BNC-50
Abstract: ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510
Text: Index Model No. Model Number - Page Number Page No. Model No. Page No. Model No. Page No. Model No. Page No. 222 222 222 222 8503812SP-6 . 8503812SP7 . 85071ZSGA . 85071ZSGB . 85072ZSGA .
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8503812SP-6
8503812SP7
85071ZSGA
85071ZSGB
85072ZSGA
85072ZSGB
ADT-2584-NM-TNM-02
ADT-2585-NM-TNF-02
ADT-2586-NF-TNM-02
ADT-2587-NF-TNF-02
BNC-50
ssm-5210
RFM70
ADT-2590-FF-NNN-02
TRM-2445-F0-SMA-02
dcb-3510
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Voltage Controlled Oscillator ROS-EDR5775 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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CK605
ROS-EDR5775
ROS-EDR5775
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Voltage Controlled Oscillator ROS-ED9941/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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CK605
ROS-ED9941/1
ROS-ED9941/1
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer MCA-ED12749/1 Level 18 LO Power +18 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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MCA-ED12749/1
DZ883
MCA-ED12749/1
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer AMCY-ED11506A/1 Level 2 LO Power +2 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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AMCY-ED11506A/1
BJ293
AMCY-ED11506A/1
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer AMCY-ED12641/1 Level 2 LO Power +2 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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AMCY-ED12641/1
BJ293
AMCY-ED12641/1
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Power Splitter/Combiner ZB4PD-ED10955/1 4 Way-0° Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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ZB4PD-ED10955/1
UU188
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer MACY-ED12692 Level 0 LO Power 0 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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MACY-ED12692
BJ293
MACY-ED12692
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer AMCY-ED12681 Level 0 LO Power 0 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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AMCY-ED12681
BJ293
AMCY-ED12681
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d2352
Abstract: No abstract text available
Text: Pomona Model 2352 Solder Turret Terminal Screw MATERIAL: Carbon steel 1018 RATINGS: Operating Voltage: Hand-held testing: 30VAC/60VDC Max. Hands free testing in controlled voltage environments: 2500 WVDC Max. Current: 15 Amperes ORDERING INFORMATION: Model 2352
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30VAC/60VDC
\Release\DataSheets\FlukeDataSheet\d2352
90tage:
d2352
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ds70030
Abstract: DS70030A fb-cl
Text: Table of Contents PAGE SECTION 1. PROGRAMMER’S MODEL 1-1 dsPIC30F Overview . 1-2 Programmer’s Model . 1-3
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dsPIC30F
DS70030A-page
ds70030
DS70030A
fb-cl
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baysilone M5
Abstract: DC200 silicone oil NACE ISO S26RE 266DDH ball valve PN 16 S26FA S26WA S26RA foundation fieldbus transmitter
Text: Data Sheet DS/266XDH-EN Model 266DDH Differential Model 266HDH Gauge Model 266NDH Absolute 2600T Series Pressure Transmitters Engineered solutions for all applications Base accuracy from 0.06 % of calibrated span Reliable sensing system coupled with very latest digital
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DS/266XDH-EN
266DDH
266HDH
266NDH
2600T
C-276
C-2000
DC200
DC704
DS/266XDH-EN
baysilone M5
DC200 silicone oil
NACE ISO
S26RE
ball valve PN 16
S26FA
S26WA
S26RA
foundation fieldbus transmitter
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SUB75N04-05L
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75N04-05L Vishay Siliconix N-Channel Enhancement-Mode Transistors, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application
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SUP/SUB75N04-05L
19-Jan-98
SUB75N04-05L
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SiR176DP
Abstract: 65510
Text: SPICE Device Model SiR176DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR176DP
18-Jul-08
65510
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ720DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ720DT
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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SPICE
Abstract: models
Text: SPICE MODELS SPICE Model – xx336RAA This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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xx336RAA
01E-04
20E-04
34E-04
40E-04
56E-04
52E-04
72E-04
23E-04
75E-04
SPICE
models
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SPICE
Abstract: models 0805CS
Text: Document 158 SPICE Model – 0805CS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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0805CS
01E-04
20E-04
34E-04
40E-04
56E-04
52E-04
72E-04
23E-04
75E-04
SPICE
models
0805CS
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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Si2304DDS
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7469DP www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7469DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR846ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR846ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si2304DDS
Abstract: No abstract text available
Text: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si2304DDS
18-Jul-08
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TRM-2001
Abstract: ssm-5210
Text: Index Model No. Model Number - Page Number Page No. Model No. Page No. Model No. Page No. Model No. Page No. 8503812FP-3 . 275 8503812 FP-4 . 275 8503812FP-5 . 275 8503812SP-6 . 275 8503812S P -7.275
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8503812FP-3
8503812FP-5
8503812SP-6
8503812S
85071ZSGA
ADT-2580-NM-SMM-02
ADT-2581-NM-SMF-02
ADT-2582-N
F-SMM-02
ADT-2583-NF-SMF-02
TRM-2001
ssm-5210
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STR W 6856
Abstract: str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02
Text: Model Number - Page Number le No. Model No. Page No. Model No. Page No. Model No. Page No. 8503812SP-6 . 8503812 S P 7 . 85071ZSGA . 85071ZSGB . 85072ZSGA . 85072ZSGB .
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8503812SP-6
85071ZSGA
85071ZSGB
85072ZSGA
85072ZSGB
85073ZSGA.
85073ZSGB
85074ZSGA
85074ZSGB
8604412SP-1
STR W 6856
str 6856
DCB-3525-IO-NNN-02
SMA-5582-35-HRM-02
EQL-4431-24-NEG-79
HYB-5411-X3-SMA-79
442-612
ADT-2597-MM-TNC-02
A799
TRM-2120-MC-HNO-02
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