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    MQ 131 Price and Stock

    Texas Instruments TMP6131ELPGMQ1

    PTC Thermistors Automotive 1% 10-k ohm linear thermisto
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMP6131ELPGMQ1 3,357
    • 1 $0.41
    • 10 $0.331
    • 100 $0.312
    • 1000 $0.263
    • 10000 $0.22
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    Texas Instruments TMP6131QLPGMQ1

    PTC Thermistors Automotive 1% 10-k ohm linear thermisto
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMP6131QLPGMQ1 2,174
    • 1 $0.39
    • 10 $0.314
    • 100 $0.296
    • 1000 $0.249
    • 10000 $0.208
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    Samtec Inc ESQT-131-03-M-Q-368

    Headers & Wire Housings FleXYZ Flexible-Height Socket Strip, 2.00mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ESQT-131-03-M-Q-368
    • 1 $26.39
    • 10 $26.39
    • 100 $20.27
    • 1000 $11.71
    • 10000 $11.71
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    AirBorn Inc MQ-213-015-161-41WS

    D-Sub MIL Spec Connectors Microminiature Series .050
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MQ-213-015-161-41WS
    • 1 -
    • 10 -
    • 100 $134.17
    • 1000 $134.17
    • 10000 $134.17
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    AirBorn Inc MQ-213-015-161-43WD

    D-Sub MIL Spec Connectors Microminiature Series .050
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MQ-213-015-161-43WD
    • 1 -
    • 10 $154.71
    • 100 $148.04
    • 1000 $148.04
    • 10000 $148.04
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    MQ 131 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MQ 6 SENSOR pin diagram

    Abstract: MQ 6 SENSOR MQ 6 gas sensor J5800-002 MQ-FW1-01 MQ-FWAR2-DC12-24V push switch 6 leg plywood MQ-FWAR1-DC12-24V MQ-FWCR1-DC12-24V
    Text: 200-206/MQ-FW 0.6.10 12:46 Page 1 TRIGONOMETRIC AREA REFLECTIVE OPTICAL FIBER PHOTOELECTRIC SENSORS MQ-FW Series Ratchet mechanism with the threeturn adjuster equipped with the indicator • The three-turn adjuster allows fine adjustment of the detectable distance.


    Original     		200-206/MQ-FW MQ 6 SENSOR pin diagram MQ 6 SENSOR MQ 6 gas sensor J5800-002 MQ-FW1-01 MQ-FWAR2-DC12-24V push switch 6 leg plywood MQ-FWAR1-DC12-24V MQ-FWCR1-DC12-24V PDF

    E1751E20

    Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features


    Original     		EDJ2108DEBG-MQ 2133Mbps) EDJ2116DEBG-MQ EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) E1751E20 EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L PDF

    MQ-131

    Abstract: MQ 6 gas sensor AND PIN CONFIGURATION MQ 2 sensor MQ131 MQ 9 sensor MQ 6 SENSOR gas detector MQ 2 gas sensor AND PIN CONFIGURATION MQ 131 MQ 6 gas sensor
    Text: TECHNICAL DATA MQ-131 GAS SENSOR FEATURES Fast response and High sensitivity Stable and long life Simple drive circuit Wide detecting range APPLICATION They are used in air quality control equipments for buildings/offices, are suitable for detecting Of O3 .


    Original     		MQ-131 1100mw CQ-131 50ppb MQ 6 gas sensor AND PIN CONFIGURATION MQ 2 sensor MQ131 MQ 9 sensor MQ 6 SENSOR gas detector MQ 2 gas sensor AND PIN CONFIGURATION MQ 131 MQ 6 gas sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms


    Original     		MW-W20 PDF

    MQ-W70A-DC12-24V

    Abstract: MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W20C-DC12-24VEM MQ-W20A-DC12-24V photoelectric through beam sensor circuit diagram MQ-W3C-DC12-24VEM MQ-W70C-DC12-24V triangulation position sensitive device
    Text: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms


