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    MMIC AMPLIFIER X-BAND 10W Search Results

    MMIC AMPLIFIER X-BAND 10W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    MMIC AMPLIFIER X-BAND 10W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    FMA3012

    Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
    Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band


    Original     		PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip

    GAAS FET AMPLIFIER x-band 10w

    Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V

    MMIC X-band amplifier

    Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w MA08509D x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
    Text: V 1.00 MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features E E E E 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA08509D MA08509D MMIC X-band amplifier mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier

    P1006

    Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD

    x-band mmic

    Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier
    Text: RO-P-DS-3006 - A- MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features ♦ ♦ ♦ ♦ 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3006 MA08509D MA08509D x-band mmic mmic AMPLIFIER x-band 10w x-band power amplifier

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006

    power transistor gaas x-band

    Abstract: x-band transistor
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 30-Sep-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band x-band transistor

    power transistor gaas x-band

    Abstract: mmic AMPLIFIER x-band 10w
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-Jun-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band mmic AMPLIFIER x-band 10w

    XP1007

    Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
    Text: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-May-05 P1007 MIL-STD-883 XP1007 power transistor mimix x-band x-band power transistor power transistor gaas x-band

    x-band limiter

    Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
    Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w

    x-band limiter

    Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
    Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w

    x-band limiter

    Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
    Text: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech

    5.8 ghz amplifier 10w

    Abstract: No abstract text available
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02 5.8 ghz amplifier 10w

    Untitled

    Abstract: No abstract text available
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    Untitled

    Abstract: No abstract text available
    Text: MGA-333840-02 3.3 – 3.8 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-333840-02 64QAM) 16d/e MGA-333840-02

    Traveling Wave Amplifier

    Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
    Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT


    Original     		PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing

    x-band power transistor

    Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
    Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding


    Original     		PDF

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"