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    ZC2811E Search Results

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    ZC2811E Price and Stock

    Diodes Incorporated ZC2811ETA

    DIODE SCHOTTKY 15V 20MA SOT23-3
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    DigiKey ZC2811ETA Reel
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    Zetex / Diodes Inc ZC2811ETA

    RECTIFIER DIODE,SCHOTTKY,15V V(RRM),SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ZC2811ETA 1,520
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    ZC2811ETA 1,400
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    ZC2811E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC2811E Zetex Semiconductors SOT23 SCHOTTKY BARRIER DIODE Original PDF
    ZC2811E Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC2811E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC2811E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC2811E-E8 Zetex Semiconductors DIODE SCHOTTKY DIODE 15V 0.02A 3SOT-23 Original PDF
    ZC2811ETA Diodes Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 15V 0.02A SOT23-3 Original PDF

    ZC2811E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZC2800E

    Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
    Text: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA


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    PDF ZC2800E ZC2811E ZC5800E ZC2811E) ZC2800E MV SOT23 ZC2811E ZC5800E DSA003721

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL


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    PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E

    BAT54A

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6


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    PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E BAT54A

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    LQM2MPN

    Abstract: LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T
    Text: LTC3526L-2/LTC3526LB-2 550mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN Features Description Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells n V Start-Up Voltage: 680mV IN n 1.5V to 5.25V V OUT Range


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    PDF LTC3526L-2/LTC3526LB-2 550mA 100mA 200mA 680mV LTC3526L-2) LTC3526LB-2) 3526L-2/LTC3526LB-2 LTC3400/LTC3400B 600mA LQM2MPN LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T

    Untitled

    Abstract: No abstract text available
    Text: LTC3526-2/LTC3526B-2 500mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN NOT RECOMMENDED FOR NEW DESIGNS Contact Linear Technology for Potential Replacement FEATURES DESCRIPTION Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells


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    PDF LTC3526-2/LTC3526B-2 500mA 100mA 200mA 850mV LTC3526-2) LTC3526B-2) LTC3400/LTC3400B 600mA LTC3527/LTC3527-1

    how to stepup 0.5v to 5v

    Abstract: No abstract text available
    Text: LTC3525L-3 400mA Micropower Synchronous Step-Up DC/DC Converter with Output Disconnect FEATURES n n n n n n n n n n n n n DESCRIPTION Start-Up at 0.7V Typical, 0.88V Guaranteed Up to 95% Efficiency Output Disconnect and Inrush Current Limit 3V Fixed Output Voltage


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    PDF LTC3525L-3 400mA 160mA 3525L-3 LTC3525 400mA, LTC3526/LTC3526B 500mA 3525lfa how to stepup 0.5v to 5v

    MARKING CFf

    Abstract: 3528 pwm 20 pin LTC3528
    Text: LTC3528/LTC3528B 1A, 1MHz Synchronous Step-Up DC/DC Converters in 3mm x 2mm DFN FEATURES DESCRIPTION Delivers 3.3V at 200mA from a Single Alkaline/ NiMH Cell or 3.3V at 400mA from Two Cells • V Start-Up Voltage: 700mV IN ■ 1.6V to 5.25V V OUT Range ■ Up to 94% Efficiency


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    PDF LTC3528/LTC3528B 200mA 400mA 700mV LTC3528) LTC3528B) 3528/LTC3528B SC-70 LTC3458L MARKING CFf 3528 pwm 20 pin LTC3528

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    SL6609

    Abstract: POCSAG Receiver ds2464 12 volts Voltage Doubler m.Sc part 2nd date sheet Voltage Doubler D019 D020 D021 DO21
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 ADVANCE INFORMATION DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating at 512 or 1200 baud. This device together with a suitable


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    PDF DS2464 MV6639 MV6639 SL6609 POCSAG Receiver 12 volts Voltage Doubler m.Sc part 2nd date sheet Voltage Doubler D019 D020 D021 DO21

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    zc825

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 capac832A zc825 ZC830A ZC831A ZC832A

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES SSUE 2 - MARCH 1995 O DIODE PIN CONNECTION ii PARTM ARKING DETAIL ZC2800E - E6 ZC2811E - E8 ZC5800E - E9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L P o w e r D is s ip a tio n at T amb= 25‘>C P .o t


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    PDF ZC2800E ZC2811E ZC5800E ZC5800E

    zc sot23

    Abstract: ZC2810E
    Text: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT


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    PDF ZC2800E ZC2811E ZC2810E ZC5800E ZC5800E 2800E 2810E zc sot23

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current


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    PDF 7E50533 ZC2800Er ZC2810E ZC2811E ZC5800E ZC2800E

    Untitled

    Abstract: No abstract text available
    Text: 3 7 b f i 522 DD 2 0 1 1 E S 47 H P L S B a i GEC P L E S S E Y FEBRUARY 1994 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating


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    PDF DS2464 MV6639 MV6639

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


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    PDF BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


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    PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    ZC2800

    Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
    Text: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


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    PDF OT-23 ZC2800 ZC2810 10fiA ZC2811 ZC5800 E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E

    Untitled

    Abstract: No abstract text available
    Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZC2812E ZC2813E lplt-20m ZC2811E

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C