    Original     		MW-W20 MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W20C-DC12-24VEM MQ-W20A-DC12-24V photoelectric through beam sensor circuit diagram MQ-W3C-DC12-24VEM MQ-W70C-DC12-24V triangulation position sensitive device PDF

    position sensitive device

    Abstract: MQ-W20C-DC12-24VEM MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W3CR-DC12-24V MQ-W20 MQ-W20A-DC12-24V MQ-W3A-DC12-24V MQ-W3A-DC12-24VEM
    Text: MQ-W Series TRIPLE BEAM TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms


    Original     		MW-W20 position sensitive device MQ-W20C-DC12-24VEM MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W3CR-DC12-24V MQ-W20 MQ-W20A-DC12-24V MQ-W3A-DC12-24V MQ-W3A-DC12-24VEM PDF

    Laser InP

    Abstract: 1310nm photodiode
    Text: LD-0032 AFONICS Performance Highlights 1310nm DFB Laser Diode - 3.0mW into 9/125µm fibre available - 1310nm InGaAsP/InP DFB Laser Diode -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum (MQW activ tive lay - Laser diode electrically isolated from monitor photodiode


    Original     		LD-0032 1310nm Laser InP 1310nm photodiode PDF

    Afonics

    Abstract: LD-0001
    Text: LD-0001 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum


    Original     		LD-0001 1310nm Afonics LD-0001 PDF

    Untitled

    Abstract: No abstract text available
    Text: LD-0003 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum


    Original     		LD-0003 1310nm -40parties. PDF

    GE4F

    Abstract: Mono tft PC40R MediaQ GE-80 Hitachi DSA002714
    Text: MQ-100/HD64464 LCD/CRT 2D Graphics Subsystem Data Book Version 1.09 August 1998 Preliminary Product Information Copyright Notice Copyright 1998 MediaQ, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by MediaQ, Inc. You may not reproduce, transmit, transcribe, store in a retrieval system, or translate


    Original     		MQ-100/HD64464 SH-7750 SH-7709 MQ-100/HD64464 001-A MQ-100/HD64464-DB1 GE4F Mono tft PC40R MediaQ GE-80 Hitachi DSA002714 PDF

    Untitled

    Abstract: No abstract text available
    Text: G EN ERAL SPECIFICATIONS: MECHANICAL: INSERTION / EXTRACTION FORCE .65Kg - 3Kg. LIFE TEST-5 0 0 0 CYCLES. ELECTRICAL: CONTACT RESISTANCE: DCR ,1A INITIAL TEST: 30 mQ AFTER TEST: 60 mQ INSULATION RESISTANCES 100 MQ @ 500 VDC @ 90 - 95% RH, 40°C WITHSTANDING VOLTAGE: 500V/AC FOR ONE MINUTE.


    OCR Scan     		00V/AC 4051-xx 4052-xx PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array SYMBOL FEATURES • • • • • PHN70308 QUICK REFERENCE DATA 30 mQ isolation transistor 80 mQ spindle transistors TrenchMOS technology Logic level compatible


    OCR Scan     		PHN70308 PHN70308 PDF

    Diode D25 N10 P

    Abstract: Diode D25 N10 R
    Text: p V DSS MegaMOS FET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100V ^D25 DS on 67 A 25 mQ 75 A 20 mQ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T j = 25“ C to 150°C 100 V V«, ^ 100 V Vos v GSM Continuous ±20 V T ransient ±30


    OCR Scan     		67N10 75N10 O-247 O-204 O-204 O-247 Diode D25 N10 P Diode D25 N10 R PDF

    50N20

    Abstract: 42N20 IXTH42N20
    Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200


    OCR Scan     		IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: WB MR SERIES MINI SIZE PUSH BUTTON SW ITCH Feature mini size SPST, momentary function Application hearing aid hand-held device ► SPECIFICATIONS SWITCH SPECIFICATIONS POLE - POSITION Momentary action , SPST CONTACT RATING 3 V DC, 100 mA 150 mQ MAX. 1.5 V DC; 100 mA ,


