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    MOSFET 09N70GP Search Results

    MOSFET 09N70GP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 09N70GP Datasheets Context Search

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    09N70P-A

    Abstract: 09N70P SSM09N70GP-A 09n70 09N70GP-A mosfet 09n70gp marking codes transistors SSs VDS25V
    Text: SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS ON 0.75Ω ID 9A DESCRIPTION The SSM09N70GP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC


    Original     		SSM09N70GP-A SSM09N70GP-A O-220 O-220 09N70P-A 09N70P 09n70 09N70GP-A mosfet 09n70gp marking codes transistors SSs VDS25V PDF