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    MJ11016 Price and Stock

    onsemi MJ11016G

    TRANS NPN DARL 120V 30A TO204
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    DigiKey MJ11016G Tray 92 1
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    Avnet Americas MJ11016G Tray 75 11 Weeks 100
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    MJ11016G Bulk 18 Weeks, 1 Days 1
    • 1 $6.21
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    • 100 $4.22
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    Mouser Electronics MJ11016G 1,150
    • 1 $6.13
    • 10 $4.03
    • 100 $3.93
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    Verical MJ11016G 200 10
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    Newark MJ11016G Bulk 93 1
    • 1 $6.21
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    Onlinecomponents.com MJ11016G 200
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    TME MJ11016G 51 1
    • 1 $8.14
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    Avnet Asia MJ11016G 11 Weeks 300
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    Avnet Silica MJ11016G 100 12 Weeks 100
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    EBV Elektronik MJ11016G 13 Weeks 100
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    Master Electronics MJ11016G 200
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    onsemi MJ11016

    TRANS NPN DARL 120V 30A TO204
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJ11016 Tray
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    Bristol Electronics MJ11016 8
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    Central Semiconductor Corp CP147-MJ11016-WN

    TRANS NPN DARL 120V 30A DIE
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    Central Semiconductor Corp CP147-MJ11016-CT

    TRANS NPN DARL 120V 30A DIE
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    Solid State Devices Inc (SSDI) MJ11016

    To 3 30 Amp Darlington Transistors Npn Rohs Compliant: Yes |Solid State MJ11016
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    Newark MJ11016 Bulk 25
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    MJ11016 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ11016 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11016 On Semiconductor DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON Original PDF
    MJ11016 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    MJ11016 Various Russian Datasheets Transistor Original PDF
    MJ11016 Wing Shing Computer Components NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11016 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11016 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11016 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11016 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11016 Motorola 30 Amp Darlington Power Transistors Complementary Silicon 60-120 Volts 200 Watts Scan PDF
    MJ11016 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11016 Unknown Transistor Replacements Scan PDF
    MJ11016 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11016 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11016 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ11016 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 30A, 120V, Pkg Style TO204 Scan PDF
    MJ11016 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ11016G On Semiconductor Bipolar Power TO3 NPN 30A 120V Original PDF

    MJ11016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF MJ11016 O204AA) 18-Jun-02

    MJ11015G

    Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original
    PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x

    Mj11015

    Abstract: No abstract text available
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original
    PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D Mj11015

    MJ11016

    Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
    Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    Original
    PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015

    MJ11015G

    Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original
    PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015

    MJ11016

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF MJ11016 O204AA) 31-Jul-02 MJ11016

    mj11015

    Abstract: pnp resistor mj11012 transistor MJ11016
    Text: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor


    Original
    PDF MJ11015 MJ11012 MJ11016 pnp resistor transistor MJ11016

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.


    Original
    PDF MJ11015 MJ11016 C-120 Rev310310E

    MJ11015G

    Abstract: MJ11016G MJ11015 mj110156 MJ11012 MJ11012G MJ11016
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original
    PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 O-204AA MJ11015G MJ11016G MJ11015 mj110156 MJ11012 MJ11012G

    Untitled

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF MJ11016 O204AA) 16-Jul-02

    MJ11016

    Abstract: npn 120v 10a transistor 120v 10a transistor
    Text: NPN MJ11016 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    PDF MJ11016 MJ11016 npn 120v 10a transistor 120v 10a transistor

    Untitled

    Abstract: No abstract text available
    Text: MJ11016 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


    Original
    PDF MJ11016

    MJ11015

    Abstract: MJ11012 MJ11016 mj11016 mexico
    Text: ON Semiconductort PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 Min @ IC – 20 Adc


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    PDF MJ11015 MJ11016 MJ11012 r14525 MJ11012/D MJ11015 MJ11012 MJ11016 mj11016 mexico

    MJ11015

    Abstract: MJ11015-11016 MJ11016
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.


    Original
    PDF MJ11015 MJ11016 C-120 Rev310310E MJ11015-11016

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


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    PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original
    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    mj11015

    Abstract: MJ11014 MJ11011
    Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon


    OCR Scan
    PDF MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011

    mj11015

    Abstract: mj11011
    Text: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T | XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E


    OCR Scan
    PDF MJ11015 MJ11014 MJ11016 mj11015 mj11011

    MJ11011

    Abstract: MJ11014
    Text: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    OCR Scan
    PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11011, MJ11011

    mj11011

    Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016
    Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY


    OCR Scan
    PDF MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 MJ11014 MJ11016 MJ11012 Variable resistor 10K ohm transistor MJ11016

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan
    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"