieve 110K gates pa r ch'p - system clock speeds in excess o f 70MHz are achievable. The combinatbn	OCR Scan	CLA60000 70MHz	PDF
MT56C0816 Abstract: AW 55 IC LT 5251 80386 cache Text: M in P n M * ^ MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM	OCR Scan	MT56C0816 52-pin MT56C0816EJ-25 4Kx16 AW 55 IC LT 5251 80386 cache	PDF
"General Circuit Interface" Abstract: No abstract text available Text: dëà i/W \ National SlA Semiconductor PRELIMINARY TP3410 ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver General Description The TP3410 is a complete monolithic transceiver for ISDN Basic Access data transmission at either end of the U inter face. Fully compatible with ANSI specification T 1.601 -1988,	OCR Scan	TP3410 TP3420 TP3054/7 TP3075/6 HPC16400 TP3451 TL/H/9151-1 "General Circuit Interface"	PDF
micron cmos 1988 Abstract: No abstract text available Text: ADVANCE 256K X 18/128K x 36 2.5V I/O, FLOW -THROUGH LATE WRITE SRAM l^ ic n o N Dual Clock and Single Clock FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)	OCR Scan	18/128K MT59L256V18F MT59L128V36F MT50L2S6V18F micron cmos 1988	PDF
SGS-THOMSON SMD Abstract: No abstract text available Text: INTRODUCTION The SGS-THOMSON Microelectronics Group SRAM Databook is a comprehensive collection of information on advanced, high density, high speed SRAM products for specific applications. SGS-THOMSON Microelectronics is a major supplier of a wide range of sem iconductor devices,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: PERFORMANCE SEMICONDUCTOR G3E D J TObSST? OOOOBM? fl P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS r r-V é -3 3 - /O ' FEBRUARY 1988 - FEATURES • Full CMOS, 6T Cell Single Power Supply — 5V ±10%	OCR Scan	P4C188/P4C188L P4C188L -22-P -24-Pin -22-Pin -17PC -20PC -20CC -20LC -25PC	PDF

MICRON CMOS 1988 Search Results

MICRON CMOS 1988 Result Highlights (5)

MICRON CMOS 1988 Datasheets Context Search

MT8880AC

N20X DIODE

Difference VHC LVC

burndy 8

i8237A

Untitled

PD65000

IMS1400M

80386 microprocessor functional block diagram

VGT200

Untitled

S-MOS navnet

LI26

B8228

T157WG

1kx1 static ram

2500ECL

HCA62A17

Untitled

MT56C0816

"General Circuit Interface"

micron cmos 1988

SGS-THOMSON SMD

Untitled