APT1004RCN Search Results

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Microchip Technology Inc APT1004RCN Mosfet _ CUSTOM, Projected EOL: 2049-02-05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APT1004RCN			52 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now

APT1004RCN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT1004RCN		Advanced Power Technology	POWER MOS IV 1000V 3.6A 4.00 Ohm		Original	PDF

APT1004RCN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage	Original	PDF	O-254 APT1004RCN O-254AA
TO-254 Abstract: TO-254AA TO-254AA Package Text: APT1004RCN 20 10,000 5 1mS 1 10mS 0.5 TC =+25°C TJ =+150°C SINGLE PULSE VGS, GATE-TO-SOURCE VOLTAGE VOLTS Coss 100 Crss DC 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I = I [Cont.] D D 16 VDS=100V	Original	PDF	APT1004RCN 100mS O-254AA TO-254 TO-254AA TO-254AA Package
BAT 545 Abstract: No abstract text available Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage	Original	PDF	O-254 APT1004RCN APT1004RCN O-254AA BAT 545
Untitled Abstract: No abstract text available Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage	Original	PDF	O-254 APT1004RCN O-254AA
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Untitled Abstract: No abstract text available Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q	OCR Scan	PDF	APT1004RCN APT904RCN APT1004R2CN APT904R2CN 904RCN 1004RCN 904R2CN 1004R2CN APT1004R/1 004R2GN
Untitled Abstract: No abstract text available Text: A d va n ced P o w er Te c h n o l o g y APT1004RCN 1000V 3.6A 4.00Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: T = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts	OCR Scan	PDF	APT1004RCN APT1004RCN O-254AA
APT1004RGN Abstract: No abstract text available Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750	OCR Scan	PDF	APT5011AFN APT40M 80AFN APT1004RGN