YTFP451
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:
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YTFP451
500nA
250uA
Ta-25
-55M50
VDS-25V,
ID-16A
VGS-10V
IDR-13A
YTFP451
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D 4Û 5 S 4S 2 O O l b E C n 4TT • INR Bulletin E2793 International [îôrIRectifier IRFK2P350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration ■ • • • High Current Capability. UL recognised E78996.
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E2793
IRFK2P350
IRFK2F350
E78996.
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APT801R2cN
Abstract: C 632 S1M
Text: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q
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Q0GQ777
APT801R2CN
APT751R2CN
APT801R4CN
APT751R4CN
751R2CN
801R2CN
751R4GCN
801R4CN
g-100
C 632 S1M
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Untitled
Abstract: No abstract text available
Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q
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APT1004RCN
APT904RCN
APT1004R2CN
APT904R2CN
904RCN
1004RCN
904R2CN
1004R2CN
APT1004R/1
004R2GN
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nK2647
Abstract: T151 2sk2647 N CH FET 600V 9A
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P o w e r M O S F E T 2 SK 2 6 4 T - 0 1M R SPEC. No. Fuj i E l e c t r i c . Co., Ltd. This Specification is subject to change without notice. OATE DRAWN NAME APPROVED Fuji Electric C o jid CHECKED 12 Y 025T-R-004a
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0257-R-004a
2SK2647-0
T0-22QF
EaTl30
nK2647
T151
2sk2647
N CH FET 600V 9A
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IC A244
Abstract: 2SK950 schematic UPS ica
Text: 2SK950 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications Gate Drain Source • Switching regulators
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2SK950
O-22QAB
SC-46
Tc-25Â
IC A244
2SK950
schematic UPS ica
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PDF
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2SK2834-01
Abstract: No abstract text available
Text: This material and the Information herein It ihe property of Fuji Eltctnc Co .Lid.They shall be neither reproduced, copied, leni. or disclosed in any way whatsoever lor ihe use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.
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2SK2834-01
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2SK2469-01MR
Abstract: No abstract text available
Text: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET
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300V/5A/1
2SK2469-01MR
ls30EJ
2SK2469-01MR
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2n2709
Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
2n2709
C621
2N4411
c643
OC44
400M
BSV55AP
BSV55P
T072
GM300
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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TCH7550
YTFP451
-450V
250ijA
VDS-25V,
VGS-10V
Ta-25Â
IDR-13A
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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YTFP453
IDSS-250u
VDS-450V
I0-25O
H360V
VGS-10V
Ta-25Â
IDR-12A
dlQR/dt-100A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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001L7t
100nA
IDSS-300/
S-900V
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PDF
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YTFP452
Abstract: No abstract text available
Text: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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0017Tflb
YTFP452
IDSS-250uA
VDS-500V
Ijj-250uA
Te-25Â
RGSm20kfi)
Vddn210V
VGS-10V
Ta-25<
YTFP452
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC \ SFNF065D 70 DË^Û3t,ôbDE □ □□nflfc, 2 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS *0 IDM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 50 V Drain Current, Continuous @ Tc=25°C 4.0 A
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SFNF065D
5M6-24UNF-2A
P06fTKM
eA03AT
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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18200T
Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
18200T
germanium low power 150mW
460MSA
2N2097A
C621
LM 18200T
P1004
RT1116
2SC814
transistor C633
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GM300
Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
GM300
CM602
ft06
transistor C633
FSP400
2n1763
C621
DA402
2N2458
transistor c640 npn
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PDF
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2SK2806-01
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01
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2SK2806-01
0257-fi-004a
To-220
0257-R-003a
0257-R-003a
2SK2806-01
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Untitled
Abstract: No abstract text available
Text: X S P E C I F I C A T I O N TE N TA T DEV ICE NAME : TYPE NAME : I VE P o w e r M O S F E T 2 S K 2 7 6 0- Q 1 R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROV ED Fuji Electric Co^Lid. CHECKED
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2SK2760-01R
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diode RU3
Abstract: characteristic of diode zl 100
Text: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .
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MS5F30S2
2SK2W4-01
H04-004-03
S3IM3ai3H13
MS5F2052
ho4-c04-03
SDINCKJ103T3
diode RU3
characteristic of diode zl 100
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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PDF
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2SK2654-01
Abstract: T151
Text: V S P E C 1 F 1 C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : P o w e r M O S F E T 2 SK 2 6 5 4— 0 1 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co^Ltd CHECKED Zt Y 0257-R-004a
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0257-R-004a
2SK2654-0
2SK2654-01
T151
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PDF
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100AH
Abstract: 2SK27 SC-65
Text: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : Po w e r M O S F E T 2 S K 2 7 6 3 - Q 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJJcL CHECKED I DWG.N0. DRAWN
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2SK2763-01
0257-R-004a
100AH
2SK27
SC-65
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ZVN4306A
Abstract: so25
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - M ARCH 94_ FEATURES * 100 Volt v DS * R DS!on = 1 -5 Q * Spice model available ABSOLUTE MAXIMUM RATINGS. SYMBOL > VALUE CO o PARAMETER Drain-Source Voltage Continuous Drain Current at Tamtp25°C
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Tamtp25Â
Tamy-25Â
CurrG8-10V
-SO-25
ZVN4306A
so25
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