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    APT1004RCN Price and Stock

    Microchip Technology Inc APT1004RCN

    Mosfet _ CUSTOM, Projected EOL: 2049-02-05
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    Microchip Technology Inc APT1004RCN 52 Weeks
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    APT1004RCN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1004RCN Advanced Power Technology POWER MOS IV 1000V 3.6A 4.00 Ohm Original PDF

    APT1004RCN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage


    Original
    PDF O-254 APT1004RCN O-254AA

    TO-254

    Abstract: TO-254AA TO-254AA Package
    Text: APT1004RCN 20 10,000 5 1mS 1 10mS 0.5 TC =+25°C TJ =+150°C SINGLE PULSE VGS, GATE-TO-SOURCE VOLTAGE VOLTS Coss 100 Crss DC 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I = I [Cont.] D D 16 VDS=100V


    Original
    PDF APT1004RCN 100mS O-254AA TO-254 TO-254AA TO-254AA Package

    BAT 545

    Abstract: No abstract text available
    Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage


    Original
    PDF O-254 APT1004RCN APT1004RCN O-254AA BAT 545

    Untitled

    Abstract: No abstract text available
    Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage


    Original
    PDF O-254 APT1004RCN O-254AA

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q


    OCR Scan
    PDF APT1004RCN APT904RCN APT1004R2CN APT904R2CN 904RCN 1004RCN 904R2CN 1004R2CN APT1004R/1 004R2GN

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y APT1004RCN 1000V 3.6A 4.00Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: T = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts


    OCR Scan
    PDF APT1004RCN APT1004RCN O-254AA

    APT1004RGN

    Abstract: No abstract text available
    Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750


    OCR Scan
    PDF APT5011AFN APT40M 80AFN APT1004RGN