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    MRFG35003N Search Results

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    NXP Semiconductors MRFG35003N6AT1

    RF MOSFET PHEMT FET 6V PLD-1.5
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    DigiKey MRFG35003N6AT1 Digi-Reel 448 1
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    MRFG35003N6AT1 Cut Tape 448 1
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    Verical MRFG35003N6AT1 5,000 20
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    Newark MRFG35003N6AT1 Reel 1,000
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    Rochester Electronics MRFG35003N6AT1 6,700 1
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    EBV Elektronik MRFG35003N6AT1 28 Weeks 1,000
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    Rochester Electronics LLC MRFG35003NR5

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35003NR5 Bulk 18
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    Rochester Electronics LLC MRFG35003NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35003NT1 Bulk 18
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    NXP Semiconductors MRFG35003NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35003NT1 Reel 1,000
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    Rochester Electronics LLC MRFG35003N6T1

    RF MOSFET PHEMT FET 6V PLD-1.5
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    DigiKey MRFG35003N6T1 Bulk 24
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    MRFG35003N Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFG35003N6AT1 Freescale Semiconductor 3.5GHZ 3W 6V GAAS PLD1.5 Original PDF
    MRFG35003N6T1 Freescale Semiconductor 3.5GHZ 3W6V GAAS PLD1.5N Original PDF
    MRFG35003N6T1 Motorola Gallium Arsenide PHEMT RF Power Field Effect Transistor Original PDF
    MRFG35003NR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANSISTOR RF 3W 12V POWER FET Original PDF
    MRFG35003NT1 Freescale Semiconductor RF Reference Design Library Gallium Arsenide PHEMT Original PDF
    MRFG35003NT1 Freescale Semiconductor 3.5GHZ3W12V GAAS PLD1.5N Original PDF

    MRFG35003N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    MRFG35003N6T1

    Abstract: A113
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6T1 A113

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1

    0841

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6T1 0841

    MRFG35003N6AT1

    Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    ma 8630

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644

    A113

    Abstract: MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1. A113 MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1.

    marking 0836

    Abstract: 0841
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6T1 marking 0836 0841

    marking us capacitor pf l1

    Abstract: marking Z4 CDR33BX104AKWS MRFG35003MT1 MRFG35003NT1 freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 BWA RF Power Field Effect Transistors Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35003NT1 MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 marking us capacitor pf l1 marking Z4 CDR33BX104AKWS freescale semiconductor body marking freescale power RF products FREESCALE MARKING C3 100A100JP150X ATC

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1

    MRFG35003N6AT1

    Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003MT1 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1. Marking Z7 Gate Driver A113 MRFG35003MT1 MRFG35003NT1

    100B101

    Abstract: ma 8630
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003NT1 MRFG35003ANT1. MRFG35003N MRFG35003NT1 MRFG35003N 100B101 ma 8630

    MRFG35003N6AT1

    Abstract: A113 MRFG35003N6T1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1 MRFG35003N6AT1 A113

    MRFG35003N6AT1

    Abstract: A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1 A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803

    MPC5634M

    Abstract: MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128
    Text: Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: ,


    Original     		PDF DSP56311EVM DSP56311VF150 DSP56311VL150 DSP56321VF200 DSP56321VF220 DSP56321VF240 DSP56321VF275 DSP56321VL200 DSP56321VL220 DSP56321VL240 MPC5634M MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    MC908GP32

    Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
    Text: Freescale Semiconductor Product Selector Guide Cross Reference Quarter 4, 2007 SG1000CRQ42007 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the eight Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and existing


    Original     		PDF SG1000CRQ42007 SG187, SG1002Q42007, SG1004Q42007, MC908GP32 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF