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    MOSFET 30A 1200V Search Results

    MOSFET 30A 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 30A 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A PDF

    IXFN30N120P

    Abstract: diode 1200v 30A 30N120P
    Text: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90H12SCTG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies


    Original     		APTC90H12SCTG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90H12SCTG VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90H12SCTG PDF

    Ir 900v 60a

    Abstract: APT0406 APT0501 APT0502
    Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90H12SCTG Ir 900v 60a APT0406 APT0501 APT0502 PDF

    MOSFET 1200v 30a

    Abstract: No abstract text available
    Text: APT12040L2LL 1200V 30A 0.400Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT12040L2LL O-264 MOSFET 1200v 30a PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12040L2LL 1200V 30A 0.400Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT12040L2LL O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DDA12CT1G Dual boost chopper Super Junction MOSFET SiC chopper diode VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • •


    Original     		APTC90DDA12CT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90VDA12T1G Dual boost chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC


    Original     		APTC90VDA12T1G PDF

    APT0406

    Abstract: APT0502
    Text: APTC90VDA12T1G Dual boost chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC


    Original     		APTC90VDA12T1G APT0406 APT0502 PDF

    APT0406

    Abstract: APT0502
    Text: APTC90DDA12T1G Dual boost chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • •


    Original     		APTC90DDA12T1G APT0406 APT0502 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DDA12T1G Dual boost chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • •


    Original     		APTC90DDA12T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DDA12T1G Dual boost chopper Super Junction MOSFET VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction Features   


    Original     		APTC90DDA12T1G PDF

    APT0406

    Abstract: APT0502 MOSFET 400V 26a QC C 05
    Text: APTC90DSK12CT1G Dual buck chopper Super Junction MOSFET SiC chopper diode VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery


    Original     		APTC90DSK12CT1G APT0406 APT0502 MOSFET 400V 26a QC C 05 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DSK12CT1G Dual buck chopper Super Junction MOSFET SiC chopper diode VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery


    Original     		APTC90DSK12CT1G frequen100 PDF

    nf950

    Abstract: ixFB30N120P 30N120 30N120P
    Text: IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D PDF

    APT12031JLL

    Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
    Text: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		APT12031JLL OT-227 APT12031JLL mosfet 600V 30A MOSFET 1200v 30a APT30DF120 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DSK12T1G Dual Buck chopper Super Junction MOSFET VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control  Switched Mode Power Supplies Features     - Ultra low RDSon - Low Miller capacitance


    Original     		APTC90DSK12T1G PDF

    APT12031

    Abstract: No abstract text available
    Text: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		APT12031JLL OT-227 APT12031 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90DSK12T1G Dual Buck chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies Features • • • • - Ultra low RDSon - Low Miller capacitance


    Original     		APTC90DSK12T1G PDF

    APT0406

    Abstract: APT0502
    Text: APTC90DSK12T1G Dual Buck chopper Super Junction MOSFET VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Power Module Application • AC and DC motor control • Switched Mode Power Supplies Features • • • • - Ultra low RDSon - Low Miller capacitance


    Original     		APTC90DSK12T1G APT0406 APT0502 PDF