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    MJ4035

    Abstract: Darlington Transistors marking code TO3 "Darlington Transistors" MJ4032 transistors pnp 100v 10A
    Text: Central MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier


    Original     		PDF MJ4032 MJ4035 MJ4032, 100mA Darlington Transistors marking code TO3 "Darlington Transistors" transistors pnp 100v 10A

    MJ4032

    Abstract: MJ4035
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ GENERAL PURPOSE SWITCHING


    Original     		PDF MJ4032 MJ4035 MJ4035 MJ4032. MJ4032

    MJ4035

    Abstract: mj4032 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034
    Text: MJ4030 – MJ4031 – MJ4032 PNP MJ4033 – MJ4034 – MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc


    Original     		PDF MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 MJ4033/34/35 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034

    MJ4035

    Abstract: MJ4032 P003F
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • ■ ■ ■ 1 APPLICATIONS ■ GENERAL PURPOSE SWITCHING


    Original     		PDF MJ4032 MJ4035 MJ4035 MJ4032. MJ4032 P003F

    mj4032

    Abstract: MJ4035 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier general purpose of SILICON diode
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING


    Original     		PDF MJ4032 MJ4035 MJ4035 MJ4032. mj4032 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier general purpose of SILICON diode

    MJ4032

    Abstract: MJ4035 P003N transistor b 1185
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and


    Original     		PDF MJ4032 MJ4035 MJ4035 MJ4032. MJ4032 P003N transistor b 1185

    MJ4032

    Abstract: MJ4035
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 APPLICATIONS ■ GENERAL PURPOSE SWITCHING


    Original     		PDF MJ4032 MJ4035 MJ4035 MJ4032. MJ4032

    Untitled

    Abstract: No abstract text available
    Text: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r


    Original     		PDF MJ4032 MJ4035 MJ4035

    MJ4035

    Abstract: mj4032 MJ4033 MJ4034 MJ4030 MJ4031
    Text: MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc • Monolithic Construction with Built-in Base Emitter Shunt Resistor


    Original     		PDF MJ4030/31/32 MJ4033/34/35 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4035 mj4032 MJ4033 MJ4034 MJ4030 MJ4031

    MJ6503

    Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5


    Original     		PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4033 MJ6503 PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40

    PMD10K100

    Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8


    Original     		PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4000 PMD10K100 PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60

    box54c

    Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L


    Original     		PDF B0262B B0682 2SB1098M 2SB1098L 2SB1098K 2SB1227 2SB885 SGS127 box54c BOX34C b0336 BOW84C B0650 2SB1100K BOW24C 2SB1099 2SB897

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    MJ4035

    Abstract: J4032 mj4032
    Text: SGS-THOMSON MJ4032 MJ4035 ItLIigTTlOiöOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS


    OCR Scan     		PDF MJ4032 MJ4035 MJ4035 MJ4032. J4032

    MJ4036

    Abstract: MJ4032 MJ4035 MJ4033 ITO-31 225-j MJ4030 MJ4031 MJ4034 mj1034
    Text: MJ4030, MJ4031, MJ4032 PNP SILICON MJ4033, MJ4034, MJ4035 NPN 16 A M PER E D A R L IN G T O N POWER T R A N SIST O R S CO M PL EM EN T A R Y SILIC O N M E D IU M POWER C O M PLEM EN TA R Y SIL IC O N T R A N SIS T O R S 60-100 V O L T S 150 W ATTS . . . for use as output devices in complementary general purpose


    OCR Scan     		PDF MJ4030, MJ4031, MJ4032 MJ4033, MJ4034, MJ4035 MJ4030 MJ4033 MJ4031 MJ4036 ITO-31 225-j MJ4034 mj1034

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60


    OCR Scan     		PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 NM4033

    J901

    Abstract: PMD1602K PMD16K100 PMD12K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. •e PD bvc b o hpE V cS O @ ic VCE(SAT) @*c TYP (A) NPN PN P BUY69C (W) MAX *TYP (V) (V) MIN UH M m in MIN MAX 2.5 3.3 8.0 10* (A) (V) (A) MAX (MHZ) MIN 10 100 500 200 15 . MJ802 MJ4502 30 200 100 90 25


    OCR Scan     		PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4Q34 MJ4035 MJ10012 J901 PMD1602K PMD16K100 PMD12K60

    MJ11016

    Abstract: PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100
    Text: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd BVc b o @ lc bvceo (A) NPN PNP BUY69C (W ) MAX 10 00 (V) MIN MIN *TYP (A) MIN (V) MAX (MHZ) (A) MAX 100 500 200 15 2.5 3.3 MJ802 MJ4502 30 200 100 90 25 100 7.5 MJ1000 M J 900 8.0 90 60 60 1,000 . 3.0


    OCR Scan     		PDF buy69c mj802 mj4502 mj1000 mj1001 mj3000 mj2500 mj3001 mj2501 mj4033 MJ11016 PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100

    MJ15024 MJ15025

    Abstract: 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA MJ15003 MJ15004 2N3772 motorola 2N3055H 2N3773 MOTOROLA
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching lcCont VcEO (sus) Am ps Max V oljs Min 15 60 NPN ^FE PNP 2N3055H 2N3055 2N3055A UJ2955 MJ2955A lc (n M in/M ax Amp 20/70 20/70 20/70 4 4 4 ts tf MS


    OCR Scan     		PDF 2N3055H 2N3055 2N3055A MJ2955 MJ2955A MJ15015 MJ15016 MJ15001 MJ15002 MJ11018 MJ15024 MJ15025 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA MJ15003 MJ15004 2N3772 motorola 2N3773 MOTOROLA

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39

    mc7805ck

    Abstract: MC7812Ck MC7815CK TO3 7824 TO-3 package MC7815CK LM7824* steel mc7824CK 7824 To-3 MC7806CK MC7915CK
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


    OCR Scan     		PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 mc7805ck MC7812Ck MC7815CK TO3 7824 TO-3 package MC7815CK LM7824* steel mc7824CK 7824 To-3 MC7806CK MC7915CK

    BU930

    Abstract: bdx86c BDX88b SE9303 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650
    Text: 1989963 CENTRAL SEMICONDUCTOR T i ' deT| 61C -00197^ T-33-29 ‘ oDoon? i j p ~ POWER DARLINGTON TRANSISTORS METAL IC 10A = O PERATING A N D S T O R A G E T E M P E R A T U R E -5 5 ° to + 2 0 0 ° C TYPE NO. VCE(S) @ lc fT Min Mh z Watts Min - Max Amps


    OCR Scan     		PDF T-33-29 TEMPERATURE-55Â 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BDX85 BDX86 BU930 bdx86c BDX88b SE9303

    BUW67

    Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
    Text: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10


    OCR Scan     		PDF T-33-29 TEMPERATURE-55Â 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BDX85 BDX86 BUW67 BDX85C bdx86c

    LM3661TL-1.40

    Abstract: 2N6057
    Text: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713


    OCR Scan     		PDF