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    SiR176DP

    Abstract: 65510
    Text: SPICE Device Model SiR176DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR176DP 18-Jul-08 65510

    SiR176DP

    Abstract: 4558 9721 AN609 47559
    Text: SiR176DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR176DP AN609, 11-Jan-10 4558 9721 AN609 47559