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    MICROWAVE TRANSISTOR SIEMENS Search Results

    MICROWAVE TRANSISTOR SIEMENS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE TRANSISTOR SIEMENS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFQ28

    Abstract: Q62702-F527 CJCO D 843 Transistor
    Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor PDF

    Transistor BFr 99

    Abstract: Transistor BFR 96 transistor 2sc 548
    Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed


    OCR Scan     		fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548 PDF

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma PDF

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 PDF

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 PDF

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 PDF

    bfr 547

    Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
    Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise


    OCR Scan     		fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •


    OCR Scan     		BFY180 Q97301013 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		BFY183 Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz


    OCR Scan     		Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY280 GXM05552 PDF

    A21E

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz


    OCR Scan     		BFY181 Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A21E PDF

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY193 GXM05552 PDF

    35 micro-X Package MARKING CODE Q

    Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •


    Original     		BFY450 19dBm QS9000 35 micro-X Package MARKING CODE Q BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3 PDF

    transistor C 5611

    Abstract: 35 micro-X Package MARKING CODE Q
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY450 19dBm 25-Line Transistor25 QS9000 transistor C 5611 35 micro-X Package MARKING CODE Q PDF

    35 micro-X Package MARKING CODE Q

    Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		BFY420 QS9000 35 micro-X Package MARKING CODE Q BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K" PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P - i d B =19dBm 1.8 GHz Max. Available Gain G m a = 16dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY450 19dBm Transistor25 QS9000 PDF

    RF TRANSISTOR NPN MICRO-X

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY405 Transistor25 QS9000 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY420 Transistor25 QS9000 PDF

    microwave transistor siemens

    Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY420 25-Line Transistor25 QS9000 microwave transistor siemens 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S PDF

    motion sensor doppler

    Abstract: microwave RADAR motion sensors doppler sensor microwave motion sensors 24 GHz Microwave Doppler Radar Speed Sensor motion DOPPLER motion sensor doppler effect motion sensor based on doppler effect automatic door opening sensor microwave motion sensor
    Text: Motion Sensors 3 Motion Sensors 3.1 Functional Description The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded


    Original     		PDF

    24 GHz Microwave Doppler Radar Speed Sensor

    Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
    Text: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded


    OCR Scan     		PDF