TYN 208 equivalent
Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Text: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A
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OCR Scan
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1N2977
N2979
N2980
N2983
N2984
ZC2800E
ZC2810E
ZC2811E
ZC5800E
CQ202-4N-2
TYN 208 equivalent
bt 824 600b
FR207 equivalent
BRX49 equivalent
MZ2361 equivalent
BTA08-600C equivalent
n4468
CS2181
TYN 276
BTA16-600B equivalent
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PDF
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BRX49 equivalent
Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number
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OCR Scan
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1N270
1N276
1N283
1N295
1N457A
1N703A
1N705A
1N746A
1N747A
1N750A
BRX49 equivalent
FR207 equivalent
4835D
TYN 208 equivalent
BDW84C equivalent
BTA16-600B equivalent
BCX38C equivalent
MP 1048 EM
q4003l4
TYN208
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PDF
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BTA08-600C equivalent
Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B
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OCR Scan
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Z0409ME
Z0409MF
Z0409NE
Z0409NF
Z0410BE
Z0410BF
Z0410DE
Z0410DF
Z0410ME
Z0410MF
BTA08-600C equivalent
BTA16-600B equivalent
BDW84C equivalent
TYN 208 equivalent
FR207 equivalent
2N3668
MDA2506
mda 2060
1n5399 equivalent
1N4465
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PDF
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r5609
Abstract: 8E-15 A741 THS4001 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor SLOA029
Text: Application Report SLOA029 - October 1999 THS4001 SPICE Model Performance James Karki ABSTRACT This document outlines the SPICE model of the THS4001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison,
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Original
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SLOA029
THS4001
com/sc/docs/products/analog/ths4001
r5609
8E-15
A741
bf 333 transistor
8E15
BR-049
296E-18
BF100 transistor
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PDF
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OCR Scan
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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PDF
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Untitled
Abstract: No abstract text available
Text: IH 5 1 4 0 - IH 5 1 4 5 IH 5140-IH 5145 S E M I C O N D U C T O R High-Level CMOS Analog Switch GENERAL DESCRIPTION FEATURES T h e IH 5140 Fam ily o f C M OS sw itches utilizes H arris’ latch-tree junction isolated processing to build th e fa ste st sw itches currently available. Th e se sw itche s can b e toggled
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OCR Scan
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5140-IH
IH5140-IH5145
235Hz
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PDF
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FR180
Abstract: BFR180
Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1296
OT-23
FR180
BFR180
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1296
OT-23
D1220b7
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PDF
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AB-194
Abstract: OPA685 THS4011 THS4151 transistor zx series
Text: Signal Conditioning: High-Speed Op Amps Texas Instruments Incorporated Designing for low distortion with high-speed op amps By James L. Karki Member, Group Technical Staff, High-Performance Linear Introduction The output of any amplifier contains the desired signal
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Original
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SLYT133
AB-194
OPA685
THS4011
THS4151
transistor zx series
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR 180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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VPS05161
OT-23
900MHz
Oct-13-1999
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
|
900MHz
Q62702-F1377
OT-143
fiB35b05
fl23SbOS
|
PDF
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Q62702-F1296
Abstract: No abstract text available
Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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Original
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900MHz
OT-23
Q62702-F1296
Feb-04-1997
Q62702-F1296
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PDF
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Q62702-F1377
Abstract: No abstract text available
Text: BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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Original
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900MHz
OT-143
Q62702-F1377
Nov-22-1996
Q62702-F1377
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PDF
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VPS05178
Abstract: No abstract text available
Text: BFP 180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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VPS05178
OT-143
900MHz
Oct-12-1999
VPS05178
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PDF
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|
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to225aa
Abstract: BD678 bd676 BD682 equivalent to225aa case
Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.
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Original
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BD676,
BD676A,
BD678,
BD678A,
BD680,
BD680A,
BD682
BD675,
to225aa
BD678
bd676
BD682 equivalent
to225aa case
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PDF
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START420
Abstract: START420TR Transistor F 0552 BF280 TRANSISTOR C436
Text: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation
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Original
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START420
OT343
OT343
START420
START420TR
500MHz-5GHz
START420TR
Transistor F 0552
BF280
TRANSISTOR C436
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PDF
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PIN diode SPICE model
Abstract: BF100 transistor 8E-15 A741 THS3001 pspice model list transistor
Text: Application Report SLOA038 - October 1999 THS3001 SPICE Model Performance Jim Karki Mixed Signal Products ABSTRACT This application report outlines the SPICE model of the THS3001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison, model listing,
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Original
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SLOA038
THS3001
com/sc/docs/products/analog/THS3001
PIN diode SPICE model
BF100 transistor
8E-15
A741
pspice model list transistor
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PDF
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BFP620F
Abstract: fa 5571 transistor 3884 BFP620F ACs
Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability
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Original
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BFP620F
Aug-09-2001
BFP620F
fa 5571
transistor 3884
BFP620F ACs
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PDF
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transistor k 4213
Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFR340T
VPS05996
EHA07536
Jul-01-2003
transistor k 4213
BFR340T
transitor RF 98
SC75
BFR34* transistor
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PDF
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fa 5571
Abstract: BFP620F transistor 3884
Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability
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Original
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BFP620F
Dec-07-2001
fa 5571
BFP620F
transistor 3884
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PDF
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TRANSISTOR MARKING NK
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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Original
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BFR380T
VPS05996
EHA07524
Feb-18-2003
TRANSISTOR MARKING NK
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PDF
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transistor 1107
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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Original
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BFR380T
VPS05996
EHA07524
Jan-29-2002
transistor 1107
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PDF
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fbs MARKING TRANSISTOR
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFR360T
VPS05996
EHA07524
Jan-28-2003
fbs MARKING TRANSISTOR
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PDF
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IC 7306
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFR360T
VPS05996
EHA07524
Jul-29-2002
IC 7306
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PDF
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