    OCR Scan     		MP-A11A PDF

    1351d

    Abstract: ITT selenium rectifier selenium rectifier selenium 1229H 1309H Rectifiers MQ-8 selenium rectifiers 1235a
    Text: ITT Semiconductors Selenium Rectifiers ‘ M’ T ype Selenium Rectifiers ‘ MQ’ Type Selenium Rectifiers These rectifiers con sist of a single miniature plate mounted in an alum inium case w ith axial tinned copper leads. These rectifiers are miniature assemblies mounted


    OCR Scan     		1321E 1229H 1230X 1234C K8/10 1311R K8/15 K8/20 1309H K8/35 1351d ITT selenium rectifier selenium rectifier selenium 1229H 1309H Rectifiers MQ-8 selenium rectifiers 1235a PDF

    philips resistor 2322

    Abstract: resistor 2322 series ATIC 91
    Text: A — /9-05T Philips Components Product Specification Power Resistor Chip Size 1218 5% FEATURES Reduced size of final equipment 2322 735 QUICK REFERENCE DATA Resistance Range 1 fl to 1 MQ; E24 Series Lower assem bly costs Resistance Tolerance ±5% Higher com ponent and equipm ent


    OCR Scan     		/9-05T philips resistor 2322 resistor 2322 series ATIC 91 PDF

    S-5412

    Abstract: No abstract text available
    Text: COULD I N C / GOULD A M I MQ E D MDSSTlb 001313 S 1 IA M I •> GOULD 12-Bit, 1MHz SelfCalibrating A/D Converter A M MI.eSemiconductors Preliminary Data Sheet S5412 Features General Description • Monolithic CMOS Sampling ADC On-Chip Track and Hold Amplifier


    OCR Scan     		12-Bit, S5412 12-Bit 750mW CS5412 S5412 S-5412 PDF

    ci 555

    Abstract: ci555 C.I.555
    Text: Advanced Technical Information HiPerFAST IGBT IXGN 200N60B CES ^C25 VCE sat Test Conditions Symbol Maximum Ratings SOT-227B, miniBLOC V CES Tj = 25° C to 150° C 600 V Vw CGR Tj = 25° C to 150eC; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient


    OCR Scan     		200N60B OT-227B, 150eC; ci 555 ci555 C.I.555 PDF

    Untitled

    Abstract: No abstract text available
    Text: P a t c h C o rd s Nominal diameter Withdraw. force 4 mm Rated current 24 A 4 mm | Contact resistance Type Part No. 0.2 mQ LK 415 21.1900 25 cm Highly flexible patch cord with 4 mm (.160 in) dia. MC -Multilam plugs with 4 mm (.160 in) dia. in-line socket.


    OCR Scan     		410-B KT410-L 410-B PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol


    OCR Scan     		67N10 75N10 PDF

    si6045

    Abstract: No abstract text available
    Text: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.


    OCR Scan     		120N60B 120N60B PLUS247TM O-264 B2-167 si6045 PDF

    31053A2

    Abstract: BST45 17331A2 BSA45 30504A2 bsr45
    Text: re c tifie r diodes discs D isc D evices v TO @ T VJ rT @ T vj RthQ-c pth c-hs) T v, @ T vl (kA) (A2sx103) (V) (mQ) (°C/W) fC/W ) (•C) 1205 9 405 0.75 0.25 0.07 0.02 175 11120t+ 6010 6639 17500 37.4 51.5 162 7000 8490 84500 0.6 0.6 0.6 0.872 0.0514 0.0225


    OCR Scan     		DS501ST* sx103 RD33FG* RD43FF* RD65FV* DS502ST* 3830TM 11120t+ DS2101SY* DNB63* 31053A2 BST45 17331A2 BSA45 30504A2 bsr45 PDF

    IXYS DS 145

    Abstract: No abstract text available
    Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS


    OCR Scan     		67N10 75N10 to150 75N10 O-247 T0-204 O-204 IXYS DS 145 PDF