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    MPF930 TRANSISTOR Search Results

    MPF930 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MPF930 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPF960

    Abstract: MPF990 MPF930 motorola MPF990
    Text: MOTOROLA Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc


    Original     		PDF MPF930/D MPF930 MPF960 MPF990 226AE) MPF960 MPF990 MPF930 motorola MPF990

    MPF960 equivalent

    Abstract: BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60


    Original     		PDF MPF930 MPF960 MPF990 MPF990 226AE) MSC1621T1 MSC2404 MSD1819A MPF960 equivalent BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out

    AQI-657

    Abstract: C02551 MPF960 IN40P MPF930 MPF990 10m50c
    Text: 1 Advance Information I 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed speed power switching applications plies, CMOS logic, microprocessor for high-current, such as switching high- power or TTL to high current


    Original     		PDF MPF930 MPF960 MPF990 C02551 AQI-657 C02551 MPF960 IN40P MPF930 MPF990 10m50c

    MTP12N10 pin configuration

    Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
    Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in


    Original     		PDF MJW16010A/D MJW16010A* 90nufacture MJW16010A/D* MTP12N10 pin configuration PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210

    MR918

    Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302

    MR918

    Abstract: MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10
    Text: ON Semiconductort NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.


    Original     		PDF MJH16006A r14525 MJH16006A/D MR918 MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10

    MR918

    Abstract: MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930
    Text: MOTOROLA Order this document by MJE16106/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16106  Data Sheet NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • •


    Original     		PDF MJE16106/D MJE16106 MJE16106/D* MR918 MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930

    MTP12N10 pin configuration

    Abstract: MTP12N10 P6302
    Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in


    Original     		PDF MJW16010A/D MJW16010A/D* MTP12N10 pin configuration MTP12N10 P6302

    MTP12N10 pin configuration

    Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
    Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.


    Original     		PDF MJ16110/D MJ16110* MJW16110 MJ16110/D* MTP12N10 pin configuration IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET

    MR918

    Abstract: MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503

    mjw16010a

    Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
    Text: ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series MJW16010A* *ON Semiconductor Preferred Device These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are


    Original     		PDF MJW16010A* r14525 MJW16010A/D mjw16010a PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302

    MJ16110

    Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
    Text: ON Semiconductort MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODEt Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS


    Original     		PDF MJ16110 MJW16110 r14525 MJ16110/D MJ16110 MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870

    MJ11016 equivalent

    Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    1811P3C8

    Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220F MJE13007L QW-R219-004

    transistor mje13007 equivalent

    Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 O-220 MJE13007 O-220F MJE13007L MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007-TA3-T MJE13007-TF3-T MPF930

    motorola mpf990

    Abstract: No abstract text available
    Text: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)


    OCR Scan     		PDF MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF990 motorola mpf990

    F930

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 2 GATE V S \ 1 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rc e Voltage D r a in -G a te Voltage Symbol MPF930 MPF960 MPF990 Unit VdS 35 60 90 Vdc


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF930 MPF960 F930

    F930

    Abstract: T12P MPF960 F990
    Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain


    OCR Scan     		PDF MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF930, MPF960, F930 T12P F990

    TO-226-AE

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF990 O-226AE) GCH37S7 TO-226-AE

    MPF3330

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20


    OCR Scan     		PDF b3b7554 MPF990 MPF930 MPF3330 O-226AA) 2N5460 MPF3330

    MJF16206

    Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
    Text: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors


    OCR Scan     		PDF b3b7254 1-33-OI MJF16206/D MJF16206 MJH16206 AN1040 MJF16206 MJH16206 MJW16206 MTP12N10 pin configuration transistor D 1557 K1194 MPF930 TMJE210 ci mc7812 MC1391P