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    MOTOROLA LINEAR HF Search Results

    MOTOROLA LINEAR HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3EM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3LM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3UF50A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA LINEAR HF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3772 motorola

    Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
    Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N3771* 2N3772 High Power NPN Silicon Power Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 20 and 30 AMPERE


    Original     		2N3771/D* 2N3771/D 2N3772 motorola 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2 N 3772 High Power NPN Silicon Power Transistors ‘ Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.


    OCR Scan     		2N3771/D 2N3771 2N3772 O-204AA PDF

    2n3772

    Abstract: 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
    Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2N 3772 High Pow er NPN Silicon Pow er Transistors 'Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.


    OCR Scan     		2N3771/D 2N3771 2N3772 2n3772 2N3771 motorola 2n3771 LB2T 2N3771 power circuit PDF

    Lp1001

    Abstract: CBO15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1001 LP1001A The RF Line NPN Silicon High-Frequency Transistors The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small-signal plastic transistors offers superior quality


    OCR Scan     		LP1001 LP1001A LP1001A CBO15 PDF

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 PDF

    ZT2907A

    Abstract: PZT2907AT3 ON MARKING P2F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan     		OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 ZT2907A ON MARKING P2F PDF

    mrf3096

    Abstract: transistors equivalent 9012 F3096 IFR 964
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3094 MRF3095 MRF3096 The RF Line M icrowave Linear Power Transistors . . . designed for Class A, common emitter linear power amplifiers. • 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS Specified 20 Volt, 1.6 GHz Characteristics


    OCR Scan     		MRF3094 MRF3095 MRF3096 MRF3096 EB042E90 transistors equivalent 9012 F3096 IFR 964 PDF

    rohm mtbf

    Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ PDF

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 PDF

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100 PDF

    BU108

    Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		MJ15022 MJ15024 MJ15024 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF3104/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics:


    Original     		MRF3104/D MRF3104 MRF3105 MRF3106 MRF3104 MRF3105 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3104 MRF3105 MRF3106 The RF Line M icrowave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain


    OCR Scan     		MRF3104 MRF3104 MRF3105 MRF3106 MRF3105 MRF3104, PDF

    LP1001

    Abstract: LP1001A
    Text: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality


    Original     		LP1001/D LP1001 LP1001A LP1001 226AA LP1001/D* LP1001A PDF

    MARKING P2F

    Abstract: PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
    Text: MOTOROLA Order this document by PZT2907AT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PZT2907AT1/D PZT2907AT1 OT-223 PZT2222AT1 PZT2907AT1/D* MARKING P2F PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F PDF

    mallory 170

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170 PDF

    william orr

    Abstract: 2204B Granberg MOTOROLA linear handbook EB38 papp EB-38 Nippon capacitors
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by EB38/D SEMICONDUCTOR ENGINEERING BULLETIN EB38 MEASURING THE INTERMODULATION DISTORTION OF LINEAR AMPLIFIERS Freescale Semiconductor, Inc. Prepared by: Helge Granberg Circuits Engineer, SSB The measured distortion of a linear amplifier, normally


    Original     		EB38/D william orr 2204B Granberg MOTOROLA linear handbook EB38 papp EB-38 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Motorola Preferred Device Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		MRF862/D MRF862 MRF862/D* PDF

    MPSU04

    Abstract: MPSU03 MPS-U04 MPS-U03
    Text: MOTOROLA SC XSTRS/R F 15E D | b3fc,7SS4 0005401 b | T - 3 1 -0 7 MOTOROLA MPS-U03 MPS-U04 SEMICONDUCTOR TECHNICAL DATA NPN SILICON ANNULAR VOLTAGE AMPLIFIER TRANSISTORS A # y » NPN SILICON AMPLIFIER TRANSISTORS * . . designed horizontal drive applications, high-voltage linear


    OCR Scan     		T-31-07 MPS-U03 MPS-U04 MPS-U04 MPSU04 MPSU03 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRW53502 The RF Line Microwave Linear Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 3.0 GHz frequency range. • Designed for Class A, Common-Emitter Linear Power Amplifiers


    OCR Scan     		MRW53502 MRW53502 PDF

    Motorola Microwave power Transistor

    Abstract: MRF3095 BALLAST MOTOROLA motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF3095/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistor MRF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts


    Original     		MRF3095/D MRF3095 Motorola Microwave power Transistor MRF3095 BALLAST MOTOROLA motorola rf Power Transistor PDF

    transistors equivalent 9012

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRF3094 MRF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8,1.6 Watts Gain — 9.0-12 dB


    OCR Scan     		MRF3094 MRF3095 MRF3094, MRF3095 transistors equivalent 9012 PDF

    ZENER DIODE 47

    Abstract: zener diode 4.7 v c031 diode linear amplifier 470-860 AE50070 2N2219 MOTOROLA 4L126 TRANSISTOR MOTOROLA c031 ZENER DIODE 4.7
    Text: MOTOROLA SC X S T R S / R F MbE D • ^ ^ MOTOROLA ■SEMICONDUCTOR i h HOTb b3b72SH QOTbäaS T h h h h h h h ih h h h i TECHNICAL DATA TPV657 The RF Line UHF Linear Pow er Transisto r 6 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . designed for high power stages in Band V TV transposer am plifiers. Gold metallized


    OCR Scan     		b3b7254 TPV657 MRP-17 0A101JP50 C13-C17 C14-C18 SFR25 AE50070 T-33-27 ZENER DIODE 47 zener diode 4.7 v c031 diode linear amplifier 470-860 2N2219 MOTOROLA 4L126 TRANSISTOR MOTOROLA c031 ZENER DIODE 4.7 PDF

    motorola p1f

    Abstract: SOT-223 P1f MARKING P1F P1F motorola p1f sot-223 PZT2222AT1 PZT2222AT3 PZT2907AT1 SMD310
    Text: MOTOROLA Order this document by PZT2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PZT2222AT1/D PZT2222AT1 OT-223 PZT2907AT1 PZT2222AT1/D* DiodesPZT2222AT1/D motorola p1f SOT-223 P1f MARKING P1F P1F motorola p1f sot-223 PZT2222AT1 PZT2222AT3 PZT2907AT1 SMD310 PDF