Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MSL3 ROHS FBGA Search Results

    MSL3 ROHS FBGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    DS3886AVF-G Rochester Electronics LLC DS3886 - RoHS, BTL 9 Bit Latching Transceiver Visit Rochester Electronics LLC Buy
    DS3886AVFN Rochester Electronics LLC DS3886 - RoHS, BTL 9 Bit Latching Transceiver Visit Rochester Electronics LLC Buy
    AD624BD-G Rochester Electronics LLC AD624 - Precission Instrumentation Amplifier, RoHS Visit Rochester Electronics LLC Buy

    MSL3 ROHS FBGA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MR4A16B

    Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
    Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B 20-years AEC-Q100 MR4A16B 216-bit MR4A16B, EST352 MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100 PDF

    FM23MLD16-60-BG

    Abstract: FM23MLD16 fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz


    Original     		FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16-60-BG fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed PDF

    FM23MLD16

    Abstract: 3.3v 1Mx8 static ram high speed
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz


    Original     		FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 3.3v 1Mx8 static ram high speed PDF

    MR256DL08B

    Abstract: No abstract text available
    Text: MR256DL08B Dual Supply 32K x 8 MRAM FEATURES • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance


    Original     		MR256DL08B 20-years MR256DL08B 144-bit 32ies EST02630 Rev2121913 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 PDF

    FM20L08

    Abstract: FM22LD16 FM22LD16-55-BG
    Text: Preliminary FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM22LD16 256Kx16 512Kx8 40MHz 256Kx16 FM22LD16 48-ball FM22LD16, C8556953BG1, FM20L08 FM22LD16-55-BG PDF

    8Mbit FRAM

    Abstract: No abstract text available
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz


    Original     		FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 8Mbit FRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 FM21LD16 FM21LD16, C8556953BG1, FM21LD16-60-BG PDF

    Untitled

    Abstract: No abstract text available
    Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM22LD16 256Kx16 512Kx8 40MHz 256Kx16 C8556953BG1, FM22LD16-55-BG C8556953BG1 FM22LD16 PDF

    MSL3 RoHS FBGA

    Abstract: fm23mld16 FM21LD16-60-BG FM22LD16
    Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 40MHz 128Kx16 FM21LD16 48-ball MSL3 RoHS FBGA fm23mld16 FM21LD16-60-BG FM22LD16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM22LD16 256Kx16 512Kx8 40MHz 256Kx16 FM22LD16 FM22LD16-55-BG C8556953BG1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 FM21LD16, C8556953BG1, FM21LD16-60-BG C8556953BG1 FM21LD16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 48-ball FM21LD16, C8556953BG1, FM21LD16-60-BG C8556953BG1 PDF

    MR256DL08B

    Abstract: No abstract text available
    Text: MR256DL08B Dual Supply 32K x 8 MRAM FEATURES • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance


    Original     		MR256DL08B 20-years MR256DL08B 144-bit 1-877-347-MRAM EST02630 Rev1111713a PDF

    MR0DL08B

    Abstract: No abstract text available
    Text: MR0DL08B FEATURES Dual Supply 128K x 8 MRAM • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance


    Original     		MR0DL08B 20-years MR0DL08B 576-bit EST02629 Rev1111913 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM • Organized as 64Kx16  Configurable as 128Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM28V102 64Kx16 128Kx8 33MHz 64Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: MR256A08B FEATURES • • • • • • • • • 32K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures


    Original     		MR256A08B 48-ball 44-pin 32-pin MR256A08B 144-bit 1-877-347-MRAM EST00355 101113a PDF

    BGA Package 0.35mm pitch

    Abstract: 48BGA MR4A16B
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B AEC-Q100 MR4A16B 216-bit EST00352 BGA Package 0.35mm pitch 48BGA PDF

    MR4A16BCYS35

    Abstract: No abstract text available
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B MR4A16B 216-bit MR4A16BCYS35 PDF

    Untitled

    Abstract: No abstract text available
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B AEC-Q100 MR4A16B 216-bit EST00352 PDF

    MSL3 RoHS FBGA

    Abstract: fm23mld16 failure rate
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 MSL3 RoHS FBGA fm23mld16 failure rate PDF

    Untitled

    Abstract: No abstract text available
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B AEC-Q100 MR4A16B 216-bit EST00352 PDF

    aec-q100 package

    Abstract: MR4A16BCYS35R
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		MR4A16B AEC-Q100 MR4A16B 216-bit 1-877-347-MRAM EST00352 aec-q100 package MR4A16BCYS35R PDF