AM011037WM-BM/FM-R
Abstract: amcomusa mmics
Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover
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AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM/FM-R
38dBm)
AM011037WM-BM/FM-R
10mils
1000pF,
50ohms,
10ohms,
amcomusa
mmics
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BGA2022
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Preliminary specification 2000 May 05 Philips Semiconductors Preliminary specification MMIC mixer BGA2022 PINNING FEATURES • Large frequency range: PIN DESCRIPTION – Cellular band 900 MHz
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MBD128
BGA2022
BGA2022
BP317
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CGY2106TS
Abstract: Philips npo 0805 SSOP16 CGY21 CGY2106
Text: INTEGRATED CIRCUITS DATA SHEET CGY2106TS High dynamic range dual LNA MMIC Preliminary specification File under Integrated Circuits, IC17 2000 Aug 28 Philips Semiconductors Preliminary specification High dynamic range dual LNA MMIC CGY2106TS FEATURES GENERAL DESCRIPTION
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CGY2106TS
CGY2106TS
403506/01/pp16
Philips npo 0805
SSOP16
CGY21
CGY2106
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BGA2022
Abstract: AN00059
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION
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MBD128
BGA2022
R77/06/pp9
BGA2022
AN00059
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Decoupling capacitor philips
Abstract: CGY2105 CGY2105ATS DCS1800 PCS1900 SSOP16
Text: INTEGRATED CIRCUITS DATA SHEET CGY2105ATS High dynamic range dual LNA MMIC Product specification Supersedes data of 1999 December 23 File under Integrated Circuits, IC17 2000 Nov 22 Philips Semiconductors Product specification High dynamic range dual LNA MMIC
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CGY2105ATS
CGY2105
403506/02/pp16
Decoupling capacitor philips
CGY2105ATS
DCS1800
PCS1900
SSOP16
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MARKING 5F SOT363
Abstract: BGA2022 AN00059
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION
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MBD128
BGA2022
613516/06/pp8
MARKING 5F SOT363
BGA2022
AN00059
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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CMPA5585025F
Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
power transistor gaas x-band
CMPA5585025F-TB
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CMPA2060025D
Abstract: No abstract text available
Text: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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CMPA2560025F
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
CMPA2560025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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x-Band Hemt Amplifier
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
x-Band Hemt Amplifier
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GRM36
Abstract: HK1005 HK1608 NJG1714KC1 mix 3001
Text: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.
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NJG1714KC1
NJG1714KC1
NJG1714KC1.
FLP10
FLP10-C1
1900MHz
GRM36
HK1005
HK1608
mix 3001
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION – Cellular band 900 MHz
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MBD128
BGA2022
R77/06/pp9
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diode p4b
Abstract: NJG1663K44
Text: NJG1663K44 X-SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1663K44 is a X Cross -SP4T* switch GaAs MMIC, which is suitable for switching of balanced bandpass filters. The NJG1663K44 features very low phase error between on-state paths, low insertion loss,
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NJG1663K44
NJG1663K44
QFN16-44
diode p4b
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GRM39
Abstract: CRG16G HK1608 NJG1551F Murata GRM39
Text: NJG1551F 800MHz BAND MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1551F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. NJG1551F includes a mixer and a local amplifier, and ideally suitable for 800MHz band digital mobile
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NJG1551F
800MHz
NJG1551F
820MHz,
-10dBm,
-30dBm
12dBm
GRM39
CRG16G
HK1608
Murata GRM39
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GRM36
Abstract: HK1005 HK1608 NJG1714KC1
Text: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.
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NJG1714KC1
NJG1714KC1
NJG1714KC1.
FLP10
FLP10-C1
1900MHz
GRM36
HK1005
HK1608
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CRG16G
Abstract: GRM39 HK1608 NJG1551F Murata GRM39
Text: NJG1551F 800MHz BAND MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1551F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. NJG1551F includes a mixer and a local amplifier, and ideally suitable for 800MHz band digital mobile
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NJG1551F
800MHz
NJG1551F
820MHz,
-10dBm,
-30dBm
12dBm
CRG16G
GRM39
HK1608
Murata GRM39
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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HP8566B
Abstract: signal generator 1900 mhz HP8665B HPMX-5001 HPMX5001 T4-1-X65
Text: HPMX-5001 Demonstration Circuit Board Application Brief 102 Introduction The circuit board described is designed for use with the HPMX-5001 up/down converter MMIC. It allows testing the MMIC for 1900 MHz applications such as DECT, and 2.4 GHz applications
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HPMX-5001
HP8665B
4/95mt
HP8566B
5964-3929E
signal generator 1900 mhz
HPMX5001
T4-1-X65
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FFP16
Abstract: FFP16-C1 GRM36 HK1005 NJG1312PC1
Text: NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted.
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NJG1312PC1
NJG1312PC1
800MHz
900MHz
10dBm
FFP16-C1
FFP16
FFP16-C1
GRM36
HK1005
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Untitled
Abstract: No abstract text available
Text: NJG1663K44 X-SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1663K44 is a X Cross -SP4T* switch GaAs MMIC, which is suitable for switching of balanced bandpass filters. The NJG1663K44 features very low phase error between on-state paths, low insertion loss,
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NJG1663K44
NJG1663K44
QFN16-44
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