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    MOSFET 40A 100V Search Results

    MOSFET 40A 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 40A 100V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		IRFP150 sil 5102 IRFP150 TB334 PDF

    irfp150

    Abstract: No abstract text available
    Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,


    Original     		IRFP15 IRFP150 irfp150 PDF

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150 PDF

    P35NF10

    Abstract: B35NF10
    Text: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested


    Original     		STB35NF10 STP35NF10 D2PAK/TO-220 O-220 P35NF10 B35NF10 PDF

    P35NF10

    Abstract: B35NF10 p35nf STP35NF10 JESD97 STB35NF10 STB35NF10T4 B35NF TO220
    Text: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested


    Original     		STB35NF10 STP35NF10 D2PAK/TO-220 O-220 P35NF10 B35NF10 p35nf STP35NF10 JESD97 STB35NF10 STB35NF10T4 B35NF TO220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDPF085N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDPF085N10A FDPF085N10A PDF

    sil 5102

    Abstract: 150N IRFP150 TB334 PO40A
    Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N


    Original     		IRFP15 sil 5102 150N IRFP150 TB334 PO40A PDF

    40NF20

    Abstract: STMicroelectronics 40nf20 STB40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 STB40NF20 STP40NF20 O-220 40NF20 STMicroelectronics 40nf20 PDF

    L6PR

    Abstract: P40N20 STF40N20 STB40N20 STP40N20 STP40N20FP STW40N20
    Text: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP


    Original     		STP40N20 STF40N20 STB40N20 STW40N20 D2PAK/TO-220/TO-220FP/TO-247 STB40N20 STP40N20 STP40N20FP O-220 L6PR P40N20 STF40N20 STP40N20FP STW40N20 PDF

    40NF20

    Abstract: STMicroelectronics 40nf20 mosfet 40a 200v STP40NF20 st 393 STB40NF20 STF40NF20 STW40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 STB40NF20 STP40NF20 O-220 40NF20 STMicroelectronics 40nf20 mosfet 40a 200v st 393 STF40NF20 STW40NF20 PDF

    40NF20

    Abstract: STMicroelectronics 40nf20 STP40NF20 STB40NF20 S1217 STW40NF20 STF40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 O-220 40NF20 STMicroelectronics 40nf20 S1217 STW40NF20 PDF

    P40N20

    Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
    Text: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP


    Original     		STP40N20 STF40N20 STB40N20 STW40N20 D2PAK/TO-220/TO-220FP/TO-247 STB40N20 STP40N20 STP40N20FP O-220 P40N20 STF40N20 STP40N20FP STW40N20 PDF

    P40NF10L

    Abstract: p40nf10 p40nf JESD97 STP40NF10L
    Text: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STP40NF10L O-220 P40NF10L p40nf10 p40nf JESD97 STP40NF10L PDF

    B40NF

    Abstract: B40NF10 B40NF10L
    Text: STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB40NF10L B40NF B40NF10 B40NF10L PDF

    p40nf10

    Abstract: P40NF10L STP40NF10L
    Text: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STP40NF10L O-220 O-220 p40nf10 P40NF10L STP40NF10L PDF

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET PDF

    frk150

    Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD frk150 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRK150D, FRK150R, FRK150H 055S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE PDF

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R PDF

    Untitled

    Abstract: No abstract text available
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    2E12

    Abstract: FRK150D FRK150H FRK150R
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK150D FRK150H FRK150R PDF