Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
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DIODE D12
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
DIODE D12
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mosfet Marking Code b3
Abstract: diode c12 marking c12
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
mosfet Marking Code b3
diode c12
marking c12
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mosfet "marking code 44"
Abstract: TSM2NB60CP
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM2NB60
O-220
ITO-220
O-251
O-252
TSM2NB60
TSM2NB60CH
TSM2NB60CP
TSM2NB60CZ
O-251
mosfet "marking code 44"
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
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Untitled
Abstract: No abstract text available
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM2NB60
O-220
ITO-220
O-251
TSM2NB60
O-252
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ITO-220
Abstract: TSM4N60CH
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
ITO-220
TSM4N60CH
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Untitled
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM6N50
ITO-220
O-252
O-251
TSM6N50
TSM6N50CI
TSM6N50CP
TSM6N50CH
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TSM6N50
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM6N50
ITO-220
O-252
O-251
TSM6N50
TSM6N50CI
TSM6N50CP
TSM6N50CH
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TSM2N60CP
Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
TSM2N60CP
MOSFET 600V 1A
2a 400v mosfet to-251
TSM2N60CH
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Untitled
Abstract: No abstract text available
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
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TSM2NB60
Abstract: mosfet 600V 2A
Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
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TSM2NB60
O-251
O-252
TSM2NB60CH
75pcs
mosfet 600V 2A
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TSM4NB60CP
Abstract: 600v 4A mosfet
Text: Preliminary TSM4NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
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TSM4NB60
O-251
O-252
TSM4NB60CH
75pcs
TSM4NB60CP
600v 4A mosfet
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marking diode f11
Abstract: No abstract text available
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking diode f11
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RESISTOR NETWORK SMD 8 PIN array isolated 2512
Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011
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88EM8011
MV-S104861-00,
88EM8011
MV-S104861-00
RESISTOR NETWORK SMD 8 PIN array isolated 2512
MILMAX MACHINE
marking code EA SMD MOSFET
MOSFET marking smd NU
Zener diode smd marking code nu
prestera package marking
semiconductor smd marking codes
diode SMD MARKING CODE 606
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y3R5-40E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y7R2-60E N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y7R2-60E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y7R2-60E N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y7R2-60E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y14-80E
LFPAK56
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72560
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y25-60E N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y25-60E
LFPAK56
72560
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter
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Q62702-F1132
OT-23
T073H
400Mh
fl235b05
PlS174fl
fl235bGS
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transistor marking M06 GHZ
Abstract: MSB014 dual gate mosfet in vhf amplifier SOT-143R sot143 code marking MS FET MARKING CODE sot143 Marking code MS M8B0J37 dual gate mosfet in uhf amplifier amplifier marking code D
Text: Philips Sem iconductors b b S 3 T 2 M □ 0 7 4 2 ti b 3^*1 SI C3 Dual gate MOS-FETs _ NAPC/PHILIPS Product specification BF904; BF904R SEIHCOND b3E D FO R D E T A ILE D IN FO RM A TIO N SEE TH E LA TE S T ISSUE O F H AND BO O K SC06O R D A TA S H EET QUICK REFERENCE DATA
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0742tÃ
BF904;
BF904R
SC06OR
OT143
OT143R
MSB014
M8B0J37
OT143)
OT143R)
transistor marking M06 GHZ
MSB014
dual gate mosfet in vhf amplifier
SOT-143R
sot143 code marking MS
FET MARKING CODE
sot143 Marking code MS
dual gate mosfet in uhf amplifier
amplifier marking code D
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75bEb
6F998
OT143
bf998 Mop
BF998
marking t54
PHILIPS MOSFET MARKING
PHILIPS MOSFET
mcb349
dual gate fet
N-channel dual-gate MOS-FET for tv
DUAL GATE MOS-FET
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BF991
Abstract: 0R4S fet dual gate sot143 sot143 code marking MS sot143 Marking code MS
Text: b3E » • b b 5 3 ^ 4 □□743DA T3G « S IC 3 NAPC/PHILIPS SEniCOND BF991 _ A_ FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TE S T ISSUE OF H A N D B O O K SC07 OR D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and
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BF991
OT143
OT143.
BF991
0R4S
fet dual gate sot143
sot143 code marking MS
sot143 Marking code MS
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