solder paste alpha WS609
Abstract: WS609 TSSOP YAMAICHI SOCKET Alpha WS609 Yamaichi Electronics ic51-0142 cc fuji CM92 DELL PWB mutual capacitance touch screens 2000 MO-193
Text: TVSOP Application Brief August 1996 draft 1.2 SCBA009A List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete
|
Original
|
SCBA009A
MO-193
IC51-0142-2074-MF
IC51-0162-2073-MF
IC51-0202-2072-MF
IC51-0242-2071-MF
IC51-0482-2069-MF
IC51-0562-2067-MF
IC51-0802-2077-MF
IC51-1002-2076-MF
solder paste alpha WS609
WS609
TSSOP YAMAICHI SOCKET
Alpha WS609
Yamaichi Electronics ic51-0142
cc fuji
CM92
DELL PWB
mutual capacitance touch screens 2000
|
PDF
|
Alpha WS609
Abstract: Yamaichi TQFP 244 MO-194AA MO-193 MO-194 tssop 16 exposed pad stencil Alpha WS609 solder TSSOP YAMAICHI SOCKET MO-194AC SN74LVC16xxx
Text: TVSOP Application Brief December 1996 SCBA009B List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Draft 1.3 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete
|
Original
|
SCBA009B
MO-193
IC51-0142-2074-MF
IC51-0162-2073-MF
IC51-0202-2072-MF
IC51-0242-2071-MF
IC51-0482-2069-MF
IC51-0562-2067-MF
IC51-0802-2077-MF
IC51-1002-2076-MF
Alpha WS609
Yamaichi TQFP 244
MO-194AA
MO-194
tssop 16 exposed pad stencil
Alpha WS609 solder
TSSOP YAMAICHI SOCKET
MO-194AC
SN74LVC16xxx
|
PDF
|
B4-0503SS
Abstract: B4-0505SS B4-0512SS B4-1203SS B4-1205SS B4-1209SS B4-1212SS B4-2403SS 1209SS LF
Text: B4 LF - Series 0.6 to 1.5 Watt Isolated DC-DC Converter Single Regulated Output 1 . Features λ 7 Pin SIL / 14 Pin DIL Package λ Low Ripple and Noise λ Input / Output Isolation 1K Vdc or 3K Vdc λ 100% Burn-In λ Input Filter with Internal Capacitor λ Custom Design Available
|
Original
|
Spec-061003
B4-0503SS
B4-0505SS
B4-0512SS
B4-1203SS
B4-1205SS
B4-1209SS
B4-1212SS
B4-2403SS
1209SS LF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V
|
Original
|
LTC2051/LTC2052
30nV/Â
MS8/GN16
140dB
130dB
LTC2051/LTC2052,
LTC1152
LTC2050
OT-23
|
PDF
|
LTC2051
Abstract: LTC2051HV LTC2052 S14 MSOP
Text: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V
|
Original
|
LTC2051/LTC2052
MS8/GN16
140dB
130dB
LTC2051/LTC2052,
drif15V
LTC1152
LTC2050
OT-23
LTC2051
LTC2051HV
LTC2052
S14 MSOP
|
PDF
|
051hvh
Abstract: LTC2051HVCDD LTC2052HVHS LTC2051 LTC2051HV LTC2052 LTC2051HVIMS10
Text: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V
|
Original
|
LTC2051/LTC2052
MS8/GN16
140dB
130dB
LTC2051/LTC2052,
drif51
LTC1152
LTC2050
OT-23
051hvh
LTC2051HVCDD
LTC2052HVHS
LTC2051
LTC2051HV
LTC2052
LTC2051HVIMS10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
|
OCR Scan
|
IXGH28N30
IXGH28N30S
TQ-247
28N30S)
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C
|
OCR Scan
|
IXGH20N30
IXGH20N30S
TQ-247
20N30S)
O-247
|
PDF
|
X24C16
Abstract: X4163
Text: Recommended System Management Alternative: X4163 X24C16 16K 2048 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply • Low power CMOS —Active read current less than 1 mA —Active write current less than 3 mA —Standby current less than 1µA
|
Original
|
X4163
X24C16
--14-lead
X24C16
X4163
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET HiPerFAST IGBT IXGH40N30A IXGH40N30AS V C ES ^C25 V C E sat t. = 300 V = 60 A = 2.1 V = 120 ns TO -247 SMD (40N 30A S ) T, = 25°C to 150°C; RGE = 1 MO 300 Continuous ±20 Transient ±30 T c = 25 °C 60 T c = 90 °C 40 I, T SSOA
|
OCR Scan
|
IXGH40N30A
IXGH40N30AS
|
PDF
|
28N30B
Abstract: No abstract text available
Text: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90
|
OCR Scan
|
28N30B
28N30B
O-247
O-268
O-268
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O IX Y S PRELIMINARY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
|
OCR Scan
|
IXGH28N30B
IXGH28N30BS
O-247
28N30BS)
|
PDF
|
ixys ml 075
Abstract: TXYS aj 312
Text: HiPerFET Power MOSFETs IXFH26N50Q IXFT26N50Q VD S S ^D25 trr <250 ns N-Channel Enhancement Mode AvalancheRated Low Qg,High dv/dt vDSS VDGR Vss vGSM Test Conditions Maxim um R atings Tj = 25°C to 150°C 500 V TJ = 25°C to 150°C; RGS= 1 MO 500 V Continuous
|
OCR Scan
|
IXFH26N50Q
IXFT26N50Q
O-24T
O-268
ixys ml 075
TXYS
aj 312
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C
|
OCR Scan
|
IXGH28N30A
IXGH28N30AS
O-247
28N30AS)
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous
|
OCR Scan
|
IXGH22N50BU1
IXGH22N50BU1S
O-247SMD*
O-247
|
PDF
|
40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
|
OCR Scan
|
IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
|
PDF
|
13n10
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS
|
OCR Scan
|
IXFT10N100
IXFT12N100
IXFT13N100
10N100
12N100
13N100
13n10
|
PDF
|
D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
|
OCR Scan
|
12N100U1
12N100AU1
24SBSC
T0-247
D 819
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST72324Bxx 8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI Features Memories • 8 to 32 Kbyte dual voltage High Density Flash HDFlash or ROM with readout protection capability. In-application programming and Incircuit programming for HDFlash devices
|
Original
|
ST72324Bxx
10-bit
LQFP32
LQFP44
|
PDF
|
use with ipa pc5 pe 2030
Abstract: LQFP32 LQFP44 SDIP32 SDIP42 ST72324BJ2 ST72324BJ4 ST72324BJ6 ST72324BK2 ST72324BK4
Text: ST72324Bxx 8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI Features Memories • 8 to 32 Kbyte dual voltage High Density Flash HDFlash or ROM with readout protection capability. In-application programming and Incircuit programming for HDFlash devices
|
Original
|
ST72324Bxx
10-bit
LQFP44
SDIP32
SDIP42
use with ipa pc5 pe 2030
LQFP32
LQFP44
SDIP32
SDIP42
ST72324BJ2
ST72324BJ4
ST72324BJ6
ST72324BK2
ST72324BK4
|
PDF
|
30N30
Abstract: 96542B
Text: HiPerFAST IGBT IXGH30N30 IXGH30N30S vCES *C25 VCE sat 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions VCES Tj = 25°Cto150°C 300 V vCGR ^ = 25°Cto150°C; RGE = 1 MO 300 V vGES Continuous ±20 V VGEM Transient ±30 V 60 A 30 A 120 A Maximum Ratings
|
OCR Scan
|
IXGH30N30
IXGH30N30S
Cto150
O-247
30N30
96542B
|
PDF
|
32n50
Abstract: No abstract text available
Text: DIXYS HiPerFET Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family VDSS ^D25 500 V 500 V 30 A 32 A D DS on 0.16 Q 0.15 £2 trr <250 ns Preliminary data Symbol v DOR v r . VGSM Test Conditions Tj= 25° C to 150° C
|
OCR Scan
|
30N50
32N50
32N50
O-247AD
O-268
|
PDF
|
GV1 M10
Abstract: TPC842 A7 B14
Text: tlX IU N X XC5200 Field Programmable Gate Arrays August 6,1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
|
OCR Scan
|
XC5200
-403C
XC5202
XC5204
XC5206
XC5210
XC5215
PQ100
VQ100
TQ144
GV1 M10
TPC842
A7 B14
|
PDF
|
JRC 2100
Abstract: infrared transmitter for pir 325 CSTCE8M00G55A 500Khz ceramic smd resonator ic1 ne555 electronic watchdog using ic1 ne555 JRC 2100 8 pin 5 VOLT buzzer DATASHEET PIR SENSOR stabilization ne555 SMD
Text: ST72321Rx ST72321ARx ST72321Jx 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and
|
Original
|
ST72321Rx
ST72321ARx
ST72321Jx
64/44-pin
JRC 2100
infrared transmitter for pir 325
CSTCE8M00G55A
500Khz ceramic smd resonator
ic1 ne555
electronic watchdog using ic1 ne555
JRC 2100 8 pin
5 VOLT buzzer DATASHEET
PIR SENSOR stabilization
ne555 SMD
|
PDF
|
