MT28F004VG Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY MT28F004 512K x 8 FLASH MEMORY \|U \|C = R O N FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: 16KB boot block protected Two 8KB param eter blocks Four m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access tim es: 60ns, 80ns, 100ns	OCR Scan	MT28F004 100ns 40-Pin 56-PIN	PDF
Micron Quantum Devices Abstract: MARKING flash 28F Text: ADVANCE MT28F004 512K X 8 FLASH MEMORY FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low power: lOOuA standby; 60mA active, MAX • 5V±10% read; 12V±5% w rite/erase	OCR Scan	MT28F004 100ns V/12V, 40-Pin 100ns 512Kx Micron Quantum Devices MARKING flash 28F	PDF
Untitled Abstract: No abstract text available Text: ADVANCE MT28F004 512K x 8 FLASH MEMORY MICRON I DEVICES. 'NC 512K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low pow er lOOfiA standby; 60mA active, MAX	OCR Scan	MT28F004 V/12V, 100ns 100ns 00000H)	PDF
MT28F004VG Abstract: No abstract text available Text: PRELIMINARY MICRON MT28F004 512K x 8 FLASH MEMORY 512K x 8 I 5V/12V, BOOT BLOCK BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES • S even e rase blocks: 16KB b o o t block protected T w o 8KB p a ra m e te r blocks F o u r m a in m e m o ry blocks • 5V ±10% Vcc; 12V ±5% Vpp	OCR Scan	MT28F004 100ns V/12V, 100ns 00000H) MT28F004VG-8 MT28F004VG	PDF