Untitled
Abstract: No abstract text available
Text: MOSFET 50A 500V 1 PDM505HC
|
Original
|
PDM505HC
|
PDF
|
55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
|
Original
|
55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
|
PDF
|
ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
|
Original
|
55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
|
PDF
|
ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
|
Original
|
55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET 50A 500V 1 PDM505HA P2HM505HA
|
Original
|
PDM505HA
P2HM505HA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET 50A 450 500V 1 PD7M441H P2H7M441H PD7M440H
|
Original
|
PD7M441H
P2H7M441H
PD7M440H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET 50A 450 500V 1 PD7M441L P2H7M441L PD7M440L
|
Original
|
PD7M441L
P2H7M441L
PD7M440L
|
PDF
|
isotop mosfet 100V
Abstract: STE53NM50
Text: STE53NM50 N-CHANNEL 500V - 0.08Ω - 50A ISOTOP MDmesh Power MOSFET PRELIMINARY DATA TYPE STE53NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 50 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
|
Original
|
STE53NM50
isotop mosfet 100V
STE53NM50
|
PDF
|
ultrasound transducer high power driver
Abstract: ultrasound transducer circuit driver 4973 DRF1202 schmitt trigger non inverting DRF12XX
Text: DRF1202 PRELIMINARY 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased
|
Original
|
DRF1202
30MHz
DRF1202
ultrasound transducer high power driver
ultrasound transducer circuit driver
4973
schmitt trigger non inverting
DRF12XX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
|
Original
|
F5N50
F5N50
QW-R502-A90
|
PDF
|
IRF820
Abstract: No abstract text available
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220
|
Original
|
IRF820
O-220
O-220
IRF820
|
PDF
|
IRF820
Abstract: JESD97 IRF8204
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c
|
Original
|
IRF820
O-220
IRF820
JESD97
IRF8204
|
PDF
|
DL2M100N5
Abstract: dawin
Text: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
|
Original
|
DL2M100N5
250nC
DL2M100N5
dawin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N50 Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
O-220F1
O-220
QW-R502-546
|
PDF
|
|
|
61N50
Abstract: 58N50 D-68623 92810G
Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20
|
Original
|
58N50
61N50
58N50
61N50
OT-227
D-68623
92810G
|
PDF
|
DRF1202
Abstract: DRF12XX
Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
|
Original
|
DRF1202
30MHz
DRF1202
CF1202.
DRF12XX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
|
Original
|
DRF1202
30MHz
DRF1202
15MHz
AcousG188.
DRF1202.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
|
Original
|
DRF1202
30MHz
DRF1202
15MHz
AcousG188.
DRF1202.
|
PDF
|
ultrasound transducer circuit driver
Abstract: DRF1202 DRF12XX
Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
|
Original
|
DRF1202
30MHz
DRF1202
15MHz
DRF1202.
ultrasound transducer circuit driver
DRF12XX
|
PDF
|
DRF1202
Abstract: No abstract text available
Text: DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
|
Original
|
DRF1202
30MHz
DRF1202
15MHz
RG188.
DRF1202.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
|
OCR Scan
|
250ns
250ns
55N50
50N50
50N50
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
|
OCR Scan
|
55N50
50N50
250ns
O-264
|
PDF
|
FM50DY-9
Abstract: kiv4 fm50DY MOSFET Modules
Text: MITSUBISHI MOSFET MODULES F M 5 0 D Y - 9 . - 1 0 MEDIUM POWER SWITCHING USE _ INSULATED TYPE FM50DY-9, -10 • lD . 50A • V DSs . 450/500V
|
OCR Scan
|
FM50DY-9,
450/500V
E80271
FM50DY-9
kiv4
fm50DY
MOSFET Modules
|
PDF
|
MOSFET Modules
Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Text: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS
|
OCR Scan
|
20kHz)
120VAC
240VAC
20kHz
25-35kg
MOSFET Modules
2MI100F-025
"MOSFET Modules"
2MI50S-050
2M150F-050
2MI100F-050
2MI50F-050
M210
2MI100F
|
PDF
|
