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NXP Semiconductors MRF8P18265HR6 Trans RF MOSFET N-CH 65V 9-Pin Case 375I-03 T/R
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Verical	MRF8P18265HR6		33		1	1 $111.3 10 $111.3 100 $111.3 1000 $111.3 10000 $111.3	Buy Now

MRF8P18265HR6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF8P18265HR6		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 1840MHZ 30V NI1230-8		Original	PDF

MRF8P18265HR6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ATC600F0R1BT250XT Abstract: No abstract text available Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	PDF	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
MRF8P182 Abstract: ATC600F0R1BT250XT atc600f150jt250xt Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	PDF	MRF8P18265H MRF8P18mployees, MRF8P18265HR6 MRF8P18265HSR6 MRF8P18265H MRF8P182 ATC600F0R1BT250XT atc600f150jt250xt
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PDF	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
D1880 Abstract: AN1955 41* RF tuner Text: Freescale Semiconductor Technical Data Document Number: MRF8P18265H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical	Original	PDF	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 D1880 AN1955 41* RF tuner
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF